be found on our website at UMC5N features ? epitaxial planar die construction ? surface mount package suited for automated assembly ? simplifies circuit design and reduces board space ? lead free/rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: sot-353 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? marking information: see page 4 ? ordering information: see page 4 ? weight: 0.006 grams (approximate) sot-353 321 4 5 top view r1 r2 q 1 (3) (2) (1) (4) (5) q 2 r2 r1 q 1 r = 47k 1 r = 47k 2 q 2 r = 10k 2 r = 4.7k 1 schematic and pin configuration maximum ratings, total device @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 3) p d 150 mw thermal resistance, junction to ambient air (note 3) r ja 833 c/w operating and storage temperature range t j , t stg -55 to +150 c maximum ratings, pre-bi ased npn transistor, q 1 @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage v in -10 to +40 v output current i o 30 ma collector current i c(max) 100 ma maximum ratings, pre-bi ased pnp transistor, q 2 @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage v in -20 to +7 v output current i o -100 ma collector current i c(max) -100 ma notes: 1. no purposefully added lead. 2. diodes inc.'s "green" policy can 3. device mounted on fr-4 pcb; pad layout as shown on diode s inc. suggested pad layout document ap02001, which can be found o n our website at www.twtysemi.com www.twtysemi.com product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics, pr e-biased npn transistor, q 1 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v i(off) ? ? 0.5 v v cc = 5v, i o = 100 a input voltage v i(on) 3 ? ? v v o = 0.3v, i o = 2ma output voltage v o(on) ? 0.1 0.3 v i o / i i = 10ma/0.5 ma input current i i ? ? 0.18 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dc current gain g i 68 ? ? ? v o = 5v, i o = 5ma gain-bandwidth product f t ? 250 ? mhz v ce = 10v, i e = -5ma, f = 100mhz* input resistance r 1 32.9 47 61.1 k ? resistance ratio r 2 /r 1 0.8 1 1.2 ? ? *characteristics of transistor ? for reference only. electrical characteristics, pr e-biased pnp transistor, q 2 @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition v i(off) ? ? -0.3 v v cc = -5v, i o = -100 a input voltage v i(on) -2.5 ? ? v v o = -0.3v, i o = -20ma output voltage v o(on) ? -0.1 -0.3 v i o / i i = -10ma/-0.5 ma input current i i ? ? -1.8 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = -50v, v i = 0v dc current gain g i 30 ? ? ? v o = -5v, i o = -10ma gain-bandwidth product f t ? 250 ? mhz v ce = -10v, i e = 5ma, f = 100mhz* input resistance r 1 3.29 4.7 6.11 k ? resistance ratio r 2 /r 1 1.7 2.1 2.6 ? ? *characteristics of transistor ? for reference only. UMC5N product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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