ssf2637e 20v p-channel mosfet www.goodark.com page 1 of 4 rev.1.0 package marking and ordering information device marking device device package reel size tape width quantity 2637e ssf2637e sop-8 absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v i d -5.4 a drain current-continuous@ current-pulsed (note 1) i dm -30 a maximum power dissipation p d 1.9 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 40 /w general features v ds = -20v,i d =-5.4a r ds(on) < 52m @ v gs =-2.5v r ds(on) < 43m @ v gs =-4.5v esd rating 3000v hbm high power and current handing capability lead free product surface mount package a pplications battery protection load switch power management marking and p in assignment s op - 8 t op v iew description the ssf2637e uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as -0.5v. schematic diagram ddd g s s s 4 321 d 567 8 4414 2637e
ssf2637e 20v p-channel mosfet www.goodark.com page 2 of 4 rev.1.0 electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250a -20 v zero gate voltage drain current i dss v ds =-16v,v gs =0v -1 a gate-body leakage current i gss v gs =8v,v ds =0v 10 ua on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250a -0.3 -0.55 -1 v v gs =-4.5v, i d =-4a 37 43 m v gs =-2.5v, i d =-4a 45 52 m drain-source on-state resistance r ds(on) v gs =-1.8v, i d =-2a 56 73 m forward transconductance g fs v ds =-5v,i d =-4a 4 8 s dynamic characteristics (note4) input capacitance c lss 1450 pf output capacitance c oss 200 pf reverse transfer capacitance c rss v ds =-10v,v gs =0v, f=1.0mhz 160 pf switching characteristics (note 4) turn-on delay time t d(on) 9.5 ns turn-on rise time t r 17 ns turn-off delay time t d(off) 90 ns turn-off fall time t f v dd =-10v,i d =-1a v gs =-4.5v,r gen =3 30 ns total gate charge q g 17 nc gate-source charge q gs 1.3 nc gate-drain charge q gd v ds =-10v,i d =-4a, v gs =-4.5v 4.5 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-1a -0.76 -1 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on 1in 2 fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
ssf2637e 20v p-channel mosfet www.goodark.com page 3 of 4 rev.1.0 typical electrical and thermal characteristics square wave pluse duration(sec) figure 3: normalized maximum transient thermal impedance vgs rgen vin g vdd rl vout s d figure 1: switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms z thja normalized transient thermal resistance
ssf2637e 20v p-channel mosfet www.goodark.com page 4 of 4 rev.1.0 sop-8 package information notes 1. dimensions are inclusive of plating 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 6 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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