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php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor rev. 01 20 august 2002 product data 1. description n-channel, enhancement mode ?eld-effect power transistor. product availability: php7nq60e in to-220ab (sot78) PHX7NQ60E in isolated to-220ab. 2. features n very fast switching n available in plastic and plastic full-pack package n low thermal resistance. 3. applications n dc to dc converters n switched mode power supplies n electronic lighting ballasts n t.v. and computer monitor power supplies. 4. pinning information table 1: pinning - to-220ab and isolated to-220ab, simpli?ed outline and symbol pin description simpli?ed outline symbol 1 gate (g) to-220ab (sot78) isolated to-220ab 2 drain (d) 3 source (s) mb (to-220ab only) mounting base, connected to drain (d) mbk106 12 mb 3 mbk110 1 mb 23 s d g mbb076
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 2 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. 5. quick reference data 6. limiting values [1] for isolated to-220ab limited only by maximum temperature allowed table 2: quick reference data symbol parameter conditions typ max unit v ds drain-source voltage (dc) 25 c t j 150 c - 600 v i d drain current (dc) t c =25 c; v gs =10v [1] -7 a t j junction temperature - 150 c r dson drain-source on-state resistance v gs =10v; i d = 3.5 a t j =25 c 0.94 1.2 w t j = 150 c 2.4 2.9 w table 3: limiting values symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 150 c - 600 v v dgr drain-gate voltage (dc) 25 c t j 150 c; r gs =20k w - 600 v v gs gate-source voltage (dc) - 30 v i d drain current (dc) t c =25 c; v gs =10v; [1] -7 a t c = 100 c; v gs =10v; figure 3 and 4 [1] - 4.5 a i dm peak drain current t c =25 c; pulsed; t p 10 m s; figure 5 and 6 -28a p tot total power dissipation (to-220ab) t c =25 c; figure 1 - 147 w p tot total power dissipation (isolated to-220ab) t c =25 c; figure 2 -37w t stg storage temperature - 55 +150 c t j junction temperature - 55 +150 c v isol r.m.s isolation voltage from all three terminals to external heatsink f = 50 to 60 hz; sinusoidal waveform; r.h. 65%; clean and dust-free; isolated to-220ab only - 2500 v source-drain diode i s source (diode forward) current (dc) t c =25 c-7a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy unclamped inductive load, i as = 6.5 a; t p = 2.3 ms; t j prior to avalanche = 25 c; v dd 50 v; r gs =50 w ; v gs =10v - 316 mj e ds(al)r repetitive drain-source avalanche energy i ar = 7 a; t p = 2.5 m s; t j prior to avalanche = 25 c; r gs =50 w ; v gs =10v -13mj i ds(al)s non-repetitive drain-source avalanche current -7 a
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 3 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. fig 1. to-220ab normalized total power dissipation as a function of mounting base temperature. fig 2. isolated to-220ab normalized total power dissipation as a function of heatsink temperature. fig 3. to-220ab normalized continuous drain current as a function of mounting base temperature. fig 4. isolated to-220ab normalized continuous drain current as a function of heatsink temperature. 03ak23 0 40 80 120 0 50 100 150 p der (%) t mb ( c) 03ak39 0 40 80 120 0 50 100 150 p der (%) t hs ( c) 03ak26 0 40 80 120 0 50 100 150 t mb ( c) i der (%) 03ak40 0 40 80 120 0 50 100 150 ths ( c) i der (%) t hs ( c)
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 4 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. t mb =25 c; i dm is single pulse. fig 5. to-220ab safe operating area; continuous and peak drain currents as a function of drain-source voltage. t hs =25 c; i dm is single pulse. fig 6. isolated to-220ab safe operating area; continuous and peak drain currents as a function of drain-source voltage. 03ak28 10 -1 1 10 10 2 10 10 2 10 3 v ds (v) i d (a) dc 100 ms 10 ms 1 ms t p = 10 m s 100 m s limit r dson = v ds / i d 03ak29 10 -2 10 -1 10 10 1 10 2 10 10 2 10 3 v ds (v) i d (a) dc 100 ms 10 ms 1 ms 100 s t p = 10 s limit r dson = v ds / i d
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 5 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. 7. thermal characteristics 7.1 transient thermal impedance table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base to-220ab figure 7 - - 0.85 k/w r th(j-hs) thermal resistance from junction to heatsink isolated to-220ab figure 8 - - 3.4 k/w r th(j-a) thermal resistance from junction to ambient isolated to-220ab package vertical in still air - 55 - k/w to-220ab package vertical in still air - 60 - k/w fig 7. to-220ab transient thermal impedance from junction to mounting base as a function of pulse duration. 03ak24 10 -3 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-mb) (k/w) single pulse d = 0.5 0.2 0.1 0.05 0.02 t p t p t p t t d =
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 6 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. fig 8. isolated to-220ab transient thermal impedance from junction to heatsink as a function of pulse duration. 03ak25 10 -3 10 -2 10 -1 1 10 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 t p (s) z th(j-hs) (k/w) single pulse d = 0.5 0.2 0.1 0.05 0.02 t p t p t p t t d =
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 7 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. 8. characteristics table 5: characteristics t j =25 c unless otherwise speci?ed symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d = 250 m a; v gs = 0 v 600 - - v t j = - 55 c 534 - - v v gs(th) gate-source threshold voltage i d = 250 m a; v ds =v gs ; figure 13 t j =25 c 2 2.9 4 v t j = 150 c 1--v t j = - 55 c - 3.2 4.5 v i dss drain-source leakage current v gs =0v; v ds = 600 v t j =25 c - 0.3 100 m a t j = 125 c; v ds = 480v - 150 500 m a i gss gate-source leakage current v ds =0v; v gs = 10 v - 2 200 na r dson drain-source on-state resistance v gs = 10 v; i d = 3.5 a; figure 11 and 12 t j =25 c - 0.94 1.2 w t j = 150 c - 2.4 2.9 w c isol capacitance from pin 2 to external heatsink f = 1 mhz; isolated to-220ab only - 10 - pf dynamic characteristics q g(tot) total gate charge i d =7a;v dd = 480 v; v gs =10v; figure 17 -27-nc q gs gate-source charge - 3.6 - nc q gd gate-drain (miller) charge - 10 - nc c iss input capacitance v gs =0v; v ds = 25 v; f = 1 mhz; figure 15 - 1130 - pf c oss output capacitance - 105 - pf c rss reverse transfer capacitance - 24 - pf t d(on) turn-on delay time v dd = 300 v; r d =39 w ; r g = 9.1 w -17-ns t r rise time -20-ns t d(off) turn-off delay time - 40 - ns t f fall time -20-ns source-drain diode v sd source-drain (diode forward) voltage i s = 7 a; v gs =0v; figure 16 - 0.9 1.2 v t rr reverse recovery time i s = 7 a; di s /dt = - 100 a/ m s; v gs = 0 v - 530 - ns q r recovered charge - 6.7 - m c
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 8 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. t j =25 ct j =25 c and 150 c; v ds > i d xr dson fig 9. output characteristics: drain current as a function of drain-source voltage; typical values. fig 10. transfer characteristics: drain current as a function of gate-source voltage; typical values. t j =25 c fig 11. drain-source on-state resistance as a function of drain current; typical values. fig 12. normalized drain-source on-state resistance factor as a function of junction temperature. 03ak27 0 4 8 12 0 5 10 15 20 v ds (v) i d (a) 4.5 v 6 v v gs = 4 v 6.5 v 7 v 7.5 v 10 v 12 v 5.5 v 5 v 03ak31 0 5 10 15 20 02468 v gs (v) i d (a) v ds > i d x r dson t j = 25 c 150 c 03ak30 0 1 2 3 4 5 04812 i d (a) r dson ( w ) 7 v v gs = 12 v 10 v 4 v 7.5 v 6.5 v 6 v 5.5 v 4.5 v 5 v 03ak34 0 1 2 3 -60 10 80 150 t j ( c) a a r dson r dson 25 c () ---------------------------- =
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 9 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. i d = 1 ma; v ds =v gs t j =25 c; v ds =5v fig 13. gate-source threshold voltage as a function of junction temperature. fig 14. sub-threshold drain current as a function of gate-source voltage. v gs =0v;f=1mhz fig 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. 03ak16 0 1 2 3 4 5 -60 10 80 150 t j ( c) max min typ v gs(th) (v) 03ak33 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 v gs (v) i d (a) typ max min 03ak35 1 10 10 2 10 3 10 4 10 -1 1 10 10 2 10 3 v ds (v) c iss c oss c rss c (pf)
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 10 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. t j =25 c and 150 c; v gs =0v i d = 7 a; v dd = 100 v; 200 v; 480 v fig 16. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. fig 17. gate-source voltage as a function of gate charge; typical values. 03ak22 0 5 10 15 20 0 0.3 0.6 0.9 1.2 v sd (v) i s (a) 150 c v gs = 0 v t j = 25 c 03ak36 0 5 10 15 0 102030 q g (nc) v gs (v) t j = 25 c v dd = 480 v v dd = 100 v v dd = 200 v
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 11 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. 9. package outline fig 18. to-220ab (sot78) references outline version european projection issue date iec jedec eiaj sot78 sc-46 3-lead to-220ab d d 1 q p l 123 l 1 (1) b 1 e e b 0 5 10 mm scale plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead to-220ab sot78 dimensions (mm are the original dimensions) a e a 1 c note 1. terminals in this zone are not tinned. q l 2 unit a 1 b 1 d 1 e p mm 2.54 qq a b d c l 2 max. 3.0 3.8 3.6 15.0 13.5 3.30 2.79 3.0 2.7 2.6 2.2 0.7 0.4 15.8 15.2 0.9 0.7 1.3 1.0 4.5 4.1 1.39 1.27 6.4 5.9 10.3 9.7 l 1 (1) e l 00-09-07 01-02-16 mounting base
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 12 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. fig 19. isolated to-220ab references outline version european projection issue date iec jedec jeita sot186a 3-lead to-220f 0 5 10 mm scale plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead to-220 'full pack' sot186a a a 1 q c k j notes 1. terminal dimensions within this zone are uncontrolled. terminals in this zone are not tinned. 2. both recesses are ? 2.5 0.8 max. depth d d 1 l l 2 l 1 b 1 b 2 e 1 e b w m 1 23 q e p t unit d b 1 d 1 e q q p l c l 2 (1) max. e 1 a 5.08 3 mm 4.6 4.0 a 1 2.9 2.5 b 0.9 0.7 1.1 0.9 b 2 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 e 10.3 9.7 2.54 14.4 13.5 t (2) 2.5 0.4 l 1 3.30 2.79 j 2.7 1.7 k 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 dimensions (mm are the original dimensions) 02-03-12 02-04-09 mounting base
philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor product data rev. 01 20 august 2002 13 of 15 9397 750 10153 ? koninklijke philips electronics n.v. 2002. all rights reserved. 10. revision history table 6: revision history rev date cpcn description 01 20020820 product speci?cation; initial version.
9397 750 10153 philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor ? koninklijke philips electronics n.v. 2002. all rights reserved. product data rev. 01 20 august 2002 14 of 15 9397 750 10153 philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor ? koninklijke philips electronics n.v. 2002. all rights reserved. product data rev. 01 20 august 2002 14 of 15 contact information for additional information, please visit http://www.semiconductors.philips.com . for sales of?ce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com . fax: +31 40 27 24825 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is ava ilable on the internet at url http://www.semiconductors.philips.com. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. data sheet status [1] product status [2] de?nition objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be publish ed at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change noti?cation (cpcn) procedure snw-sq-650a.
? koninklijke philips electronics n.v. 2002. printed in the netherlands all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 20 august 2002 document order number: 9397 750 10153 contents philips semiconductors php7nq60e; PHX7NQ60E n-channel enhancement mode ?eld-effect transistor 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 5 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 6 limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2 7 thermal characteristics . . . . . . . . . . . . . . . . . . . 5 7.1 transient thermal impedance . . . . . . . . . . . . . . 5 8 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 12 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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