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tig067ss no. a1067-1/9 features ? low-saturation voltage ? 4.0v drive ? enhansment type ? built-in gate-to-emitter protection diode ? high speed switching ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-emitter voltage (dc) v ces 400 v collector-to-emitter voltage (pulse) v cesp pw 1ms 450 v gate-to-emitter voltage (dc) v ges 6 v gate-to-emitter voltage (pulse) v gesp pw 1ms 8 v collector current (pulse) i cp c m =600 f 150 a maximum collector-to-emitter dv / dt dv / dt v ce 320v, starting tch=25 c 1500 v / s allowable power dissipation p d when mounted on fr4 substrate (11,680mm 2 1.6mm) 1.2 w channel temperature tch 150 c storage temperature tstg -40 to +150 c package dimensions unit : mm (typ) 7072-002 ordering number : ENA1067 o0312pj tkim tc-00002673 sanyo semiconductors data sheet tig067ss n-channel igbt light-controlling flash applications http://www.sanyosemi.com/en/network/ product & package information ? package : soic8 ? jeita, jedec : sc-87, sot-96 ? minimum packing quantity : 2500 pcs./reel packing type: tl marking electrical connection 4.9 0.22 6.0 3.9 1.375 14 5 8 0.445 1.27 0.715 0.375 1.55 0.175 0.254 (gage plane) 1 : emitter 2 : emitter 3 : emitter 4 : gate 5 : collector 6 : collector 7 : collector 8 : collector sanyo : soic8 tl tig 067 lot no. 1 to 3 5 to 8 4 tig067ss-tl-2w
tig067ss no. a1067-2/9 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector-to-emitter breakdown voltage v (br)ces i c =2ma, v ge =0v 400 v collector-to-emitter cutoff current i ces v ce =320v, v ge =0v 10 a gate-to-emitter leakage current i ges v ge =6v, v ce =0v 10 a gate-to-emitter threshold voltage v ge (off) v ce =10v, i c =1ma 0.4 1.0 v collector-to-emitter saturation voltage v ce (sat) i c =150a, v ge =4v 3.8 5 v input capacitance cies v ce =10v, f=1mhz 5100 pf output capacitance coes 59 pf reverse transfer capacitance cres 43 pf fall time t f i c =150a, v cc =320v, resistor load v ge =4v, r g =36 270 ns fig1 large current r load switching circuit note1. gate series resistance r g 36 is recommended for protection purpose at the time of turn off. however, if dv / dt 1500 / s is satis ed at customer?s actual set evaluation, r g < 36 can also be used. note2. the collector voltage gradient dv / dt must be smaller than 1500v / s to protect the device when it is turned off. ordering information device package shipping memo tig067ss-tl-2w soic8 2,500pcs./reel pb free and halogen free 100k c m r l r g v cc + tig067ss 4v 0v tig067ss no. a1067-3/9 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ge gate-to-emitter voltage, v ge -- v collector current, i c -- a case temperature, tc -- c gate-to-emitter cutoff voltage, v ge (off) -- v v ge (off) -- tc collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v case temperature, tc -- c v ce (sat) -- tc collector-to-emitter saturation voltage, v ce (sat) -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v v ce -- v ge gate-to-emitter voltage, v ge -- v collector-to-emitter voltage, v ce -- v cies, coes, cres -- pf cies, coes, cres -- v ce it15739 05075 100 125 150 25 --25 --50 5 6 4 3 1 2 i c =150a v ge =4v 4 3 1 2 it15736 it15738 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc= --25 c i c =150a 4 3 1 2 it15737 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc=25 c i c =150a 100a it15540 0 50 75 100 125 150 25 --25 --50 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0161820 68 41214 10 2 10 100 7 5 3 2 10000 1000 7 5 3 2 7 5 3 2 it15741 cies coes cres f=1mhz 4 3 1 2 1.0 1.5 10 9 8 7 6 5 2.0 3.0 2.5 3.5 4.0 4.5 5.0 130a 100a tc= 75 c i c =150a v ce =10v i c =1ma 130a it15734 0 0 25 50 75 125 100 200 150 175 it15735 0 0 12 5 7 69 8 34 10 25 50 75 175 125 100 200 150 1.0 1.5 0.5 2.0 3.0 2.5 5.0 4.0 4.5 3.5 v ge =5.0v 4.0v 3.0v v ce =5v 2.5v 25 c 75 c tc= - -25 c tc=25 c tig067ss no. a1067-4/9 sw time -- r g switching time, sw time -- ns sw time -- i cp switching time, sw time -- ns gate-to-emitter voltage, v ge -- v collector current (pulse), i cp -- a collector current (pulse), i cp -- a collector current (pulse), i cp -- a maximum capacitor, c m -- f c m -- i cp i cp -- v ge dv / dt -- r g gate series resistance, r g -- turn off dv / dt -- v / s gate series resistance, r g -- dv / dt -- turn off i c turn off collector current, turn off i c -- a dv / dt, dv / dt -- v / s it15747 20 40 60 80 100 120 140 0 180 160 200 100 0 300 400 500 600 700 800 v ge =4v v ce =320v it15746 34 7 689 5 2 1 0 0 20 40 60 80 100 120 140 180 160 tc 70 c c m =600 f it15745 50 60 70 90 80 100 30 20 40 10 0 0 500 1000 1500 2500 2000 3000 switching test circuit fig.1 v ge =4v v cc =320v i cp =150a tc=25 c tc=70 c it15748 20 40 60 80 100 120 140 0 180 160 0 250 500 750 1250 1000 1750 1500 2000 tc 70 c v ce =320v 23 57 3 2 100 10 it15923 1000 3 2 2 7 5 3 7 5 3 2 100 10 t r t d (off) t d (on) t f 0 20406080 120 100 it15924 1000 7 7 5 3 2 100 3 5 3 2 2 t r t d (off) t d (on) t f switching test circuit fig.1 v ge =4v v cc =320v r g =36 switching test circuit fig.1 v ge =4v v cc =320v i cp =150a c m =600 f pw=50 s p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w 0.8 1.2 1.0 1.4 0.4 0.2 0.6 0 0 160 140 120 100 80 60 40 20 it16955 when mounted on fr4 substrate (11,680mm 2 ? 1.6mm) tig067ss no. a1067-5/9 de nition of dv/dt dv/dt is de ned as the maximum slope of the below v ce curve during turn-off period. dv/dt= v ce / t= v ce /100ns overall waveform enlarged picture of turn-off period de nition of switching time v ge v ce i c v ge :10% v ce :90% v ge :90% v ce :10% v ce :10% t d (on) t d (off) t r t f i c :90% i c :10% t t t v,i v ce i c i cp turn off i c t turn-off period t=100ns v ce v ce turn off v ce tig067ss no. a1067-6/9 taping speci cation tig067ss-tl-2w 3 d f n l q j ) r u p d w 0 d [ l p x p 1 x p e h u r i g h y l f h v f r q w d l q h g s f v 3 d f n l q j i r u p d w 3 d f n d j h 1 d p h & |