emy1 / UMY1N / fmy1a transistors emitter common (dual transistors) emy1 / UMY1N / fmy1a ! ! ! ! features 1) includes a 2sa1037ak and a 2sc2412k transistor in a emt or umt or smt package. 2) pnp and npn transistors have common emitters. 3) mounting cost and area can be cut in half. ! ! ! ! structure epitaxial planar type pnp / npn silicon transistor ! ! ! ! equivalent circuit emy1 / UMY1N fmy1a r 1 tr 1 tr 2 (3) (4) (5) (2) (1) tr 1 tr 2 (3) (2) (1) (4) (5)/(6) ! ! ! ! absolute maximum ratings (ta = 25 c) parameter symbol limits tr 1 tr 2 v cbo 60 50 v ceo v ebo 7 i c 150 ? 60 ? 50 ? 6 ? 150 tj 150 tstg ? 55 + 150 p c emy1, UMY1N 150 (total) unit v v v ma c c mw fmy1a 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. ! ! ! ! external dimensions (units : mm) rohm : emt5 emy1 rohm : umt5 eiaj : sc-88a UMY1N each lead has same dimensions each lead has same dimensions 0to0.1 1.1 0.8 0.3to0.6 0.15 1.6 2.8 2.9 0.95 1.9 ( 4 ) ( 5 ) ( 1 ) 0.3 ( 3 ) 0.95 ( 2 ) abbreviated symbol : y1 abbreviated symbol : y1 abbreviated symbol : y1 rohm : smt5 eiaj : sc-74a fmy1a 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 3 ) ( 5 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0.9 0.15 0~0.1 0.1min. 0.7 2.1 1.3 0.65 2.0 ( 4 ) ( 1 ) ( 6 ) 0.2 1.25 ( 2 ) 0.65 ( 3 )
emy1 / UMY1N / fmy1a transistors ! ! ! ! electrical characteristics (ta = 25 c) tr 1 (pnp) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. ? 60 ? 50 ? 6 ? ? 120 ? ? ? ? ? ? ? ? ? 4 ? ? ? ? 0.1 ? 0.1 560 ? 0.5 5 vi c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 60v v eb = ? 6 v v ce = ? 6v, i c = ? 1ma i c /i b = ? 50ma/ ? 5ma v v a a ? v pf typ. max. unit conditions f t ? 140 ? v ce = ? 12v, i e = 2ma, f = 100mhz v cb = ? 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance tr 2 (npn) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) cob min. 60 50 7 ? ? 120 ? ? ? ? ? ? ? ? ? 2 ? ? ? 0.1 0.1 560 0.4 3.5 vi c = 50 a i c = 1ma i e = 50 a v cb = 60v v eb =7 v v ce = 6v, i c = 1ma i c /i b = 50ma/5ma v v a a ? v pf typ. max. unit conditions f t ? 180 ? v ce = 12v, i e = ? 2ma, f = 100mhz v cb = 12v, i e = 0a, f = 1mhz mhz collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage output capacitance ! ! ! ! packaging specifications packaging type code tr t148 3000 3000 taping basic ordering unit (pieces) UMY1N t2r 8000 emy1 fmy1 type ! ! ! ! electrical characteristic curves tr 1 (pnp) ? 0.2 collector current : ic ( ma) ? 50 ? 20 ? 10 ? 5 ? 2 ? 1 ? 0.5 ? 0.2 ? 0.1 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 ? 1.4 ? 1.6 v ce = ? 6v base to emitter voltage : v be (v) ta=100?c 25?c ? 40?c fig.1 grounded emitter propagation characteristics ? 0.4 ? 4 ? 8 ? 1.2 0 ? 2 ? 6 ? 10 ? 0.8 ? 1.6 ? 2.0 ? 3.5 a ? 7.0 ? 10.5 ? 14.0 ? 17.5 ? 21.0 ? 24.5 ? 28.0 ? 31.5 i b =0 ta=25 ? c ? 35.0 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.2 grounded emitter output characteristics ( i ) ? 40 ? 80 ? 5 ? 3 ? 4 ? 2 ? 1 ? 20 ? 60 ? 100 0 i b =0 ta=25 ? c ? 50 a ? 100 ? 150 ? 200 ? 250 ? 500 ? 450 ? 400 ? 350 ? 300 collector current : i c (ma) collector to emitter voltage : v ce (v) fig.3 grounded emitter output characteristics ( ii )
emy1 / UMY1N / fmy1a transistors dc current gain : h fe collector current : i c (ma) fig.4 dc current gain vs. collector current ( i ) 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ta=25 ? c v ce = ? 5v ? 3v ? 1v 500 200 100 50 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 v ce = ? 6v ta=100 ? c ? 40 ? c 25 ? c dc current gain : h fe collector current : i c (ma) fig.5 dc current gain vs. collector current ( ii ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 ta=25 ? c i c /i b =50 20 10 collector current : i c (ma) collector saturation voltage : v ce (sat) ( v) fig.6 collector-emitter saturation voltage vs. collector current ( i ) ? 0.1 ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 ? 1 ? 0.5 ? 0.2 ? 0.05 l c /l b =10 ta=100 ? c 25 ? c ? 40 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.7 collector-emitter saturation voltage vs. collector current ( ii ) 50 100 0.5 20 50 100 200 500 1000 12 510 ta=25 ? c v ce = ? 12v emitter current : i e (ma) transition frequency : f t (mhz) fig.8 gain bandwidth product vs. emitter current -0.5 -20 2 5 10 -1 -2 -5 -10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.9 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a tr 2 (npn) 0 0.1 0.2 0.5 2 20 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 5 10 ta=100 ? c v ce = 6v 25 ? c ? 55 ? c collector current : i c ( ma) base to emitter voltage : v be (v) fig.10 grounded emitter propagation characteristics 0 20 40 60 80 100 0.4 0.8 1.2 1.6 2.0 0 0.05ma 0.10ma 0.15ma 0.25ma 0.30ma 0.35ma 0.20ma ta=25 ? c i b =0a 0.40ma 0.50ma 0.45ma collector current : i c (ma) collector to emitter voltage : v ce (v) fig.11 grounded emitter output characteristics ( i ) 0 0 2 8 10 4 8 12 16 4 6 20 i b =0a ta=25 ? c 3 a 6 a 9 a 12 a 15 a 18 a 21 a 24 a 27 a 30 a collector current : i c (ma) collector to emitter voltage : v ce (v) fig.12 grounded emitter output characteristics ( ii )
emy1 / UMY1N / fmy1a transistors 0.2 20 10 0.5 1 2 5 10 20 50 100 200 50 100 200 500 v ce =5v 3v 1v ta=25 ? c dc current gain : h fe collector current : i c (ma) fig.13 dc current gain vs. collector current ( i ) 0.2 0.5 1 2 5 10 20 50 100 200 20 10 50 100 200 500 25 ? c ? 55 ? c ta=100 ? c v ce =5v dc current gain : h fe collector current : i c (ma) fig.14 dc current gain vs. collector current ( ii ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =50 20 10 ta=25 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.15 collector-emitter saturation voltage vs. collector current ( i ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 200 i c /i b =10 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.16 collector-emitter saturation voltage vs. collector current ( ii ) 0.2 0.01 0.02 0.05 0.1 0.2 0.5 0.5 1 2 5 10 20 50 100 i c /i b =50 ta=100 ? c 25 ? c ? 55 ? c collector saturation voltage : v ce (sat) (v) collector current : i c (ma) fig.17 collector-emitter saturation voltage vs. collector current ( iii ) 50 ? 0.5 ? 1 ? 2 ? 5 ? 10 ? 20 ? 50 ? 100 100 200 500 ta=25 ? c v ce =6v emitter current : i e (ma) transition frequency : f t (mhz) fig.18 gain bandwidth product vs. emitter current 0.2 0.5 1 2 5 10 20 50 1 2 5 10 20 cib cob collector to base voltage : v cb (v) emitter to base voltage : v eb (v) collector output capacitance : cob (pf) emitter input capacitance : cib (pf) fig.19 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage ta=25 ? c f = 1mhz i e =0a i c =0a ? 0.2 ? 0.5 ? 1 ? 2 ? 5 ? 10 10 20 50 100 200 emitter current : i e (ma) fig.20 base-collector time constant vs. emitter current base collector time constant : cc r bb' (ps) ta=25 ? c f=32mh z v cb =6v
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