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  inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2SC5900 description high breakdown voltage- : v cbo = 1700v (min) high switching speed high reliability applications color tv horizontal deflection output applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 1700 v v ceo collector-emitter v oltage 800 v v ebo emitter-base voltage 5 v i c collector current- continuous 8 a i cp collector current-pulse 16 a p c collector power dissipation @ t a =25 3.0 w collector power dissipation @ t c =25 80 t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SC5900 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 4a; i b = 1a 3.0 v v be (sat) base-emitter saturation voltage i c = 4a; i b = 1a 1.5 v i cbo collector cutoff current v cb = 800v ; i e = 0 10 a i ces collector cutoff current v ce = 1700v ; r be = 0 1.0 ma i ebo emitter cutoff current v eb = 4v ; i c = 0 10 ma h fe-1 dc current gain i c = 1a ; v ce = 5v 10 h fe-2 dc current gain i c =4.5a ; v ce = 5v 4 9 tstg storage time ic= 3a ;ib1=0.5a; ib2= -1.5a 3.0 s tf fall time ic= 3a ;ib1=0.5a; ib2= -1.5a 0.2 s


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