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cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 1/12 mtc9930q8 cystek product specification 2n- and 2p-channel enhancement mode mosfet mtc9930q8 n-ch p-ch bv dss 30v -30v i d 6a -4.4a r dson(typ.) 17m 35m description the mtc9930q8 consists of two n-channel and two p-channel enhancement-mode mosfet in a single sop-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTC9930Q8-0-T3-G sop-8 (pb-free lead plating and halogen-free package) 2500 pcs / tape & reel mtc9930q8 sop-8 g gate s source d drain p2g n 2d/p2d p1s/p2s p1g n 1s/n2s n 2g n 1d/p1d environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13? reel product rank, zero for no rank products n 1g pin #1 product name
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 2/12 mtc9930q8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 gate-source voltage v gs 25 25 v t a =25 c, v gs =10v (-10v) 6 -4.4 continuous drain current (note 2) t a =70 c, v gs =10v (-10v) i d 4.8 -3.5 pulsed drain current (note 1) i dm 24 -20 a t a =25 c 1.38 power dissipation t a =70 c p d 0.88 w operating junction and storage te mperature range tj; tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r jc 36 thermal resistance, junction-to-ambient, max r ja 90 (note 2) c/w note : 1.pulse width limited by maximum junction temperature. 2.surface mounted on 1 in2 copper pad of fr-4 board, pulse width 10s. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =25v, v ds =0v - - 1 v ds =30v, v gs =0v i dss - - 25 a v ds =24v, v gs =0v, tj=70 c - 17 24 i d =5a, v gs =10v *r ds(on) - 21 30 m i d =3a, v gs =4.5v *g fs - 6.7 - s v ds =5v, i d =5a dynamic ciss - 496 750 coss - 61 - crss - 47 - pf v ds =25v, v gs =0v, f=1mhz *td (on) - 6.2 - *tr - 17.2 - *td (off) - 30.2 - *tf - 7.6 - ns v ds =15v, i d =1a, v gs =10v, r g =6 *qg - 5.6 9 *qgs - 1.9 - *qgd - 2.1 - nc v ds =15v, i d =6a, v gs =4.5v body diode *v sd - 0.78 1.2 v v gs= 0v, i s =1.2a *trr - 7.7 - ns *qrr - 3.3 - nc i f =5a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 3/12 mtc9930q8 cystek product specification p-channel electrical characteristics (tc=25c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0v, i d =-250 a v gs(th) -1.0 - -2.5 v v ds =vgs, i d =-250 a i gss - - 100 na v gs =25v, v ds =0v - - -1 v ds =-30v, v gs =0v i dss - - -25 a v ds =-24v, v gs =0v, tj=70 c - 35 48 i d =-4a, v gs =-10v *r ds(on) - 46 70 m i d =-2a, v gs =-4.5v *g fs - 7.8 - s v ds =-10v, i d =-5a dynamic ciss - 597 900 coss - 63 - crss - 51 - pf v ds =-25v, v gs =0v, f=1mhz *td (on) - 5.6 - *tr - 17.6 - *td (off) - 64.4 - *tf - 33.8 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =6 *qg - 6.7 11 *qgs - 2.2 - *qgd - 2.5 - nc v ds =-15v, i d =-4.4a, v gs =-4.5v body diode *v sd - -0.78 -1.2 v v gs =0v, i s =-1.2a *trr - 7.7 - ns i f =-4.5a, di f /dt=100a/ s *qrr - 3.0 - nc *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 4/12 mtc9930q8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 01234 5 brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v v ds , drain-source voltage(v) i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v, 4v 3.5 v 3v v gs =2.5v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =4.5v v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 024681 0 0 tj=25c tj=150c v gs =0v drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =5a r dson @tj=25c : 17m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =5a
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 5/12 mtc9930q8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =6a v ds =15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =90c/w single pulse dc 100ms r dson limited 100 s 10ms 1ms 1s maximum drain current vs junction temperature 0 1 2 3 4 5 6 7 8 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c v gs =10v r ja =90c/w
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 6/12 mtc9930q8 cystek product specification typical characteristics(cont.) : q1( n-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =90c/w typical transfer characteristics 0 2 4 6 8 10 12 14 16 18 20 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 7/12 mtc9930q8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 01234 5 brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage -i d =250 a, v gs =0v 10v,9v,8v,7v,6v,5v -v ds , drain-source voltage(v) -i d , drain current (a) 4v 3.5v 3 v -v gs =2.5v static drain-source on-state resistance vs drain current 10 100 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) -v gs =4.5v -v gs =10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468 -i dr , reverse drain current(a) -v sd , source-drain voltage(v) 10 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 50 100 150 200 250 300 350 400 450 500 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance -v gs =10v, -i d =4a r dson @tj=25c : 35m typ. -v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) -i d =4a
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 8/12 mtc9930q8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 25 30 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -v gs(th) , normalized threshold voltage -i d =250 a -i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance(s) -v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 02468101214 qg, total gate charge(nc) -v gs , gate-source voltage(v) i d =-4.4a v ds =-15v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current(a) t a =25c, tj=150c v gs =-10v, r ja =90c/w single pulse dc r dson limited 100 s 1ms 10ms 100ms 1s maximum drain current vs junction temperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c v gs =-10v r ja =90c/w
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 9/12 mtc9930q8 cystek product specification typical characteristics(cont.) : q2(p-channel) single pulse power rating, junction to ambient (note on page 2) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =90c/w typical transfer characteristics 0 2 4 6 8 10 12 14 16 18 20 012345 -v gs , gate-source voltage(v) -i d , drain current(a) v ds =-10v transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t1/t2 3.t jm -t a =p dm *r ja (t) 4.r ja =90c/w
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 10/12 mtc9930q8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 11/12 mtc9930q8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c839q8 issued date : 2016.06.16 revised date : page no. : 12/12 mtc9930q8 cystek product specification sop-8 dimension 8-lead sop-8 plastic package cystek packa g e code: q8 marking: date code device name 9930 date code(counting from left to right) : 1 st code: year code, the last digit of christian year 2 nd code : month code, jan a, feb b, mar c, aprd may e, jun f, jul g, a u g h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99 millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .

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