2008. 9. 8 1/2 semiconductor technical data pg05bausm tvs diode for esd protection in portable electronics revision no : 3 protection in portable electronics applications. features h transient protection for data lines to iec 61000-4-2(esd) 15kv(air), 8kv(contact) h small package for use in portable electronics. h suitable replacement for multi-layer varistors in esd protection applications. h protects one i/o or power line. h low clamping voltage. h low leakage current. applications h cell phone handsets and accessories. h microprocessor based equipment. h personal digital assistants (pda s) h notebooks, desktops, & servers. h portable instrumentation. h pagers peripherals. maximum rating (ta=25 ? ) dim millimeters a b d e usm 2.00 0.20 1.25 0.15 0.90 0.10 0.3+0.10/-0.05 2.10 0.20 0.65 0.15+0.1/-0.06 1.30 0.00~0.10 0.70 c g h j k l k 1 3 2 e b d a j g c l h mm n n m 0.42 0.10 n 0.10 min p 0.1 max + _ + _ + _ + _ + _ p 1. (tvs) d1 cathode 2. (tvs) d2 cathode 3. common anode electrical characteristics (ta=25 ? ) characteristic symbol rating unit total power dissipation p pk 200 mw junction temperature t j 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse stand-off voltage v rwm - - - 5 v reverse breakdown voltage v br i t =5ma 6.46 - 7.14 v reverse leakage current i r v rwm =5v - - 0.5 a junction capacitance c j v r =0v, f=1mhz - 3 - pf 21 3 d 2 d 1 ba type name marking lot no.
2008. 9. 8 2/2 pg05bausm revision no : 3 non-repetitive peak pulse power vs. pulse time pulse duration t p ( s) 1 100 10 peak pulse power p p p (w) 10 100 1k peak pulse power 8/20us average power waveform parameters : tr=8 s e -t td=20 s td=lpp/2 rated power or i pp (%) 0 110 70 50 25 0 power deration curve 75 100 125 150 10 20 30 40 80 90 50 100 60 ambient temperature ta ( c) peak pulse current i pp (%) 0 110 70 10 5 0 time ( s) pulse waveform 15 20 25 30 10 20 30 40 80 90 50 100 60 capacitance c j (pf) 0 2 1 0 reverse voltage v r (v) c j - v r 345 1 2 4 3
|
