BFX85 v cbo collector ? base voltage v ceo collector ? emitter voltage i c collector current continuous p tot total power dissipation t amb < 25c t case < 25c t case < 25c <100c t stg storage temperature t j operating junction temperature 100v 60v 1a 800 mw 5w 2.86w ?65 to 150c 175c mechanical data dimensions in mm (inches) npn silicon epitaxial switching transistor absolute maximum ratings (t case = 25c unless otherwise stated) applications ? general purpose switching and amplification industrial applications hermetic metal package hi-rel screening options available 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) to39 (to-205ad) pin 1 ? emitter underside view pin 2 ? base pad 3 ? collector semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5808 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v ceo = 60v i c = 1a
electrical characteristics (t j = 25 c unless otherwise stated) BFX85 v eb = 6v i c = 0 v eb = 5v i c = 0 v eb = 5v i c = 0 t j = 100 c v cb =80v i e = 0 v cb =100v i e = 0 t j = 100 c v cb =100v i e = 0 v cb =100v i e = 0 t j = 100 c v ce = 10v i c = 10ma v ce = 10v i c = 150ma v ce = 10v i c = 500ma v ce = 10v i c = 1a i c = 10ma i b = 1ma i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 1a i b = 100ma i c = 10ma i b = 1ma i c = 150ma i b = 15ma i c = 500ma i b = 50ma i c = 1a i b = 100ma v cb = 10v i e = i c =0 f=1mh z v ce = 10v i c = 50ma i con = 150ma; i bon = 15ma i boff = -15ma emitter cut ? off current collector cut ? off current dc current gain collector ? emitter saturation voltage base ? emitter saturation voltage collector capactitance transition frequency (f = 1mhz) turn-on time delay time rise time turn-off time storage time fall time 10 500 250 0.1 2.5 250 0.1 2.5 10 500 0.5 30 50 90 70 142 30 90 15 50 150 200 150 350 0.35 1 0.66 1.6 0.69 1.2 0.92 1.3 1.15 1.5 1.4 2 712 50 185 55 15 40 360 300 60 na a na a na a --- mv v v pf mhz ns i ebo i cbo h fe v ce(sat) v be(sat) c tc f t t on t d t r t off t s t f thermal characteristics r ja thermal resistance junction ? ambient 200 c/w r jc thermal resistance junction ? case 35 c/w parameter test conditions min. typ. max. unit semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk document number 5808 issue 1 semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders.
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