elektronische bauelemente czd2983 npn epitaxial planar silicon transistor 21-jan-2013 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free description the czd2983 is designed for power amplifier and driver stage amplifier applications. features ? high transition frequency f t = 100mhz (typ.) ? complements to czd1225 classification of hfe rank czd2983-o czd2983-y range 70 ~ 140 120 ~ 240 marking package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter s y mbol ratin g sunit collector to base voltage v cbo 160 v collector to emitter voltage v ceo 160 v emitter to base voltage v ebo 5 v collector current i c 1.5 a base current i b 0.3 a t a =25c p d 1 w total device dissipation t c =25c p d 15 w junction temperature t j 150 storage temperature t stg -55 ~ 150 d-pack (to-252) date code 2983 ???? ? 1 2 3 a c d n o p g e f h k j m b millimete r millimete r ref. min. max. ref. min. max. a 6.35 6.90 j 2.30 ref. b 4.95 5.50 k 0.64 1.14 c 2.10 2.50 m 0.50 1.14 d 0.43 0.9 n 1.3 1.8 e 6.0 7.5 o 0 0.13 f 2.80 ref p 0.58ref. g 5.40 6.40 h 0.60 1.20
elektronische bauelemente czd2983 npn epitaxial planar silicon transistor 21-jan-2013 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage bv cbo 160 - - v i c = 1ma, i e =0 collector-emitter breakdown voltage bv ceo 160 - - v i c = 10ma, i b =0 emitter-base breakdown voltage bv ebo 5 - - v i e = 1ma, i c =0 collector cut-off current i cbo - - 1 a v cb = 160v, i e =0 emitter cut-off current i ebo - - 1 a v eb = 5v, i c =0 collector-emitter sa turation voltage 1 v ce(sat) - - 1.5 v i c = 500ma, i b = 50ma base-emitter satu ration voltage 1 v be(on) - - 1.0 v v ce = 5v, i c = 500ma dc current gain 1 h fe 70 - 240 v ce = 5v, i c = 100ma transition frequency f t - 100 - mhz v ce = 10v, i c = 100ma output capacitance c ob - 25 - pf v cb =10v, i e =0, f=1mhz note: 1. measured under pulse condition. pulse width Q 300 s, duty cycle Q 2%
elektronische bauelemente czd2983 npn epitaxial planar silicon transistor 21-jan-2013 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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