QSZ4 transistors rev.b 1/4 general purpose transistor (isolated transistor and diode) QSZ4 a 2sb1706 and a 2sd2671 are housed independently in a tsmt5 package. z applications dc / dc converter motor driver z features 1) low v ce (sat) 2) small package z structure silicon epitaxial planar transistor z equivalent circuit tr2 tr1 (4) (5) (2) (3) (1) z packaging specifications type QSZ4 tsmt5 z04 tr 3000 package marking code basic ordering unit(pieces) z dimensions (unit : mm) rohm : tsmt5 QSZ4 abbreviated symbol : z04 each lead has same dimensions (5) (4) (1) (2) (3) sot-25t downloaded from: http:///
QSZ4 transistors rev.b 2/4 z absolute maximum ratings (ta=25 c) tr1 parameter symbol v cbo v ceo v ebo i c i cp pc tj tstg limits 30 30 6 2 500150 55 to + 150 4 ? 2 ? 3 ? 3 ? 1 unit vv v a a mw/total 1.25 w/total 0.9 w/element c c ? 1 single pulse, pw=1ms. ? 2 each terminal mounted on a recommended land. ? 3 mounted on a 25 25 t 0.8mm ceramic substrate. collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature tr 2 parameter symbol v cbo v ceo v ebo i c i cp pc tj tstg limits 3030 62 500150 55 to + 150 4 ? 2 ? 3 ? 3 ? 1 unit vv v a a mw/total 1.25 w/total 0.9 w/element c c ? 1 single pulse, pw=1ms. ? 2 each terminal mounted on a recommended land. ? 3 mounted on a 25 25 t 0.8mm ceramic substrate. collector-base voltagecollector-emitter voltage emitter-base voltage collector current power dissipation junction temperature range of storage temperature z electrical characteristics (ta=25 c) tr1 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz f t 280 mhz v ce = 2v, i e = 200ma, f = 100mhz bv cbo 30 v i c = 10 a bv ceo 30 v i c = 1ma bv ebo 6 v i e = 10 a i cbo 100 na v cb = 30v i ebo 100 na v eb = 6v v ce(sat) 180 370 mv i c = 1.5a, i b = 75ma h fe 270 680 v ce = 2v, i c = 200ma cob 20 pf ? ? collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency collector output capacitance ? pulsed tr 2 parameter symbol min. typ. max. unit conditions v cb = 10v, i e = 0a, f = 1mhz f t 280 mhz v ce = 2v, i e = 200ma, f = 100mhz bv cbo 30 v i c = 10 a bv ceo 30 v i c = 1ma bv ebo 6 v i e = 10 a i cbo 100 na v cb = 30v i ebo 100 na v eb = 6v v ce(sat) 180 370 mv i c = 1.5a, i b = 75ma h fe 270 680 v ce = 2v, i c = 200ma cob 20 pf ? ? collector-base breakdown voltagecollector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current gain transition frequency collector output capacitance ? pulsed downloaded from: http:///
QSZ4 transistors rev.b 3/4 z electrical characteristic curves tr1(pnp) fig.1 dv current gain vs. collector current 10 100 1000 0.001 0.01 0.1 1 10 collector current : i c (a) dc current gain : h fe vce= 2v pulsed ta=100 c ta = 40 c ta=25 c 0.01 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) collector saturation voltage : v ce(sat) (v) fig.2 collector-emitter saturation voltage vs. collector current ic/ib=20/1 pulsed ta=25 c ta = 40 c ta=100 c 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) base saturation voltage : v be(sat) (v) fig.3 base-emitter saturation voltage vs. collectir current ta=25 cpulsed i c /i b =20/1 i c /i b =50/1 i c /i b =10/1 0.1 1 10 0.01 base to emitter current : v be (v) collector current :i c (a) 0.1 1 10 fig.4 grounded emitter propagation characteristics v be =2v pulsed ta=100 c ta=25 c ta = 40 c 10 100 1000 0.01 0.1 1 10 emitter current : i e (a) transition frequency : ft (mhz) ta=25 c vce= 2v f=100mhz fig.5 gain bandwidth product vs. emitter curent collector current : i c (a) switchingtime : (ns) fig.6 switching time ta= 25 c v ce = 12v i c /i b =20/1 pulsed 0.01 0.1 1 10 1 10 100 1000 10000 tstg tdon tf tr 100 1000 1 10 emitter to base voltage : v be (v) collector to base voltage : v cb (v) collector current :i c (a) 0.001 0.1 100 0.01 1 10 fig.7 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob ic=0af=1mhz ta=25 c downloaded from: http:///
QSZ4 transistors rev.b 4/4 tr2(npn) fig.8 dc current gain vs. collector current 10 100 1000 0.001 0.01 0.1 1 10 collector current : i c (a) dc current gain : h fe vce= 2v pulsed ta=125 c ta=25 c ta = 25 c fig.9 collector-emitter saturation voltage base-emitter saturation voltage vs. collector current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) collector saturation voltage : v ce(sat) (v) ic/ib=20/1 pulsed ta=125 c ta=25 c ta = 25 c 0.1 1 10 0.001 0.01 0.1 1 10 collector current : ic (a) base saturation voltage : v be(sat) (v) ic/ib=20/1pulsed ta=125 c ta=25 c ta = 25 c fig.10 base-emitter saturation voltage vs. collector current fig.11 grounded emitter propagation characteristics base to emitter current : v be (v) collector current : i c (a) 0.001 0.01 0.1 1 10 0 1.4 0.2 0.4 0.6 0.8 1 1.2 vce= 2v pulsed ta=125 c ta=25 c ta = 25 c fig.12 gain bandwidth product vs. emitter current 10 100 1000 0.01 0.1 1 10 emitter current : i e (a) transition frequency : ft (mhz) ta=25 c vce= 2v f= 100mhz fig.13 collector output chapacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage emitter input capacitance : cib (pf) collector output capacitance : cob (pf) 10 100 1000 0.001 0.01 0.1 1 10 100 emitter to base voltage : v eb (v) collector to base voltage : v cb (v) ic=0af=1mhz ta=25 c cob cib downloaded from: http:///
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