? 2012 ixys all rights reserved 1 - 4 20121102 MIXA225RF1200TSF ixys reserves the right to change limits, test conditions and dimensions. tentative xpt igbt module features / advantages: ? high level of integration - only one power semiconductor module required for the whole drive ? rugged xpt design (xtreme light punch through) results in: - short circuit rated for 10 sec. - very low gate charge - low emi - square rbsoa @ 3x ic ? thin wafer technology combined with the xpt design results in a competitive low v ce(sat) ? temperature sense included ? sonic? diode - fast and soft reverse recovery - low operating forward voltage package: simbus f ? industry standard outline ? rohs compliant ? soldering pins for pcb mounting ? height: 17 mm ? base plate: copper internally dcb isolated ? advanced power cycling part number MIXA225RF1200TSF boost chopper + free wheeling diodes + ntc applications: ? brake for ac motor drives ? boost chopper ? switch reluctance drives v ces = 1200 v i c25 = 360 a v ce(sat) = 1.8 v 5 6 4 1 2 8 1 0 / 1 1 3 9 d d boost t
? 2012 ixys all rights reserved 2 - 4 20121102 MIXA225RF1200TSF ixys reserves the right to change limits, test conditions and dimensions. tentative igbt t ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 125c 1200 v v ges v gem max. dc gate voltage max. transient gate emitter voltage 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 360 250 a a p tot total power dissipation t c = 25c 1100 w v ce(sat) collector emitter saturation voltage i c = 225 a; v ge = 15 v t vj = 25c t vj = 125c 1.8 2.1 2.1 v v v ge(th) gate emitter threshold voltage i c = 9 ma; v ge = v ce t vj = 25c 5.4 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 125c 0.3 0.3 ma ma i ges gate emitter leakage current v ge = 20 v; v ce = 0 v 1.5 a q g(on) total gate charge v ce = 600 v; v ge = 15 v; i c = 225 a 690 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 125c v ce = 600 v; i c = 225 a v ge = 15 v; r g = 3.3 w 60 70 280 310 20 27 ns ns ns ns mj mj rbsoa i cm reverse bias safe operating area v ge = 15 v; r g = 3.3 w t vj = 125c v cemax = 1200 v 500 a scsoa t sc i sc short circuit safe operating area short circuit duration short circuit current v cemax = 1200 v v ce = 900 v; v ge = 15 v; t vj = 125c r g = 3.3 w ; non-repetitive 900 10 s a r thjc thermal resistance junction to case 0.115 k/w r thch thermal resistance case to heatsink 0.045 k/w diode d boost v rrm max. repetitive reverse voltage t vj = 25c 1200 v i f25 i f80 forward current t c = 25c t c = 80c 265 185 a a v f forward voltage i f = 225 a; v ge = 0 v t vj = 25c t vj = 125c 1.80 1.70 2.10 v v i r reverse current v r = v rrm t vj = 25c t vj = 125c 0.3 0.3 ma ma q rr i rm t rr e rec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v -di f /dt = 3300 a/s t vj = 125c i f = 225 a; v ge = 0 v 32 250 340 11.7 c a ns mj r thjc thermal resistance junction to case 0.145 k/w r thch thermal resistance case to heatsink 0.05 k/w
? 2012 ixys all rights reserved 3 - 4 20121102 MIXA225RF1200TSF ixys reserves the right to change limits, test conditions and dimensions. tentative package simbus f ratings symbol defnitions conditions min. typ. max. unit i rms rms current per terminal a t stg storage temperature -40 125 c t vjm virtual junction temperature -40 150 c weight 350 g i isol < 1 ma; 50/60 hz 3400 v~ m d m t mounting torque (m5) terminal torque (m6) 3 3 6 6 nm nm d spp/app d spb/apb creepage distance on surface / striking distance through air terminal to terminal 12.7 mm terminal to backside 10.0 mm v isol isolation voltage t = 1 second 50/60 hz, rms, i isol < 1 ma 3000 v t = 1 minute 2500 v r term-chip resistance terminal to chip v = v cesat + 2x r term-chip i c resp. v = v f + 2x ri f 0.65 mw part number m = module i = igbt x = xpt a = standard 225 = current rating [a] rf = boost / brake chopper + free wheeling diode 1200 = reverse voltage [v] t = ntc eh = e3-pack ordering part name marking on product delivering mode base qty ordering code standard MIXA225RF1200TSF MIXA225RF1200TSF box 3 511581 x x x x x - x x x x x y y wwx 2d data matrix logo ul part number date code location temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/50 resistance temperature coeffcient t c = 25c 4.75 5.0 3375 5.25 kw k diode d ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 25c 1200 v i f25 i f80 forward current t c = 25c t c = 80c 65 45 a a v f forward voltage i f = 60 a; v ge = 0 v t vj = 25c t vj = 125c 2.0 2.0 2.2 v v i r reverse current * not applicable, see ices value of igbt t v r = v rrm t vj = 25c t vj = 125c * * ma ma r thjc thermal resistance junction to case 0.5 k/w r thch thermal resistance case to heatsink 0.2 k/w
? 2012 ixys all rights reserved 4 - 4 20121102 MIXA225RF1200TSF ixys reserves the right to change limits, test conditions and dimensions. tentative outlines simbus f 1 , 2 1 7 2 0 , 5 2 2 5 0 5 7 , 5 6 2 9 4 , 5 1 1 0 1 2 2 1 3 7 1 5 2 0 , 8 r 2 , 5 0 7 , 2 5 1 1 , 0 6 3 3 , 9 2 3 7 , 7 3 6 0 , 5 9 6 4 , 4 8 7 , 2 6 7 , 7 5 0 3 , 7 5 5 7 , 9 6 0 , 4 6 10 1 1 9 8 7 6 5 1 2 4 3 5 6 4 1 2 8 1 0 / 1 1 3 9 d d boost t
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