copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.1.0 features high ruggedness r ds( on ) (max0.24 ? )@v gs =10v gate charge (typical 13 nc) improved dv/dt capability 100% avalanche tested n - channel sot - 23 mosfet absolute maximum ratings 1/5 bv dss : 100v i d : 2a r ds(on) :0.24 1 2 3 samwin item sales type marking package packaging 1 sw e 2n10 SW2N10 sot - 23 rell order codes symbol parameter value unit v dss drain to source voltage 100 v i d continuous drain current (@t c =25 o c) 2* a continuous drain current (@t c =100 o c) 1.26* a i dm drain current pulsed (note 1) 8 a v gs gate to source voltage 15 v e as single pulsed avalanche energy (note 2) 64 mj e ar repetitive avalanche energy (note 1) 5 mj dv/dt peak diode recovery dv/dt (note 3) 5 v/ns t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics . this power mosfet is usually used at high efficient dc to dc converter block and switch mode power supply . *. drain current is limited by junction temperature. 1. gate 2. source 3. drain 1 2 3 sot - 23 sw2 n10
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.1.0 electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 100 v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c 0.1 v/ o c i dss drain to source leakage current v ds =100v, v gs =0v 1 ua v ds =80v, t c =125 o c 50 ua i gss gate to source leakage current, forward v gs =15v, v ds =0v 100 na v gs = - 15v, v ds =0v 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 3 v r ds(on) drain to source on state resistance v gs =10v, i d =3.5a 0.20 0.24 ? v gs =4.5v, i d =2a 0.22 0.24 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 550 pf c oss output capacitance 50 c rss reverse transfer capacitance 33 t d(on) turn on delay time v ds =50v, i d =2a r g =25? (note 4 5 ) 3.5 ns tr rising time 22 t d(off) turn off delay time 40 t f fall time 25 q g total gate charge v ds =80v, v gs =10v, i d =2a (note 4 5 ) 13 nc q gs gate - source charge 1.7 q gd gate - drain charge 3.2 source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet 2 a i sm pulsed source current 8 a v sd diode forward voltage drop. i s =2a, v gs =0v 1.1 v t rr reverse recovery time i s =2a, v gs =0v, di f /dt=100a/us 28 ns q rr reverse recovery charge 33 n c . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 32.1mh, i as = 2a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 2a, di/dt = 100a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. samwin 2/5 sw2 n10
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.1.0 fig. 1. on - state characteristics fig. 2. on - resistance variation vs. drain current and gate voltage fig. 3. gate charge characteristics 3/5 samwin fig. 6. on resistance variation vs. junction temperature fig 5. breakdown voltage variation vs. junction temperature fig. 4. on state current vs. diode forward voltage sw2 n10
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.1.0 4/5 samwin fig. 7. c apacitance characteristics v dd dut v ds r l r gs 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f fig. 8. gate charge test circuit & waveform fig. 9. switching time test circuit & waveform v ds same type as dut dut v gs 0.5ma q g q gs q gd v gs charge nc 10v sw2 n10
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.1.0 fig. 10. unclamped inductive switching test circuit & waveform 5/5 samwin fig. 11. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw2 n10
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