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1 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com datasheet subject to change without notice. primary applications product description key features measured performance 14 - 17 ghz packaged doubler with amplifier bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v typical, vdbl = -0.8 v fixed the triquint tgc4406-sm packaged mmic combines a frequency doubler operating at input frequencies of 14 - 17 ghz, with a 3-stage output amplifier. the tgc4406-sm achieves typically 25 dbc input frequency isolation and 20 dbm output power with 5 dbm input power. this performance makes this doubler ideally suited for point to point radios and ka-band satellite ground terminal applications. the tgc4406-sm provides the frequency doubling function in an compact 4 mm x 4 mm package footprint. each device is 100% dc and rf tested on?wafer to ensure performance compliance. evaluation boards are available upon request. lead-free and rohs compliant. ? rf output frequency range: 28 - 34 ghz ? input frequency range: 14 - 17 ghz ? output power: 20 dbm nominal ? conversion gain: 15 db nominal ? input frequency isolation: 25 dbc ? bias: vd = 5 v, id = 150 ma, vg = -0.5 v typical, vdbl = -0.8 v fixed, ? package dimensions: 4 x 4 x 0.9 mm ? point-to-point radio ? ka band satcom
2 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions table i absolute maximum ratings 1/ symbol parameter value notes vd-vg drain to gate voltage 12 v vd drain voltage 8 v 2/ vdbl doubler voltage range -2 to 0 v vg gate voltage range -2 to 0 v id positive current 280 ma 2/ ig gate current range -1 to 23 ma idbl doubler current range -0.6 to 16.8 ma pin input continuous wave power 18.2 dbm 2/ 1/ these ratings represent the maximum operable va lues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause per manent damage to the device and / or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ combinations of supply voltage, supply current , input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter 1/ value vd drain voltage 5 v id quiescent drain current 150 ma id_drive drain current with rf input = 5 dbm 180 ma vg typical gate voltage -0.5 v vdbl fixed doubler voltage -0.8 v 1/ see assembly diagram for bias instructions.
3 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table bias: vd = 5 v, id = 150 ma, vg = -0.5 v typical, vdbl = -0.8 v fixed symbo l parameter test conditions min nom units fin input frequency range 14 - 17 ghz fout doubler output frequency range 28 ? 34 ghz cg conversion gain fin = 14 - 17 ghz fout = 28 - 34 ghz 15 db cg conversion gain fin = 14.75 - 15 ghz fout = 29.5 - 30 ghz 13 15 db irl input return loss fin = 14 - 17 ghz 6 db orl output return loss fout = 28 ? 34 ghz 8 db pout output power (pin=+5 dbm) fin = 14 - 17 ghz fout = 28 ? 34 ghz 20 dbm 1xfin iso isolation ? fout at 2xfin relative to fout at 1xfin fin = 14 - 17 ghz fout = 14 - 17 ghz 25 dbc 3xfin iso isolation - fout at 2xfin relative to fout at 3xfin fin = 14 - 17 ghz fout = 42 - 51 ghz 40 dbc
4 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv power dissipation and thermal properties median lifetime (tm) vs. channel temperature parameter test conditions value maximum power dissipation tbaseplate = 85 c pd = 1.51 w tchannel = 200 c thermal resistance, jc vd = 5 v id = 150 ma pd = 0.75 w tbaseplate = 85 c jc = 76 (c/w) tchannel = 142 c tm = 2.1e+6 hrs thermal resistance, jc under rf drive vd = 5 v id = 180 ma pout = 20 dbm pd = 0.80 w tbaseplate = 85 c jc = 69 (c/w) tchannel = 140 c tm = 2.4e+6 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c
5 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v typical, vdbl = -0.8 v fixed
6 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured data bias conditions: vd = 5 v, id = 150 ma, vg = -0.5 v typical, vdbl = -0.8 v fixed
7 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout pin description 1, 2, 4, 7, 8, 9, 11, 12, 13, 15, 16 n/c 3 rf input 5 vdbl 6v g 10 rf out 14 vd 17 gnd pin #1 identification 1 2 3 4 56 7 8 12 11 10 9 13 14 15 16 17 pin #1 dot top view bottom view top view
8 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com electrical schematic bias procedures bias-up procedure ? vdbl set to -0.8 v ? vg set to -1.5 v ? vd set to +5 v ? adjust vg more positive until id is 150 ma. this will be vg = ~ -0.5 v ? apply signal to input, id will increase bias-down procedure ? turn off signal ? reduce vg to -1.5 v. ensure id ~ 0 ma ? turn vd to 0 v ? turn vdbl to 0 v ? turn vg to 0 v vd doubler 2x buffer tgc4406-sm rf in rf out vg vdbl 100 pf 100 pf 1 uf 100 pf 1 uf 15 ? 1 uf 15 ? x 2
9 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing units: millimeters
10 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com recommended assembly diagram part qty description c1 3 1 uf capacitor (0402) c2 3 100 pf capacitor (0402) r1 2 15 ohm resistor (0402)
11 tgc4406-sm april 2012 ? rev b april 2012 ? rev b triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly notes ordering information part eccn package style tgc4406-sm 3a001b.2.d qfn 4x4 surface mount recommended surface mount package assembly ? proper esd precautions must be followed while handling packages. ? clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. ? triquint recommends using a conductive solder pas te for attachment. follow solder paste and reflow oven vendors? recommendations when dev eloping a solder reflow profile. typical solder reflow profiles are listed in the table below. ? hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent me chanical and electrical performance. ? clean the assembly with alcohol. reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec typical solder reflow profiles environmental ratings moisture sensitivity rating 1

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