dmg1013uw document number: ds31861 rev. 3 - 2 1 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw p-channel enhancem ent mode mosfet features ? low on-resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakage ? esd protected ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot-323 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram below ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? weight: 0.006 grams (approximate) ordering information (note 4) part number case packaging dmg1013uw-7 sot-323 3000 / tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html marking information date code key year 2008 2009 2010 2011 2012 2013 2014 2015 code v w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d esd protected e q uivalent circuit to p view top view source gate protection diode gate drai n gs d pa1 = product type marking code ym = date code marking for sat (shanghai assembly/ test site) y ? m = date code marking for cat (chengdu assembly/ test site) y or y ? = year (ex: a = 2013) m = month (ex: 9 = september) pa1 ym chengdu a/t site shanghai a/t site e3
dmg1013uw document number: ds31861 rev. 3 - 2 2 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -20 v gate-source voltage v gss 6 v continuous drain current (note 5) steady state t a = +25c t a = +85c i d -0.82 -0.54 a pulsed drain current (note 6) i dm -6 a thermal characteristics characteristic symbol value unit power dissipation (note 5) p d 0.31 w thermal resistance, junction to ambient @t a = +25c (note 5) r ja 398 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 5. device mounted on fr-4 pcb, with minimum recommended pad layout. 6. repetitive rating, pulse width limited by junction temperature. electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss -20 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = +25c i dss - - -100 na v ds = -20v, v gs = 0v gate-source leakage i gss - - 2.0 a v gs = 4.5v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) -0.5 - -1.0 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 0.5 0.7 1.0 0.75 1.05 1.5 ? v gs = -4.5v, i d = -430ma v gs = -2.5v, i d = -300ma v gs = -1.8v, i d = -150ma forward transfer admittance |y fs | - 0.9 - s v ds = -10v, i d = -250ma diode forward voltage v sd -0.8 -1.2 v v gs = 0v, i s = -150ma dynamic characteristics (note 8) input capacitance c iss - 59.76 - pf v ds = -16v, v gs = 0v, f = 1.0mhz output capacitance c oss - 12.07 - pf reverse transfer capacitance c rss - 6.36 - pf total gate charge q g - 622.4 - pc v gs = -4.5v, v ds = -10v, i d = -250ma gate-source charge q g s - 100.3 - pc gate-drain charge q g d - 132.2 - pc turn-on delay time t d ( on ) - 5.1 - ns v dd = -10v, v gs = -4.5v, r l = 47 ? , r g = 10 ? , i d = -200ma turn-on rise time t r - 8.1 - ns turn-off delay time t d ( off ) - 28.4 - ns turn-off fall time t f - 20.7 - ns notes: 7. short duration pulse test used to minimize self-heating effect. 8. guaranteed by design. not subject to production testing.
dmg1013uw document number: ds31861 rev. 3 - 2 3 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw 0 0.3 0.6 0.9 1.2 1.5 01 2 345 fig. 1 typical output characteristic -v , drain-source voltage (v) ds -i , d r ain c u r r en t (a) d v = -1.2v gs v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -8.0v gs 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic -v , gate-source voltage (v) gs 0 2 4 6 8 10 -i , d r ai n c u r r e n t (a) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.3 0.6 0.9 1.2 1.5 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.3 0.6 0.9 1.2 1.5 r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) ? -i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r ain-s o u r c e on-resistance (normalized) dson v = -4.5v i = -1.0a gs d v = -2.5v i = -500ma gs d 0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson ? v = -4.5v i = -1.0a gs d v = -2.5v i = -500ma gs d
dmg1013uw document number: ds31861 rev. 3 - 2 4 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.4 0.8 1.2 1.6 -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) i = -1ma d i = -250a d 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current -v , source-drain voltage (v) sd 0 2 4 6 8 10 -i , s o u r c e c u r r en t (a) s t = 25c a 1 10 100 0 5 10 15 20 fig. 9 typical total capacitance -v , drain-source voltage (v) ds c , c a p a c i t an c e (p f ) c iss c rss c oss f = 1mhz 04 8121620 fig. 10 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds 1 10 100 1,000 -i , leaka g e c u r r e n t (na) dss t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r(t), t r ansien t t h e r mal r esis t an c e t - t = p * r (t) duty cycle, d = t /t ja ja 12 ? r (t) = r(t) * ? ja r r = 504c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg1013uw document number: ds31861 rev. 3 - 2 5 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot-323 dim min max typ a 0.25 0.40 0.30 b 1.15 1.35 1.30 c 2.00 2.20 2.10 d - - 0.65 g 1.20 1.40 1.30 h 1.80 2.20 2.15 j 0.0 0.10 0.05 k 0.90 1.00 0.95 l 0.25 0.40 0.30 m 0.10 0.18 0.11 ?? 0 8 - all dimensions in mm dimensions value (in mm) z 2.8 x 0.7 y 0.9 c 1.9 e 1.0 a m j l d b c h k g x e y c z
dmg1013uw document number: ds31861 rev. 3 - 2 6 of 6 www.diodes.com september 2013 ? diodes incorporated dmg1013uw important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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