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www.irf.com 1 09/14/07 IRFI4227PBF notes through are on page 8 description hexfet ? power mosfet

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features advanced process technology key parameters optimized for pdp sustain, energy recovery and pass switch applications low e pulse rating to reduce power dissipation in pdp sustain, energy recovery and pass switch applications low q g for fast response high repetitive peak current capability for reliable operation short fall & rise times for fast switching 150c operating junction temperature for improved ruggedness repetitive avalanche capability for robustness and reliability s d g gds gate drain source d s d g to-220ab full-pak v ds max 200 v v ds (avalanche) typ. 240 v r ds(on) typ. @ 10v 21 m i rp max @ t c = 100c 47 a t j max 150 c key parameters absolute maximum ratings parameter units v gs gate-to-source voltage v i d @ t c = 25c continuous drain current, v gs @ 10v a i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current i rp @ t c = 100c repetitive peak current p d @t c = 25c power dissipation w p d @t c = 100c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range soldering temperature for 10 seconds mounting torque, 6-32 or m3 screw n thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.73 r ja junction-to-ambient ??? 65 max. 17 100 26 30 47 300 -40 to + 150 10lb in (1.1n m) 46 18 0.37

2 www.irf.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 200 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 240 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 21 25 m ? v gs(th) gate threshold voltage 3.0 ??? 5.0 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? 11 ??? mv/c i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 1.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 g fs forward transconductance 47 ??? ??? s q g total gate charge ??? 73 110 nc q gd gate-to-drain charge ??? 21 ??? t d(on) turn-on delay time ??? 17 ??? t r rise time ??? 19 ??? ns t d(off) turn-off delay time ??? 11 ??? t f fall time ??? 29 ??? t st shoot through blocking time 100 ??? ??? ns e pulse energy per pulse j c iss input capacitance ??? 4600 ??? c oss output capacitance ??? 460 ??? pf c rss reverse transfer capacitance ??? 91 ??? c oss eff. effective output capacitance ??? 360 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package avalanche characteristics parameter units e as single pulse avalanche energy mj e ar repetitive avalanche energy mj v ds(avalanche) repetitive avalanche voltage v i as avalanche current a diode characteristics parameter min. typ. max. units i s @ t c = 25c continuous source current ??? ??? 26 (body diode) a i sm pulsed source current ??? ??? 100 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 93 140 ns q rr reverse recovery charge ??? 350 520 nc v dd = 100v, v gs = 10v i d = 17a r g = 2.5 ? see fig. 22 ??? 570 ??? ??? 910 ??? 4.6 16 ??? ??? 240 ??? typ. max. ? = 1.0mhz, ??? 54 t j = 25c, i f = 17a, v dd = 50v di/dt = 100a/s t j = 25c, i s = 17a, v gs = 0v showing the integral reverse p-n junction diode. conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 17a v ds = v gs , i d = 250a v ds = 200v, v gs = 0v v gs = 0v, v ds = 0v to 160v v ds = 200v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 0v l = 220nh, c= 0.4f, v gs = 15v mosfet symbol v ds = 25v, i d = 17a v dd = 100v, i d = 17a, v gs = 10v conditions and center of die contact v dd = 160v, v gs = 15v, r g = 4.7 ? v ds = 160v, r g = 4.7 ?, t j = 25c l = 220nh, c= 0.4f, v gs = 15v v ds = 160v, r g = 4.7 ?, t j = 100c v ds = 25v
www.irf.com 3 fig 6. typical e pulse vs. drain current fig 5. typical e pulse vs. drain-to-source voltage fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature 130 140 150 160 170 180 190 i d, peak drain current (a) 0 200 400 600 800 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = variable 100c 25c 110 120 130 140 150 160 170 v ds, drain-to -source voltage (v) 100 200 300 400 500 600 700 800 900 1000 e n e r g y p e r p u l s e ( j ) l = 220nh c = 0.4f 100c 25c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 17a v gs = 10v 3.0 4.0 5.0 6.0 7.0 8.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 25v 60s pulse width t j = 25c t j = 150c 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 150c 7.0v vgs top 15v 10v 8.0v bottom 7.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60s pulse width tj = 25c 7.0v vgs top 15v 10v 8.0v bottom 7.0v
4 www.irf.com fig 11. maximum drain current vs. case temperature fig 8. typical source-drain diode forward voltage fig 12. maximum safe operating area fig 7. typical e pulse vs.temperature fig 10. typical gate charge vs.gate-to-source voltage fig 9. typical capacitance vs.drain-to-source voltage 25 50 75 100 125 150 temperature (c) 0 200 400 600 800 1000 1200 1400 e n e r g y p e r p u l s e ( j ) l = 220nh c= 0.4f c= 0.3f c= 0.2f 1 10 100 1000 v ds , drain-to-source voltage (v) 0 2000 4000 6000 8000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 100 120 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v v ds = 40v i d = 17a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1sec 10sec operation in this area limited by r ds (on) 100sec 25 50 75 100 125 150 t c , casetemperature (c) 0 10 20 30 i d , d r a i n c u r r e n t ( a )
www.irf.com 5 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 17. maximum effective transient thermal impedance, junction-to-case fig 15. threshold voltage vs. temperature fig 14. maximum avalanche energy vs. temperature fig 13. on-resistance vs. gate voltage fig 16. typical repetitive peak current vs. case temperature ri (c/w) i (sec) 0.44978 0.000177 0.9085 0.105329 1.3717 2.0127 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 5 6 7 8 9 10 v gs , gate-to-source voltage (v) 0.00 0.04 0.08 0.12 0.16 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) t j = 25c t j = 125c i d = 17a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 240 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.5a 3.0a bottom 16a 25 50 75 100 125 150 case temperature (c) 0 20 40 60 80 r e p e t i t i v e p e a k c u r r e n t ( a ) ton= 1s duty cycle = 0.25 half sine wave square pulse
6 www.irf.com fig 18. for n-channel hexfet power mosfets
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? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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# $$ ? !"!!%" fig 19b. unclamped inductive waveforms fig 19a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 20a. gate charge test circuit fig 20b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l
www.irf.com 7 fig 21a. t st and e pulse test circuit fig 21b. t st test waveforms fig 21c. e pulse test waveforms fig 22a. switching time test circuit fig 22b. switching time waveforms &' 1 (
# 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f
8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 09/2007
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.44mh, r g = 25 ? , i as = 16a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. half sine wave with duty cycle = 0.25, ton=1sec. to-220ab full-pak packages are not recommended for surface mount application.

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