vishay siliconix SI4447DY document number: 73662 s09-0322-rev. b, 02-mar-09 www.vishay.com 1 p-channel 40-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ?100 % r g tested ? 100 % uis tested applications ? ccfl inverter notes: a. surface mounted on 1" x 1" fr4 board. product summary v ds (v) r ds(on) ( ) i d (a) q g (typ.) - 40 0.054 at v gs = - 10 v - 4.5 9 0.072 at v gs = - 4.5 v - 3.9 s g d p- c hannel m os fet s s d d d s g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: SI4447DY-t1-e3 (lead (pb)-free) SI4447DY-t1-ge3 (lead (pb)-free and halogen-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds - 40 v gate-source voltage v gs 16 continuous drain current (t j = 150 c) a t a = 25 c i d - 4.5 - 3.3 a t a = 70 c - 3.6 - 2.7 pulsed drain current i dm - 30 continuous source current (diode conduction) a i s - 1.7 - 0.9 avalanche current l = 0.1 mh i as 16 single pulse avalanche energy e as 13 mj maximum power dissipation a t a = 25 c p d 21.1 w t a = 70 c 1.3 0.7 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 50 62.5 c/w steady state 85 110 maximum junction-to-foot (drain) steady state r thjf 30 40
www.vishay.com 2 document number: 73662 s09-0322-rev. b, 02-mar-09 vishay siliconix SI4447DY notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.8 - 2.2 v v ds temperature coefficient v ds /t j i d = - 250 a - 40 mv/c v gs(th) temperature coefficient v gs(th) /t j 3.4 gate-source leakage i gss v ds = 0 v, v gs = 16 v 100 na zero gate voltage drain current i dss v ds = - 40 v, v gs = 0 v - 1 a v ds = - 40 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 10 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 4.5 a 0.045 0.054 v gs = - 15 v, i d = - 4.5 a 0.059 0.072 forward transconductance a g fs v ds = - 15 v, i d = - 4.5 a 13 s diode forward voltage a v sd i s = - 1.7 a, v gs = 0 v - 0.79 - 1.2 v dynamic b input capacitance c iss v ds = - 20 v, v gs = 0 v, f = 1 mhz 805 pf output capacitance c oss 120 reverse transfer capacitance c rss 85 total gate charge q g v ds = - 20 v, v gs = - 4.5 v, i d = - 4.5 a 914 nc gate-source charge q gs 2 gate-drain charge q gd 3.6 gate resistance r g f = 1 mhz 11.5 18 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1 a, v gen = - 10 v, r g = 6 813 ns rise time t r 12 18 turn-off delaytime t d(off) 74 110 fall time t f 38 60 source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/s 27 45 body diode reverse recovery charge q rr 17 26 nc output characteristics 0 4 8 12 16 20 012345 v gs = 10 v thru 4 v v ds - drain-to-source voltage (v) i d - drain current (a) 3 v transfer characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t c = - 55 c 125 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 25 c
document number: 73662 s09-0322-rev. b, 02-mar-09 www.vishay.com 3 vishay siliconix SI4447DY typical characteristics 25 c, unless otherwise noted on-resistance vs. drain current gate charge source-drain diode forward voltage 0.00 0.02 0.04 0.06 0.0 8 0.10 04 8 12 16 20 i d - drain c u rrent (a) v gs = 4.5 v v gs = 10 v r ds(on) - on-resistance ( ) 0 1 2 3 4 5 6 0246 8 10 12 i d = 4.5 a - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 10 v v ds = 20 v 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c 20 10 1 v sd - so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s t j = 25 c capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 124 24 8 372 496 620 744 8 6 8 992 1116 1240 0 5 10 15 20 25 30 35 40 v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf) c rss c oss c iss 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 4.5 a t j - j u nction temperat u re (c) r ds(on) - on-resistance ( n ormalized) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0246810 i d = 4.5 a r ds(on) - on-resistance ( ) t a = 25 c t a = 125 c v gs - gate-to-source voltage (v)
www.vishay.com 4 document number: 73662 s09-0322-rev. b, 02-mar-09 vishay siliconix SI4447DY typical characteristics 25 c, unless otherwise noted threshold voltage - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v ariance ( v ) v gs(th) t j - temperat u re (c) single pulse power, junction-to-ambient 0 30 50 10 20 po w er ( w ) time (s) 0 0 6 110 40 0.1 0.001 100 0.01 safe operating area 100 1 0.1 1 10 100 0.01 10 t a = 25 c single p u lse - drain c u rrent (a) i d 0.1 i dm limited i d(on) limited b v dss limited v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified 100 ms 1 s 10 s dc 10 ms 1 ms limited b yr ds(on) * normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm square wave pulse duration (s)
vishay siliconix SI4447DY document number: 73662 s09-0322-rev. b, 02-mar-09 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73662 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 0 1 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance
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