ij ts\g ^thjc ftthja values 10 40 10 7.9 59 14 20 40 -55... + 150 -55... + 150 <3.1 75 e 55/150/56 unit a mj v w c k/w quality semi-conductors
buz 72 l electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit static characteristics drain- source breakdown voltage vgs = 0 v, /d = 0.25 ma, 7] = 25 c gate threshold voltage ^gs^ds, /d = 1 rna zero gate voltage drain current l/bs=100v, vgs = ov, 7] = 25c vbs = 100 v, vgs = 0 v, 7] = 125 c gate-source leakage current vgs = 20 v, vbs = 0 v drain-source on-resistance vgs = 5 v, /d = 5 a v(br)dss ^gs(th) /dss 'gss ^ds(on) 100 1.2 - - - - - 1.6 0.1 10 10 0.12 - 2 1 100 100 0.2 v ua na q
buz 72 l electrical characteristics, at 7] = 25c, unless otherwise specified parameter symbol values min. typ. max. unit dynamic characteristics transconductance vds> 2 * /d * /?ds(on)max, /d = 5 a input capacitance vgs = 0 v, vds = 25 v, f= 1 mhz output capacitance vgs = 0 v, vbs = 25 v, f= 1 mhz sf v\ st f !u>ot 3 sldbqbdjlbodf vht!>mw!\/et!>!36!w!fl>!2!ni { uvso.polef rtazlyn f \/ee!>!41 !w! vht!>!6!w!/e!>!4!b rht!>!61!x sjtf !ynf vee!>!41!w!vht!>!6!w!/e!>!4!b /?ht!>!61!x uvso.pg|ef ttozlyn f vee!>!41!w!\/ht!>!6!w!/e!>!4!b rht>!61!x gbrrignf vee!>!41 !w!\/ht!>'6!w!/e!>!4!b rht^^hx fi^fs qss ^?oss cstt ^e)po* t* k)pgr |
