2005. 6. 3 1/3 semiconductor technical data KTC4074V epitaxial planar npn transistor revision no : 0 general purpose application. switching application. features h excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). h high h fe : h fe =120~400. h low collector-to-emitter saturation voltage. h complementary to kta2013v. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v collector current i c 200 ma base current i b 30 ma collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =20v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain h fe (note) v ce =5v, i c =2ma 120 - 400 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma - 0.1 0.25 v transition frequency f t v ce =10v, i c =1ma 80 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.0 3.5 pf note : h fe classification y(4):120 q 240, gr(6):200 q 400
2005. 6. 3 2/3 KTC4074V revision no : 0
2005. 6. 3 3/3 KTC4074V revision no : 0
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