p p j d 9 n10 a july 9 ,201 5 - rev.00 page 1 1 00 v n - c hannel mosfet v oltage 1 0 0 v c urrent 9 a to - 252 f eatures ? r ds(on) , v gs @10v,i d @ 4. 5 a < 152 m ? r ds(on) , v gs @ 4.5 v,i d @ 3 .0 a< 15 8 m ? high switching speed ? improved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as p er iec61249 std. (halogen free) m echanical data ? case : to - 252 package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.0104 ounces, 0.297 grams m aximum r atings and t hermal c haracteristics (t a =25 o c unless otherwise noted) parameter symbol limit units drain - source voltage v ds 10 0 v gate - source voltage v gs + 2 0 v continuous drain current t c =25 o c i d 9 a t c = 100 o c 6 pulsed drain current (note 1 ) t c =25 o c i dm 18 power dissipation t c =25 o c p d 31 w t c = 100 o c 12 continuous drain current t a =25 o c i d 2.4 a t a = 70 o c 1.9 a power dissipation t a =25 o c p d 2.0 w power dissipation t a = 70 o c 1.3 single pulse avalanche energy (note 6 ) e as 1.8 mj operating junction and storage temperature range t j ,t stg - 55~1 50 o c typical thermal resistance (note 4,5 ) junction to case r jc o c /w j unction to ambient r ja 62.5 ? limited only by maximum junction temperature
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 1 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1 . 0 1.72 2 . 5 v drain - source on - state resistance r ds(on) v gs =10v,i d = 4 .5 a - 130 152 m gs = 4.5 v,i d = 3 a - 135 158 zero gate voltage drain current i dss v ds = 8 0v,v gs =0v - - 1 ua gate - source leakage current i gss v gs = + 2 0 v,v ds =0v - - + 10 0 na dynamic (note 4 ) total gate charge q g v ds = 60 v, i d = 9 a, v gs = 10 v (note 2 , 3 ) - 19 - nc gate - source charge q gs - 2.9 - gate - drain charge q gd - 3.2 - input capacitance ciss v ds = 25 v, v gs =0v, f=1.0mhz - 10 21 - pf output capacitance coss - 38 - reverse transfer capacitance crss - 17 - turn - on delay time td (on) v d s = 50 v, rl=5.6 gs = 10v , r g = 6 (note 2 , 3 ) - 6.1 - ns turn - on rise time t r - 2 7 - turn - off delay time td (off) - 28 - turn - off fall time t f - 11 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 9 a diode forward voltage v sd i s = 1 a,v gs =0v - 0. 7 4 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics 3. repetitive rating, pulse width limited by junction temperature tj(max)=150c. ratings are based on low frequency and duty cycles to keep initial t j =25c. 4. the maximum current rating is package limited 5. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. m ount ed on a 1 inch 2 with 2oz. square pad of copper . 6. the test condition is l= 0.1 mh, i as = 6 a, v dd = 25 v , v gs = 10 v 7. guaranteed by design, not subject to product ion testing
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 3 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage variation vs. temperature fig. 9 threshold voltage variation with temperature . fig. 10 capacitance vs. drain - source voltage . fig. 11 maximum safe operating area
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 5 t ypical characteristic curves fig. 12 normalized thermal transient impedance
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 6 packaging information . to - 252 dimension u nit: mm
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 7 part no packing code version mounting pad layout part n o packing code package type packing type marking ver sion pjd9 n10 a _l2_00001 to - 252 3,000pcs / 13
p p j d 9 n10 a july 9 ,201 5 - rev.00 page 8 disclaimer
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