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profet ? BTS307 data s heet 1 2013 - 10 - 10 + v bb in st signal gnd esd profet ? out gnd logic voltage sensor voltage source open load detection short circuit detection charge pump level shifter temperature sensor rectifier limit for unclamped ind. loads gate protection current limit 2 4 1 3 5 load gnd load v logic overvoltage protection smart high - s ide power switch features ? overload protection ? current limitation ? short circuit protection ? thermal shutdown ? overvolt age protection ? fast demagnetization of inductive loads ? reverse battery protection 1 ) ? open drain diagnostic output ? open load detection in off - state ? cmos compatible input ? loss of ground and loss of v bb protectio n ? e lectro s tatic d ischarge ( esd ) protection ? green product (rohs compliant) ? aec qualified application ? ? c compatible power switch with diagnostic feedback for 12 v and 24 v dc grounded loads ? most suitable for inducti ve loads ? replaces electromechanical relays, fuses and discrete circuits general description n channel vertical power fet with charge pump, ground referenced cmos compatible input and diagnostic feedback, monolithically integrated in smart sipmos ? 1 ) with external current limit (e.g. resistor r gnd =150 ? ) in gnd connection, resistor in series with s t connection, reverse load current limited by connected load. product summary overvoltage protection v bb(az) 65 v operating voltage v bb(on) 5.8 ... 58 v on - state resistance r on 250 m ? load current (iso) i l(iso) 1.7 a pg - to263 - 5 - 2
BTS307 d ata s heet 2 2013 - 10 - 10 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 3 ) v bb 65 v su p ply voltage for short circuit protection 2 ) t j start = - 40 ...+150c v bb 40 v load current (short circuit current, see page 4 ) i l self - limited a operating temperature range storage temperature range t j t stg - 40 ...+150 - 55 ...+150 c p ower dissipation (dc), t c ? 25 c p tot 50 w electrostatic discharge capability (esd) in, st: (human body model) all other pins: v esd 1.0 tbd (>1.0) kv input voltage (dc) v in - 0.5 ... +36 v current through input pin (dc) current through status pin (dc) see internal circuit dia grams page 5 i in i st ? 2.0 ? 5.0 ma thermal characteristics parameter and conditions symbol values unit min typ max thermal resistance chip - case: junctio n - ambient (free air): r thjc r thja -- -- -- -- 2.5 75 k/w 2 ) status fault signal in case of short to gnd. internal thermal shutdown after several milliseconds. external shutdown in response to the status fault signal in less than about 1 ms necessary, if the device is used with higher v bb . pin symbol function 1 gnd - logic ground 2 in i input, activates the power switch in case of logical high signal 3 v bb + positive power supply voltage, the tab is shorte d to this pin 4 st s diagnostic feedback 5 out (load, l) o output to the load
BTS307 d ata s heet 3 2013 - 10 - 10 electrical characteristics parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on - s tate resistance (pin 3 to 5) i l = 2 a, v bb = 24 v t j =25 c: t j =150 c: r on -- 220 390 250 500 m ? nominal load current, iso norm (pin 3 to 5) v on = 0.5 v, t c = 85 c i l(iso) 1.4 1.7 -- a output current (pin 5 ) while gnd disconnected or gnd pulled up, v bb =32 v, v in = 0, see diagram page 6 i l(gndhigh) -- -- 1.1 ma turn - on time to 90% v out : turn - off time to 10% v out : r l = 12 ? , v bb = 20v, t j = - 40...+150c t on t off 15 20 -- -- 80 70 ? s slew rate on, 10 to 30% v out , r l = 12 ? , v bb = 20v, t j = - 40...+150c d v /dt on -- -- 6 v / ? s slew rate off, 10 to 30% v out , r l = 12 ? , v b b = 20v, t j = - 40...+150c - d v /dt off -- -- 7 v / ? s operating parameters operating voltage 3 ) t j = - 40...+150c: v bb(on) 5.8 -- 58 v undervoltage shutdown t j = - 40...+150c: v bb(under) 2.7 -- 4.7 v undervoltage restart t j = - 40...+150c: v bb(u rst ) -- -- 4.9 v undervoltage restart of charge pump see diagram page 10 t j = - 40...+150c: v bb(ucp) -- 5.6 7.5 v undervoltage hysteresis ? v bb(under) = v bb(u rst) - v bb(under) ? v bb(under) -- 0.4 -- v overvoltage protection 4 ) t j = - 40...+150c: i bb =40 ma v bb(az) 65 70 -- v standby current (pin 3) , v in =0 t j = - 40...+150c: i bb(off) -- 10 50 ? a operating current (pin 1) 5 ) , v in =5 v i gnd -- 2.2 -- ma 3 ) at supply voltage increase up to v bb = 5.6 v typ without charge pump, v out ? v bb - 2 v 4 ) see also v on(cl) in table of protection functions and circuit diagram page 6 . 5 ) add i st , if i st > 0, add i in , if v in >5.5 v
BTS307 d ata s heet 4 2013 - 10 - 10 parameter and conditions symbol values unit at t j = 25 c, v bb = 12 v unl ess otherwise specified min typ max protection functions 6 ) initial peak short circuit current limit (pin 3 to 5) i l(scp) t j = - 40c: t j =25c: t j =+150c: -- -- 4.0 -- 10 -- 19 -- -- a output clamp (inductive load switch off) at v out = v bb - v o n(cl) i l = 1 a, t j = - 40..+150c: v on(cl) 59 -- 75 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 3 to 1) 7 ) - v bb -- -- 32 v diagnostic characteristics open load detection current (included in standby current i bb(off) ) i l(off) -- 6 -- ? a open load detection voltage t j = - 40..150c: v out(ol) 2.4 3 4 v shor t circuit detection voltage (pin 3 to 5) v on(sc) -- 2.5 -- v input and status feedback 8 ) input resistance see circuit page 5 r i -- 20 -- k ? input turn - on threshold voltage v in(t+) 1 -- 2.5 v input turn - off threshold v oltage v in(t - ) 0.8 -- -- v input threshold hysteresis ? v in(t) -- 0.5 -- v ? off state input current (pin 2), v in = 0.4 v i in(off) 1 -- 30 ? a on state input current (pin 2), v in = 3.5? v i in(on) 10 25 70 ? a delay time for status with open load aft er input neg. slope (see diagram page 10 ) t d(st ol3) -- 200 -- ? s status output (open drain) zener limit voltage t j = - 40...+150c, i st = +1.6 ma: st low voltage t j = - 40...+150c, i st = +1.6 ma: v st(high) v st(low) 5.4 -- 6.1 -- -- 0.4 v 6 ) integrated protection functions are designed to prevent ic dest ruction under fault conditions described in the data sheet. fault conditions are considered as "outside" normal operating range. protection functions are not designed for continuous repetitive operation. 7 ) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain - source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain - source diode . the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 2 and circuit page 6 ). 8 ) if a ground resistor r gnd is used, add t he voltage drop across this resistor.
BTS307 d ata s heet 5 2013 - 10 - 10 truth table input - output status level level bts 307 normal operation l h l h l h open load l h 9 ) h h h short circuit to gnd l h l l l l short circuit to v bb l h h h h h over tem - perature l h l l l l under - voltage l h l l l l over voltage no overvoltage shutdown, see normal operation l = "low" level x = don't care z = high impedance, potential depends on external circuit h = "high" level status signal after the time delay shown in the diagrams (see fig 5. page 10 ) 9 ) power transistor off, high impedance, internal pull up current source for open load detection. terms input circuit (esd protection) esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). status output esd - zener diode: 6.1 v typ., max 5 ma; r st(on) < 0 ? at 1.6 ma, esd zener diodes are not to be used as voltage clamp at dc conditions. operation in this mode may result in a drift of the zener voltage (increase of up to 1 v). short circuit detection fault signal at st - pin: v on > 2.5 v typ, no switch off by the profet itself, external switch off recommended! profet v in st out gnd bb v st v in i st i in v bb i bb i l v out i gnd v on 1 2 4 3 5 r gnd in gnd i r esd-zd i i i st gnd esd- zd +5v r st(on) short circuit detection logic unit + v bb out v on
BTS307 d ata s heet 6 2013 - 10 - 10 inductive and overvoltage output clamp v on clamped to -- v typ. overvolt. and reverse batt. protection v z1 = 6.2 v typ., v z2 = 70 v typ., r gnd = 150 ? , r st = 15 k ? , r i = 20 k ? typ. open - load de tection off - state diagnostic condition: v out > 3 v typ.; in low gnd disconnect for v bb =24v and v in =0v: v st >2.8v @ i st ? ? if pulled up as shown. any kind of load. in case of input=high is v out ? v in - v in(t+) . gnd disconnect with gnd pull up any kind of load. if v gnd > v in - v in(t+) device stays off due to v gnd >0, no v st = low signal available. v bb disconnect with energized inductive load normal load current can be handled by the profet itself. + v bb out gnd p r ofe t v z v on + v bb in st st r in r gnd gnd r signal gnd logic p r o fe t v z2 i r v z1 open load detection logic unit v out signal gnd i l(ol) off profet v in st out gnd bb v bb 1 2 4 3 5 v in v st v gnd +5v 12k profet v in st out gnd bb v bb 1 2 4 3 5 v gnd v in v st profet v in st out gnd bb v bb 1 2 4 3 5 high
BTS307 d ata s heet 7 2013 - 10 - 10 v bb disconnect with charged external inductive lo ad if other external inductive loads l are connected to the profet, additional elements like d are necessary. inductive load switch - off energy dissipation energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = ? on(cl) i l (t) dt, with an approximate solution for r l ? 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out ( cl ) | ) profet v in st out gnd bb 1 2 4 3 5 v bb high s d profet v in st out gnd bb = e e e e as bb l r e load l r l { z l
BTS307 d ata s heet 8 2013 - 10 - 10 options overview all versions: high - side switch, input protection, esd protection and reverse battery protection with 150 ? type bts 410d2 410e2 410g2 410h2 307 308 logic version d e g h overtemperature protection with hysteresis t j >150 c, latch function 10 ) 11 ) t j >150 c, with auto - restart on cooling x x x x x x short circuit to gnd protection switches off when v on >3.5 v typ. and v bb > 8 v typ 10 ) (when first turned on after approx. 150 ? s) x x switches off when v on >8.5 v typ. 10 ) (when first turned on after approx. 150 ? s) achieved through overtemperature protection x x x x open load detection in off - state with sensing current 6 ? a typ. in on - state with sensing voltage drop across powe r transistor x x x x x x undervoltage shutdown with auto restart x x x x x x overvoltage shutdown with auto restart x x x x - x status feedback for overtemperature short circuit to gnd short to v bb open load undervoltage overvoltage x x - 12 ) x x x x x - 12 ) x - - x - - 12 ) x - - x x x x - - x x x x x - x x x x - - status output type cmos open drain x x x x x x output negative voltage transient limit (fast inductive load switch off) to v bb - v on(cl) x x x x x x load current limit high level (can handle loads with high inrush currents) low level (better protection of application) x x x x x x protection against loss of gnd x x x x x x 10 ) latch except when v bb - v out < v on(sc) after shutdown. in most cases v out = 0 v after shutdown ( v out ? 0 v only if f orced externally). so the device remains latched unless v bb < v on(sc) (see page 4 ). no latch between turn on and t d(sc) . 11 ) with latch function. reseted by a) input low, b) undervoltage, c) overvoltage 12 ) low resistance short v b b to output may be detected in on - state by the no - load - detection
BTS307 d ata s heet 9 2013 - 10 - 10 timing diagrams figure 1 a : v bb turn on, : in case of too early v in =high the device may not turn on (curve a) t d(bb in) approx. 150 ? s figure 2 a : switching an inductive load, figure 3 a : short circuit: shut down by overtempertature, reset by cooling heating up requires several milliseconds, depending on extern al conditions. external shutdown in response to status fault signal recommended. figure 4 a : overtemperature: reset if t j < t jt in v out t v bb st open drain a a d(bb in) t in st out l t v i in st l t i l(scr) i i l(scp) v out output short to gnd normal operation in st out j t v t
BTS307 d ata s heet 10 2013 - 10 - 10 figure 5 a : open load, : detection in off - state, turn on/ off to open load t d(st,ol3) depends on external circuitry because of high impedance *) i l = 6 ? a typ figure 5 b : open load, : detection in off - state, open load occurs in off - state *) i l = 6 ? a typ figure 6 a : undervoltage: figure 6 b : undervoltage restart of charge pump charge pump starts at v bb(ucp) =5.6 v typ. in st out l t v i open normal t d(st ol3) *) in st out l t v i open normal normal *) *) out(ol) v in v out t v bb st open drain v v bb(under) bb(u rst) bb(u cp) v bb(under) v v bb(u rst) v bb(u cp) off-state on-state v bb v on
BTS307 d ata s heet 11 2013 - 10 - 10 figure 7 a : overvoltage, no shut down: in v out t v bb st on(cl) v out(ol) v
BTS307 d ata s heet 12 2013 - 10 - 10 package and ordering code all dimensions in mm pg - to263 - 5 - 2 ordering code BTS307 e3062a sp001104812 published by infineon technologies ag , d - 81726 mnchen ? infineon technologies ag 201 all rights res erved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, in cluding but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or systems with the express written approval of infineon technologies, if a failure of such component s can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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