q?v~zy??q?v?_ra]?????qcabgq hfp5n60f_hfs5n60f absolute maximum ratings t c =25 e unless otherwise specified hfp5n60f / hfs5n60f 600v n-channel mosfet oct 2016 parameter value unit bv dss 600 v i d 5a r ds(on), typ 1.8
qg ,typ 12.5 nc key parameters features symbol parameter to-220 to-220f unit v dss drain-source voltage 600 v i d drain current ? continuous (t c = 25 e ) 5.0 5.0 * a drain current ? continuous (t c = 100 e ) 3.2 3.2 * a i dm drain current ? pulsed (note 1) 20 20 * a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 110 mj i ar avalanche current (note 1) 5.0 a e ar repetitive avalanche energy (note 1) 12.5 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 125 42 w 1.0 0.32 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e symbol parameter to-220 to-220f unit r jc thermal resistance, junction-to-case, max. 1.0 3.0 e /w r cs thermal resistance, case-to-sink, typ. 0.5 -- e /w r ja thermal resistance, junction-to-ambient, max. 62.5 62.5 e /w * drain current limited by maximum junction temperature thermal resistance characteristics hfp5n60f to-220 hfs5n60f to-220f symbol g d s g d s ? originative new design ? very low intrinsic capacitances ? excellent switching characteristics ? 100% avalanche tested ? rohs compliant
q?v~zy??q?v?_ra]?????qcabgq hfp5n60f_hfs5n60f symbol parameter test conditions min typ max unit on characteristics v gs gate threshold voltage v ds = v gs , i d $ 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 2.5 a -- 1.8 2.3 ? g fs forward transconductance v ds = 30 v i d = 2.5 a -- 3 -- s off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d $ 600 -- -- v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v -- -- 10 $ v ds = 480 v, t c = 125 e -- -- 100 $ i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 na dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 560 730 pf c oss output capacitance -- 70 90 pf c rss reverse transfer capacitance -- 14 18.5 pf switching characteristics t d(on) turn-on time v ds = 300 v, i d = 5 a, r g = 25 ? (note 4,5) -- 19 48 ns t r turn-on rise time -- 19 48 ns t d(off) turn-off delay time -- 35 80 ns t f turn-off fall time -- 22 54 ns q g total gate charge v ds = 480 v, i d = 5 a, v gs = 10 v (note 4,5) -- 12.5 16.5 nc q gs gate-source charge -- 2.8 -- nc q gd gate-drain charge -- 4.0 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 5 a i sm maximum pulsed drain-source diode forward current -- -- 20 v sd drain-source diode forward voltage v gs = 0 v, i s = 5 a -- -- 1.4 v trr reverse recovery time v gs = 0 v, i s = 5 a di f g w $ v -- 250 -- ns qrr reverse recovery charge -- 1.6 -- & notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=8mh, i as =5a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ g l g w ? $ v 9 dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & |