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| 1 ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet dpak ipak mosfet 600vcoolmosacepowertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?ceisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforstandardgradeapplications applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 2100 m w i d. 3.7 a q g.typ 6.7 nc i d,pulse 6 a e oss @400v 0.76 j type/orderingcode package marking relatedlinks ipd60r2k1ce pg-to 252 IPU60R2K1CE pg-to 251 60s2k1ce see appendix a tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 3 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 3.7 2.4 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 6 a t c =25c avalanche energy, single pulse e as - - 11 mj i d =0.4a; v dd =50v; see table 11 avalanche energy, repetitive e ar - - 0.06 mj i d =0.4a; v dd =50v; see table 11 avalanche current, repetitive i ar - - 0.4 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation to-251, to252 p tot - - 38 w t c =25c storage temperature t stg -40 - 150 c - operating junction temperature t j -40 - 150 c - continuous diode forward current i s - - 2.7 a t c =25c diode pulse current 2) i s,pulse - - 6 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 9 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 9 2thermalcharacteristics table3thermalcharacteristicsto-251,to-252 values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 3.26 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s 1) limited by t j max . maximum duty cycle d=0.50 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 4 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =0.25ma gate threshold voltage v (gs)th 2.5 3.0 3.5 v v ds = v gs , i d =0.06ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =600, v gs =0v, t j =25c v ds =600, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 1.80 4.68 2.10 - w v gs =10v, i d =0.76a, t j =25c v gs =10v, i d =0.76a, t j =150c gate resistance r g - 12 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 140 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 12 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 8.5 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 30 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 7 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w ;seetable10 rise time t r - 7 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w ;seetable10 turn-off delay time t d(off) - 30 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w ;seetable10 fall time t f - 50 - ns v dd =400v, v gs =10v, i d =0.9a, r g =12.2 w ;seetable10 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 0.8 - nc v dd =480v, i d =0.9a, v gs =0to10v gate to drain charge q gd - 3.6 - nc v dd =480v, i d =0.9a, v gs =0to10v gate charge total q g - 6.7 - nc v dd =480v, i d =0.9a, v gs =0to10v gate plateau voltage v plateau - 5.4 - v v dd =480v, i d =0.9a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss 2) c o(tr) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to80%v o(br)dss tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 5 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =0.9a, t j =25c reverse recovery time t rr - 180 - ns v r =400v, i f =0.9a,d i f /d t =100a/s; see table 9 reverse recovery charge q rr - 0.67 - c v r =400v, i f =0.9a,d i f /d t =100a/s; see table 9 peak reverse recovery current i rrm - 7.1 - a v r =400v, i f =0.9a,d i f /d t =100a/s; see table 9 tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 6 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation(nonfullpak) t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 35 40 p tot =f( t c ) diagram2:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea(nonfullpak) v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 1 s 10 s 100 s 1 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance(nonfullpak) t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 7 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 1 2 3 4 5 6 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 1 2 3 4 1 2 3 4 5 6 7 8 9 10 5v 5.5v 6v 6.5v 7 v 10 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 98% typ r ds(on) =f( t j ); i d =0.76a; v gs =10v tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 8 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 1 2 3 4 5 6 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 480 v 120 v v gs =f( q gate ); i d =0.9apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 10 11 12 e as =f( t j ); i d =0.4a; v dd =50v tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 9 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 520 540 560 580 600 620 640 660 680 700 v br(dss) =f( t j ); i d =0.25ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 e oss = f (v ds ) tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 10 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 11 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 6packageoutlines figure1outlinepg-to252,dimensionsinmm/inches tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 12 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet figure2outlinepg-to251,dimensionsinmm/inches tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 3 3 n l2 l 8.89 0.89 0.035 0.350 9.65 1.37 0.054 0.380 4.57 2.29 millimeters a1 b4 b2 b a dim d1 e e1 c2 d e1 e c 0.90 2.16 0.64 0.65 4.95 min 0.46 5.97 5.04 6.35 4.70 0.46 0.035 0.025 0.085 0.185 0.250 0.198 0.235 0.018 0.018 0.195 0.026 1.14 0.89 2.41 1.15 5.50 max 0.89 6.22 5.77 6.73 5.21 0.60 inches 0.180 0.090 min 0.045 0.035 max 0.095 0.205 0.265 0.227 0.245 0.035 0.024 0.217 0.045 to251-3-21/-341/-345 2.0 european projection issue date scale 0 4mm 0 2.0 revision 31-08-2015 04 document no. z8b00003330 0.85 0.033 2.29 0.090 l1 13 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet 7appendixa table11relatedlinks ? ifxcoolmos tm cewebpage: www.infineon.com ? ifxcoolmos tm ceapplicationnote: www.infineon.com ? ifxcoolmos tm cesimulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 3 3 n l2 l 8.89 0.89 0.035 0.350 9.65 1.37 0.054 0.380 4.57 2.29 millimeters a1 b4 b2 b a dim d1 e e1 c2 d e1 e c 0.90 2.16 0.64 0.65 4.95 min 0.46 5.97 5.04 6.35 4.70 0.46 0.035 0.025 0.085 0.185 0.250 0.198 0.235 0.018 0.018 0.195 0.026 1.14 0.89 2.41 1.15 5.50 max 0.89 6.22 5.77 6.73 5.21 0.60 inches 0.180 0.090 min 0.045 0.035 max 0.095 0.205 0.265 0.227 0.245 0.035 0.024 0.217 0.045 to251-3-21/-341/-345 2.0 european projection issue date scale 0 4mm 0 2.0 revision 31-08-2015 04 document no. z8b00003330 0.85 0.033 2.29 0.090 l1 14 600vcoolmosacepowertransistor ipd60r2k1ce,IPU60R2K1CE 2016-03-31 final data sheet revisionhistory ipd60r2k1ce, IPU60R2K1CE revision:2016-03-31 previous revision date subjects (major changes since last revision) 2014-09-25 release of final version 2015-11-17 updated with qualified for standard grade & updated package drawing 2016-03-31 modified id, rthjc. modified soa, zthjc curves trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2016infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab 1 2 3 1 2 tab 3 d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 2.0 issue date european projection 0 4mm 2.0 scale 0 revision 01-09-2015 05 document no. z8b00003328 *) mold flash not included millimeters 4.57 (bsc) 2.29 (bsc) l4 d n h e1 e1 e e d1 l3 1.18 0.51 0.90 5.02 9.40 6.40 4.70 5.97 3 b3 a dim b2 c b c2 a1 5.00 min 2.16 0.64 0.46 0.65 0.46 0.00 0.046 0.020 0.035 0.198 0.252 0.185 0.235 0.370 1.70 1.00 5.60 5.84 6.22 6.73 1.25 10.48 0.180 (bsc) 0.090 (bsc) 3 0.067 0.220 0.039 0.230 0.265 0.049 0.245 0.413 0.197 0.085 0.025 0.018 0.026 0.018 0.000 5.50 max 2.41 0.15 1.15 0.60 0.89 0.98 inches min 0.217 max 0.006 0.095 0.035 0.024 0.045 0.039 l f6 f1 f2 f3 f4 f5 1.20 6.40 10.60 2.20 5.80 5.76 0.417 0.252 0.087 0.228 0.227 0.047 3 3 n l2 l 8.89 0.89 0.035 0.350 9.65 1.37 0.054 0.380 4.57 2.29 millimeters a1 b4 b2 b a dim d1 e e1 c2 d e1 e c 0.90 2.16 0.64 0.65 4.95 min 0.46 5.97 5.04 6.35 4.70 0.46 0.035 0.025 0.085 0.185 0.250 0.198 0.235 0.018 0.018 0.195 0.026 1.14 0.89 2.41 1.15 5.50 max 0.89 6.22 5.77 6.73 5.21 0.60 inches 0.180 0.090 min 0.045 0.035 max 0.095 0.205 0.265 0.227 0.245 0.035 0.024 0.217 0.045 to251-3-21/-341/-345 2.0 european projection issue date scale 0 4mm 0 2.0 revision 31-08-2015 04 document no. z8b00003330 0.85 0.033 2.29 0.090 l1 |
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