inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK922 description drain current C i d = 15a@ t c =25 drain source voltage- : v dss = 120v(min) static drain-source on-resistance : r ds(on) = 0.15 (max) applications designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage (v gs =0) 120 v v gs gate-source voltage 20 v i d drain current-continuous@ tc=25 15 a p tot total dissipation@tc=25 60 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.0 /w r th j-a thermal resistance,junction to ambient 62.5 /w pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK922 electrical characteristics (t c =25 ) symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 1ma 120 v v gs( th ) gate threshold voltage v ds = v gs ; i d =1ma 2 4 v r ds( on ) drain-source on-stage resistance v gs =10v; i d = 9a 0.15 i gss gate source leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 120v; v gs = 0 500 ua v sd diode forward voltage i f = 15a; v gs =0 2.0 v pdf pdffactory pro www.fineprint.cn
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