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data sheet 1 of 14 rev. 04.1, 2015-06-15 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive deviceobserve handling precautions! PTVA120251EA thermally-enhanced high power rf ldmos fet 25 w, 50 v, 500 C 1400 mhz description the PTVA120251EA ldmos fet is designed for use in power ampli - fier applications in the 500 mhz to 1400 mhz frequency band. features include high gain and a thermally-enhanced package with bolt-down flange. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PTVA120251EA package h-36265-2 features ? unmatched input and output ? high gain and efficiency ? integrated esd protection ? esd hbm class 2, per ansi/esda/jedec js-001 ? low thermal resistance ? excellent ruggedness ? pb-free and rohs-compliant ? capable of withstanding a 10:1 load mismatch (all phase angles) at p out = 25 w, under cw conditions rf characteristics typical rf performance (not subject to production test, verifed by design/characterization in infneon test fxture) v dd = 50 v, i dq = 0.02 a, input signal (t r = 5 ns, t f = 6.5 ns), 300 s pulse width, 12% duty cycle, class ab test p 1db p 3db mode of operation ? irl gain eff p out gain eff p out p droop(pulse) t r t f (mhz) (db) (db) (%) (w) (db) (%) (w) db @ 30 w (ns) (ns) pulsed rf 1200 12 16.4 52 31 14.4 56 41 0.27 6 8 pulsed rf 1300 11 16.0 56 32 14.0 59 40 0.20 6 8 pulsed rf 1400 14 15.8 53 34 13.8 56 38 0.24 6 8 10 20 30 40 50 60 70 30 35 40 45 50 55 60 18 22 26 30 34 drain efficiency (%) output power (dbm) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, t case = 25c 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz 1200 mhz 1300 mhz 1400 mhz efficiency output power a120251ea-v2-gr1a```
PTVA120251EA data sheet 2 of 14 rev. 04.1, 2015-06-15 rf characteristics pulsed rf performance (tested in infineon test fixture) v dd = 50 v, i dq = 0.02 a, p out = 25 w, ? 1 = 1200 mhz, ? 2 = 1300 mhz, ? 3 = 1400 m hz, 300 s pulse width, 10% duty cycle characteristic symbol min typ max unit gain g ps 17 18 db drain efficiency h d 47 54 % return loss irl C13 C9 db dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 105 v drain leakage current v ds = 50 v, v gs = 0 v i dss 1.0 a v ds = 105 v, v gs = 0 v i dss 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) 1.4 w operating gate voltage v ds = 50 v, i dq = 150 ma v gs 3 3.35 4 v gate leakage current v gs = 10 v, v ds = 0 v i gss 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 105 v gate-source voltage v gs C6 to +12 v junction temperature t j 200 c storage temperature range t stg C65 to +150 c thermal resistance (t case = 70c, v dd = 50 v, 25 w cw) r q jc 3.7 c/w ordering information type and version order code package and description shipping PTVA120251EA v2 PTVA120251EAv2xwsa1 h-36265-2, ceramic open-cavity, single-ended, bolt-down tray PTVA120251EA v2 r250 PTVA120251EAv2r250xtma1 h-36265-2, ceramic open-cavity, single-ended, bolt-down tape & reel, 250 pcs
data sheet 3 of 14 rev. 04.1, 2015-06-15 PTVA120251EA typical rf performance (data taken in production test fixture) 13 14 15 16 17 18 19 18 22 26 30 34 gain (db) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, t case = 25c 300 s pulse width, 12% duty cycle 1200 mhz 1300 mhz 1400 mhz a120251ea-v2-gr1b 40 45 50 55 60 65 70 16 17 18 19 1150 1250 1350 1450 drain efficiency (%) gain (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, p out = 25 w 300 s pulse width, 12% duty cycle efficiency gain a120251ea-v2-gr1c -22 -20 -18 -16 -14 -12 -10 0.08 0.12 0.16 0.20 0.24 0.28 0.32 1150 1250 1350 1450 input return loss (db) power droop (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma at p1db 300 s pulse width, 12% duty cycle input return loss power droop a120251ea-v2-gr1d 0 20 40 60 80 11 13 15 17 19 28 32 36 40 44 48 efficiency (%) gain (db) output power (dbm) pulsed cw performance at selected v dd i dq = 20 ma, ? = 1300 mhz 300 s, 12% duty cycle 30 v 35 v 40 v 45 v 50 v a120251ea-v2-gr6 gain efficiency
PTVA120251EA data sheet 4 of 14 rev. 04.1, 2015-06-15 typical rf performance (cont.) 13 14 15 16 17 18 19 18 20 22 24 26 28 30 32 34 gain (db) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz a120251ea-v2-gr2b gain -18 -16 -14 -12 -10 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0.26 1150 1200 1250 1300 1350 1400 1450 irl (db) power droop (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma at p1db 2 ms pulse width, 10% duty cycle a120251ea-v2-gr2d input return loss power droop 40 50 60 70 16 17 18 19 1150 1200 1250 1300 1350 1400 1450 drain efficiency (%) gain (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, p out = 25 w 2 ms pulse width, 10% duty cycle a120251ea-v2-gr2c efficiency gain 10 20 30 40 50 60 70 30 35 40 45 50 55 60 18 22 26 30 34 drain efficiency (%) p out (dbm) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma 2 ms pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz 1200 mhz 1300 mhz 1400 mhz efficiency output power a120251ea-v2-gr2a
data sheet 5 of 14 rev. 04.1, 2015-06-15 PTVA120251EA typical rf performance (cont.) 10 20 30 40 50 60 70 30 35 40 45 50 55 60 18 22 26 30 34 drain efficiency (%) output power (dbm) power in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma 128 s pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz 1200 mhz 1300 mhz 1400 mhz efficiency output power a120251ea-gr3a 13 14 15 16 17 18 19 18 20 22 24 26 28 30 32 34 gain (db) power in (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma 128 s pulse width, 10% duty cycle 1200 mhz 1300 mhz 1400 mhz a120251ea-gr3b gain 40 50 60 70 16 17 18 19 1150 1250 1350 1450 drain efficiency (%) gain (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, p out = 25 w 128 s pulse width, 10% duty cycle a120251ea-gr3c efficiency gain -18 -16 -14 -12 -10 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 1150 1250 1350 1450 irl (db) power droop (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma at p1db 128 s pulse width, 10% duty cycle a120251ea-gr3d input return loss power droop
PTVA120251EA data sheet 6 of 14 rev. 04.1, 2015-06-15 typical rf performance (cont.) 12 13 14 15 16 17 18 19 18 20 22 24 26 28 30 32 34 gain (db) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, t case = 25c 16 ms pulse width, 50% duty cycle 1200 mhz 1300 mhz 1400 mhz gain a120251ea-v2-gr4b 40 50 60 70 16 17 18 19 1150 1250 1350 1450 drain efficiency (%) gain (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma, p out = 25 w 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4c efficiency gain -16 -14 -12 -10 -8 -6 -4 0.08 0.12 0.16 0.20 0.24 0.28 0.32 1150 1250 1350 1450 irl (db) power droop (db) frequency (mhz) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma at p1db 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4d input return loss power droop 10 20 30 40 50 60 70 30 35 40 45 50 55 60 18 20 22 24 26 28 30 32 drain efficiency (%) output power (dbm) input power (dbm) power sweep, pulsed rf v dd = 50 v, i dq = 20 ma 16 ms pulse width, 50% duty cycle a120251ea-v2-gr4a output power efficiency 1200 mhz 1300 mhz 1400 mhz
data sheet 7 of 14 rev. 04.1, 2015-06-15 PTVA120251EA typical rf performance (tested with ltn/PTVA120251EA e4 test fixture, 960 mhz C 1215 mhz) see next page for further performance characterization 5 15 25 35 45 55 65 75 12 13 14 15 16 17 18 19 32 34 36 38 40 42 44 46 efficiency (%) gain (db) output power (dbm) cw performance v dd = 50 v, i dq = 20 ma a120251ea-v2-gr5 1200 mhz 1300 mhz 1400 mhz gain efficiency -25 -20 -15 -10 -5 0 5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 900 1100 1300 1500 1700 input return loss (db) power gain (db) frequency (mhz) small signal cw performance v dd = 50 v, i dq = 80 ma gain irl a120251ea-v2-gr7
PTVA120251EA data sheet 8 of 14 rev. 04.1, 2015-06-15 10 12 14 16 18 20 0 5 10 15 20 25 30 35 40 gain (db) output power (w) power sweep, pulsed rf i dq = 20 ma, v dd = 50 v, t case = 25 c, 128 s pulse width, 10% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz gain a120251e1a_g4 - 1 5 15 25 35 45 55 65 0 5 10 15 20 25 30 35 40 drain efficiency (%) output power (w) power sweep, pulsed rf i dq = 20 ma, v dd = 50 v, t case = 25 c, 128 s pulse width, 10% duty cycle 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz efficiency a120251e1a_g4 - 2 10 12 14 16 18 20 0 5 10 15 20 25 30 35 gain (db) output power (w) cw performance v dd = 50 v, i dq = 20 ma 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz gain a120251e1a_gcw - 3 0 10 20 30 40 50 60 0 5 10 15 20 25 30 35 drain efficiency (%) output power (w) cw performance v dd = 50 v, i dq = 20 ma 960 mhz 1030 mhz 1090 mhz 1150 mhz 1215 mhz efficiency a120251e1a_gcw - 4 typical rf performance (cont.) (tested with ltn/PTVA120251EA e4 test fixture, 960 mhz C 1215 mhz)
data sheet 9 of 14 rev. 04.1, 2015-06-15 PTVA120251EA 6 7 8 9 10 11 450 550 650 750 850 par @ 0.01% ccdf (db) frequency (mhz ) dvb-t performace par @ 0.01% ccdf vs frequency at various average p out v dd = 40 v, i dq = 140 ma p out = 36 dbm p out = 34 dbm a120251ea_40v_g3 p out = 32 dbm p out = 30 dbm 0 5 10 15 20 25 30 450 550 650 750 850 drain efficiency (%) frequency (mhz) dvb - t performace efficiency vs frequency at various average p out v dd = 40 v, i dq = 140 ma p out = 30 dbm p out = 32 dbm p out = 34 dbm p out = 36 dbm a120251ea_40v_g2 test conditions: dvb-t 8 mhz unclipped input signal, output par measured at 0.01% point of ccdf curve, acpr measured over 200 khz bw at 4.1 mhz offset from carrier center frequency. - 48 - 46 - 44 - 42 - 40 - 38 - 36 - 34 - 32 - 30 450 550 650 750 850 acpr (db) frequency (mhz) dvb - t performace acpr vs frequency at various average p out v dd = 40 v, i dq = 140 ma p out = 36 dbm p out = 34 dbm p out = 32 dbm p out = 30 dbm a120251ea_40v_g1 typical rf performance (cont.) (tested with ltn/PTVA120251EA e3 test fixture, 470 mhz C 860 mhz)
PTVA120251EA data sheet 10 of 14 rev. 04.1, 2015-06-15 broadband circuit impedance see next page for reference circuit information z source z load g s d freq [mhz] z source w z load w r jx r jx 1200 4.31 C0.22 6.46 7.63 1300 5.06 C0.79 6.29 7.27 1400 4.94 C1.96 6.14 8.72
data sheet 11 of 14 rev. 04.1, 2015-06-15 PTVA120251EA assembly diagram for reference circuit ltn/PTVA120251EA v2, 1200 mhz to 1400 mhz (not to scale) dut test fixture part no. pcb frequency (mhz) PTVA120251EA ltn/PTVA120251EA v2 * rogers 6006, 0.635 mm [0.025] thick, 2 oz. copper, r = 6.15 1200 C 1400 PTVA120251EA ltn/PTVA120251EA e2 ? rogers 3010, 0.635 mm [0.025] thick, 2 oz. copper, r = 10.2 1200 C 1400 PTVA120251EA ltn/PTVA120251EA e3 ? rogers 4350b, 0.762mm [.030"] thick, 2 oz. copper, r = 3.48 470 C 860 PTVA120251EA ltn/PTVA120251EA e4 ? rogers 3010, 0.635 mm [0.025] thick, 2 oz. copper, r = 10.2 960 C 1215 * see pages 11 C 12 for assembly information. find gerber files for this reference circuit on the infineon web site at www.infineon.com/rfpower ? gerber files for this reference circuit are available on request. reference circuits rf_in p t v a 1 2 0 2 5 1 e a _ c d _ 9 - 3 0 - 1 4 r803 c802 r802 r805 r804 c801 r801 c803 ptva120251_in_01a ro6006, 025 (62) ro6006, 025 (63) ptva120251_out_02 r101 r103 c101 c103 c102 r102 c104 rf_out c202 c204 c201 c205 v dd r201 s1 s2 s2 c203 PTVA120251EA c802
PTVA120251EA data sheet 12 of 14 rev. 04.1, 2015-06-15 reference circuit (cont.) components information component description manufacturer p/n input c101, c102 capacitor, 56 pf atc atc100b560jw500xb c103 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c104 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c801, c802, c803 capacitor, 1000 pf kemet c1812c560khgactu r101 resistor, 5.6 ohms panasonic electronic components erj-8rqj5r6v r102 resistor, 0 ohms panasonic electronic components erj-8rqj5r6v r103, r801 resistor, 10 ohms panasonic C ecg erj-3geyj100v r802, r805 resistor, 2k ohms panasonic electronic components erj-8geyj202v r803 chip resistor, 1.3k ohms panasonic electronic components erj-3geyj132v r804 chip resistor, 1.2k ohms panasonic electronic components erj-3geyj122v s1 potentiometer 2k ohms bourns inc. 3224w-1-202e s2 voltage regulator fairchild semiconductor lm7805 s3 transistor fairchild semiconductor bcp56 output c201 capacitor, 10 f tdk corporation c5750x5r1h106k230ka c202 capacitor, 1 f tdk corporation c4532x7r2a105m230ka c203 capacitor, 100 f cornell dubilier electronics sk101m100st c204, c205 capacitor, 56 pf atc atc100b560jw500xb c206 capacitor, 6800 f panasonic electronic components eco-s2ap682ea r101 resistor, 5.6 ohms panasonic electronic components erj-8geyj5r6v
data sheet 13 of 14 rev. 04.1, 2015-06-15 PTVA120251EA package outline specifications package h-36265-2 find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 2x 7 . 11 [. 280 ] 45 x 2.03 [. 080 ] 3. 05 [. 120 ] c l c l flange 9. 78 [. 385 ] 2 x r1. 52 [r . 060 ] 4x r0. 63 [r . 025 ] max 6. d s g 15 . 49 . 51 [. 610 . 020 ] 4x r1. 52 [r . 060 ] lid 10. 16. 25 [. 400 . 010 ] 2. 66. 51 [. 105 . 020 ] all four corners 15. 23 [. 600 ] sph 1. 57 [. 062 ] 20. 31 [. 800 ] 1. 02 [. 040 ] 10 . 16 . 25 [. 400 . 010 ] 6 . 3. 61. 38 [. 142 . 015 ] h - 3 6 2 6 5 - 2 _ p o _ 0 9 - 0 8 - 2 0 1 1 diagram notesunless otherwise specifed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [0.005] unless specifed otherwise. 4. pins: d C drain; g C gate; s C source 5. lead thickness: 0.10 + 0.051/C0.025 mm [0.004 + 0.002/C0.001 inch]. 6. exposed metal plane on top and bottom of ceramic insulator. 7. gold plating thickness: 1.14 0.38 micron [45 15 microinch].
edition 2014-06-15 published by infineon technologies ag 85579 neubiberg, germany ? 2012 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infneon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international data sheet 14 of 14 rev. 04.1, 2015-06-15 PTVA120251EA v2 revision history revision date data sheet type page subjects (major changes since last revision) 01 2012-06-04 preliminary all first release of data sheet for pre-production product 02 2012-10-29 preliminary 6 add dvb-t performance graphs 03 2013-03-25 production all 1 C 2 3 C 8 9 C 11 data sheet refects released product specifcations and performance update tables with current data add further graphs add load pull performance and reference circuit information 04 2014-10-03 production 11 C 12 1, 3 C 7 new circuit design. characterization in new circuit. 04.1 2015-06-15 production 2 updated max of irl in pulsed rf performance table 01 2012-06-04 preliminary all first release of data sheet for pre-production product 02 2012-10-09 preliminary 6 add dvb-t performance graphs 03 2013-03-25 production all 1 C 2 3 C 8 9 C 11 data sheet refects released product specifcations and performance update tables with current data add further graphs add load pull performance and reference circuit information 04 2014-10-03 production 11 C 12 1, 3 C 7 new circuit design. characterization in new circuit.

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