dmn3730ufb4 document number: ds 35017 rev. 8 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated 30v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) i d t a = + 25 c 3 0 v 460m ? @ v gs = 4.5 v 0.9a 560m ? @ v gs = 2.5v 0.7a description this mosfet is designed to minimize the on - state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? load s witch ? portable a pplications ? power management functions features and benefits ? 0.4mm u ltra l ow p rofile p ackage for t hin a pplication ? 0.6mm 2 p ackage f ootprint, 10 times s maller than sot23 ? low v gs(th) , can be driven directly from a battery ? low r ds( on ) ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? esd protect ed gate 2kv ? qualified to aec - q101 standards for high reliability mechanical data ? case: x2 - dfn1006 - 3 ? case material: molded plastic, green molding compound ; ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? ter minals: finish C nipdau over copper l eadframe ; solderable per mil - std - 202, method 208 ? weight: 0.001 grams ( a pproximate) ordering information (note 4 ) part number marking reel size (inches) tape width (mm) quantity per reel dmn37 30ufb4 - 7 nf 7 8 3 , 000 dmn3730ufb4 - 7 b nf 7 8 10, 000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporate ds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compound s. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . x2 - dfn1006 - 3 equivalent circuit top view bottom view source body diode gate protection diode gate drain esd protected to 2kv d s g e4
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated marking information dmn3730ufb4 - 7 dmn3730ufb4 - 7b maximum ratings (@ t a = +2 5c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 30 v gate - source voltage v gss 8 continuous drain current v gs = 4.5v (note 6 ) i d 0.91 a t a = + 70 c (note 6 ) 0.73 (note 5 ) 0.75 pulsed dr ain current (note 7 ) i dm 3 thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 6 ) p d 0.69 w (note 5 ) 0.47 thermal resistance, junction to ambient (note 6 ) r ja 180 c/w (note 5 ) 258 operating and storage temperature range t j , t stg - 55 to +150 c notes: 5 . for a d evice surface mounted on a minimum recommended pad layout of an fr4 pcb , in still air conditions; the device is measured when operating i n steady - state condition. 6 . same as note 4, except the device measured at t ? 10 sec onds. 7 . same as note 4, except the device is pulsed at duty cycle of 1% for a pulse width of 10 s . nf = part mar king code nf nf nf top view bar denotes gate and source side nf nf nf nf top view bar denotes gate and source side nf from date code 1527 (yyww), this changes to : nf top view dot denotes drain side nf nf nf
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated electrical characteristics (@ t a = +25c, unless oth erwise specified.) characteristic symbol min typ max unit test condition off characteristics drain - source breakdown voltage bv dss 30 gs = 0v, i d = 10 a dss ds = 30 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics gate threshold voltage v gs(th) 0.45 ds = v gs , i d = 250 a ds( on ) m gs = 4. 5 v, i d = 2 00ma 560 v gs = 2.5v, i d = 10 0ma 730 v gs = 1.8v, i d = 75 ma forward transfer admittance |y fs | 40 ds = 3 v, i d = 10 ma diode forward voltage (note 8 ) v sd gs = 0v, i s = 300 ma dynamic characteristic s (note 9 ) input capacitance c iss ds = 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g gs = 4.5 v, v ds = 15 v, i d = 1a gate - source charge q gs gd d(on) ds = 1 0 v, i d = 1 a v g s = 10 v, r g = 6 r d(off) f notes: 8 . measured under pulsed conditions to minimize self - heating effect. pulse width ? 300 s; duty cycle ? 2% 9 . for design aid only, not subject to production testing. 0 1 2 3 4 5 fig. 1 typical output characteristic v , drain-source voltage (v) ds 0 0.5 1.0 1.5 2.0 i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 4.5v gs v = 10v gs 0 0.5 1.0 1.5 i , d r a i n c u r r e n t ( a ) d 2.0 0 0.5 1 1.5 2 2.5 3 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 5v ds
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated 0 0.4 0.8 1.2 1.6 2 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 2.5v gs v = 1.8v gs 0 0.25 0.5 0.75 1 1.25 1.5 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = 4.5v i = 1.0a gs d v = 2.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 1 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd 0 0.4 0.8 1.2 1.6 2.0 i , s o u r c e c u r r e n t ( a ) s t = 25c a fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0 0.2 0.4 0.6 0.8 1.0 1.2 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250a d i = 1ma d
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated 0 5 10 15 20 25 30 fig. 9 typical total capacitance v , drain-source voltage (v) ds 1 10 100 c , c a p a c i t a n c e ( p f ) c iss c rss c oss f = 1mhz 1 10 100 1,000 10,000 0 5 10 15 20 25 30 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a 0 2 4 6 8 0 0.5 1 1.5 2 2.5 3 fig. 11 gate-charge characteristics q , total gate charge (nc) g v , g a t e - s o u r c e v o l t a g e ( v ) g s v = 15v i = 1a ds d 0.001 0.01 0.1 1 10 100 1,000 fig. 12 transient thermal response t , pulse duration time (s) 1 0.00001 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 253c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://w ww.diodes.com/datasheets/ap02001 .pdf for the latest version. x 2 - dfn1006 - 3 dim min max typ a ? ? a1 0 .00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.05 1.00 e 0.55 0.65 0.60 e - - 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 - - 0.40 z 0.02 0.08 0.05 all dimensions in mm dimensions value (in mm) c 0.70 g1 0.3 0 g2 0.2 0 x 0. 40 x1 1.10 y 0. 25 y1 0.7 0 l3 l1 l2 e b d e a z b2 a1 seating plane pin #1 id c y1 x1 x g2 y g1
dmn3730ufb4 document number: ds 35017 rev. 8 - 2 7 of 7 www.diodes.com may 2015 ? diodes incorporated dmn 3730 ufb 4 a product line of diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this doc ument, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modificat ions, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assume all risks of such u se and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any pr oducts purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless again st all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united s tates, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple langua ges for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any comp onent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in th e safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporate d products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its re presentatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated www.diodes.com
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