to-92l plastic-encapsulate transistors KSA928A transistor(pnp) feature y audio p ower a mplifier y complement to application maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -30 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -2 a p c collector power dissipation 0.75 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t ype max u nit collector-base breakdown voltage v(br) cbo i c = -100a, i e =0 -30 v collector-emitter breakdown voltage v(br) ceo i c = -10 ma, i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -30v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a dc current gain h fe v ce =-2v, i c = -500ma 100 320 collector-emitter saturation voltage v ce(sat) i c = -1.5 a, i b = -0.03a -2 v base-emitter voltage v be i c = -500 ma, v ce = -2v -1 v transition frequency f t v ce = -2 v, i c = -500ma 120 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 48 pf classification of h fe rank o y range 100-200 160-320 to-92l 1.emitter 2.collector 3.base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,jan,2012
|
