dmn 2400ufd q document number: ds 37853 rev. 3 - 2 1 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information n - channel enhancement mode mosfet product summary b v dss r ds(on) i d t a = + 25c 2 0v 0. 6 ? @ v gs = 4.5v 0.9 a 0.8 ? @ v gs = 2.5 v 0.7a 1.0 ? @ v gs = 1.8 v 0.5a 1.6 ? @ v gs = 1.5 v 0.3a features and benefits ? low on - resistance ? very l ow ga te threshold voltage , 1.0v m ax . ? low input capacitance ? fast switching speed ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? ppa p capable (note 4) description and applications this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? powe r m anagement f unctions ? battery operated systems and solid - state relays ? load s witch mechanical data ? case: u - dfn1212 - 3 ? case material: molded plastic ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? termina ls: finish C nipdau over copper l eadframe ; solderable per mil - std - 202, method 208 ? terminal connections: see diagram ? weight: 0.0 05 grams ( a pproximate) ordering in formation (note 5 ) part number case packaging dmn 2400ufdq - 7 u - dfn1 212 - 3 3 , 000/tape & reel dmn 2400u fd q - 13 u - dfn1212 - 3 10 , 000 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1 000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.di odes.com/quality/product_ compliance _definitions /. 5 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information date code key year 201 5 201 6 201 7 20 18 20 19 20 20 20 21 20 22 20 23 20 24 20 25 code c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view bottom view equivalent circuit esd protected k24 = product type marking code ym = date code marking y = year (ex: c = 201 5 ) m = month (ex: 9 = september) pin - out top view d s g u - dfn1212 - 3 u - dfn1212 - 3 y m k24 pin 1 d s g g ate protection diode e4
dmn 2400ufd q document number: ds 37853 rev. 3 - 2 2 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information maximum ratings ( @t a = + 25c unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 20 v gate - sour ce voltage v gss 12 v continuous drain current (note 7 ) v gs = 4.5 v steady state t a = + 25c t a = + 70c i d 0.9 0. 7 a continuous drain current (note 7 ) v gs = 2.5 v steady state t a = + 25c t a = + 70c i d 0. 7 0. 5 a pulsed drain curren t ( 10 dm 3.0 a maximum body diode forward current (note 7 ) i s 0.8 a thermal characteristics ( @t a = +25c unless otherwise specified.) characteristic symbol value units total power dissipation (note 6 ) p d 0.4 w thermal resistanc e, junction to ambient (note 6 ) s teady s tate r ? 283 c/w total power dissipation (note 7 ) p d 0.8 w thermal resistance, junction to ambient (note 7 ) s teady st ate r ? 147 c/w thermal resistance, junction to case (note 7 ) r ? 112 c/w operating and s torage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = +25c unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250a j = + 25c i dss - - 8 0 100 n a v ds = 4.5 v, v gs = 0v v ds = 20 v, v gs = 0v gate - source leakage i gss - - 1.0 a v gs = 4. 5 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 0. 4 5 - 1.0 v v ds = v gs , i d = 250 a ds (on) - 0.3 5 0. 6 ? gs = 4.5v, i d = 2 00ma 0. 45 0. 8 v gs = 2.5v, i d = 2 00ma 0.6 1.0 v gs = 1.8 v, i d = 1 00ma - 0.7 1.6 v gs = 1 .5v, i d = 5 0ma forward transfer admittance |y fs | - 1 .4 - s v ds = 3 v, i d = 2 00ma diode forward voltage v sd 0.7 1.2 v v gs = 0v, i s = 5 0 0ma , dynamic characteristics (note 9 ) input capacitance c iss - 3 7 .0 - pf v ds = 16 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 5.7 - pf reverse transfe r capacitance c rss - 4.2 - pf gate resistance r g - 68 - ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g - 0.5 - nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs - 0.07 - nc gate - drain charge q gd - 0.1 - nc turn - on delay time t d(on) - 4.06 - ns v dd = 10 v, v gs = 4.5 v, r l = 47 , r g = 10 d = 200ma turn - on rise time t r - 7.28 - ns turn - off delay time t d(off) - 13.74 - ns turn - off fall time t f - 10.54 - ns notes: 6 . device mounted on fr - 4 pc board, with minimum recommended pad layout, single sided. 7 . device mo unted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1 - inch square copper plate . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing.
dmn 2400ufd q document number: ds 37853 rev. 3 - 2 3 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information 0 0.5 1.0 1.5 2.0 0 1 2 3 4 5 fig. 1 typical output characteristics v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 1.2v gs v = 1.8v gs 0 0.5 1.0 1.5 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristics v , gate source voltage (v) gs v = 5v ds t = -55c a t = 25c a t = 125c a t = 150c a t = 85c a 0 0.4 0.8 1.2 1.6 2.0 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 4.5v gs v = 2.5v gs v = 1.5v gs v = 5.0v gs 0 0.2 0.4 0.6 0.8 0 0.4 0.8 1.2 1.6 i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = 2.5.v i = 500ma gs d v = 4.5v i = 1.0a gs d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d
dmn 2400ufd q document number: ds 37853 rev. 3 - 2 4 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d 0 0.4 0.8 1.2 1.6 0 0.4 0.6 0.8 1.0 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current 0.2 i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 10 20 30 40 50 60 0 5 10 15 20 fig. 9 typical capacitance v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) f = 1mhz c iss c oss c rss 0.1 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 fig. 10 typical drain-source leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a t = -55c a 0 1 2 3 4 5 0 0.1 0.2 0.3 0.4 0.5 0.6 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = 10v i = 250ma ds d 0.01 0.1 1 10 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d v , drain -source voltage (v) ds figure 12 typical output characteristics r ds(on) limited dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dmn 2400ufd q document number: ds 37853 rev. 3 - 2 5 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap0200 1 at http://ww w.diodes.com/datasheets/ap0200 1 .pdf for the latest version. u - dfn1212 - 3 ( type c ) dim min max typ a 0.47 ? a1 0 0.05 0.02 a3 - - 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 d 1.15 1.25 1.20 d2 0.75 0.95 0.85 e - - 0.80 e 1.15 1.25 1.20 e2 0.40 0.60 0.50 l 0.25 0.35 0.30 l1 0.65 0.75 0.70 all dimensions in mm u - dfn1212 - 3 ( type c ) dimensions value c 0.800 g 0.200 x 0.320 x1 0.520 x2 1.050 y 0.450 y1 0.250 y2 0.850 all dimensions in mm 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration times (sec) figure 13 transient thermal resistance d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d = 0.9 r (t) = r(t) * r ? ? ja ja r = 283c/w ? ja duty cycle, d = t1/ t2 a a3 seating plane a1 d e e l1 b b1 e2 d2 l x2 y2 y c x y1 x1 g
dmn 2400ufd q document number: ds 37853 rev. 3 - 2 6 of 6 www.diodes.com november 2015 ? diodes incorporated dmn 2400ufd q new product adva nced information important notice diodes incorporat ed makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any l iability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or p roducts described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorpo rated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales cha nnel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united states, international or foreign trademarks. t his document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support de vices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instruction s for use provided in the labeling can be reaso nably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to aff ect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regu latory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provid ed by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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