sop8 jiangsu changjiang electronics technology co., ltd sop8 plastic-encapsulate mosfets CJQ4435 p-channel power m o sfet description the CJQ4435 uses advanced trench te chno log y to provide excellent r ds( on) , shoot-through immunity , bod y diode c haracteristics and ultra-low gate resistance. this device is ideally suited for use as a low side switch in notebook cpu core power conversion. ap p li c ations z battery switch z loa d switch marking q4435= device code solid dot=pin1 indicator solid dot = green molding compound device, if none, the normal device front side yy=date code maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltag e v gs 20 v continuous dr ain cu rrent i d -9.1 a pulsed drai n cu rrent i dm -36 a single pulsed avalan che e nergy e as (1) 20 mj powe r dissi p ation p d 1.4 w thermal resistance from jun ction to ambie n t r ja 89 /w junction t emperature t j 150 storage temperature r an g e t stg -55 ~+ 150 lead te mperature for solderi ng purp oses(1/8?? from case for 10s) t l 260 (1).e as condition: v dd =-50v,l =0 .5mh, r g =25 ? , starting t j = 25c 12 3 4 56 78 sg dd d d s s www.cj-elec.com 1 f , ma r ,201 6 equivalent circuit v (br)dss r ds(on) max i d - 30v 24 -9.1a m @ -10v ? 35 m @ - 4.5 v ?
parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -30 v zero gate voltage drain current i dss v ds =-30v, v gs =0v -1 a gate-body leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (note1) gate-threshold voltage v gs(th) v ds =v gs , i d =-250a -1.0 -1.5 -3.0 v v gs =-10v, i d =-9.1a 14 24 m ? static drain-source on-sate resistance r ds(on) v gs =-4.5v, i d =-6.9a 23 35 m ? forward transconductance g fs v ds =-10v, i d =-9.1a 20 s dynamic characteristics (note 2) input capacitance c iss 1350 output capacitance c oss 215 reverse transfer capacitance c rss v ds =-15v,v gs =0v, f =1mhz 185 pf switching characteristics (note 2) v ds =-15v, v gs =-10v, i d =-9.1a 50 total gate charge q g 25 gate-source charge q gs 4 gate-drain charge q gd v ds =-15v, v gs =-4.5v, i d =-9.1a 7.5 nc turn-on delay time t d (on) 15 turn-on rise time t r 15 turn-off delay time t d(off) 70 turn-off fall time t f v dd =-15v,i d =-1a, v gs =-10v,r g =1 ? , r l =15 ? 25 ns gate resistance r g f =1mhz, v ds =0v, v gs =0v, 5.8 ? drain-source diode characteristics drain-source diode forward voltage(note1) v sd v gs =0v, i s =-2a -1.2 v continuous drain-source diode forward current i s -9.1 a pulsed drain-source diode forward current i sm -36 a notes: 1. pulse test : pulse width 300s, duty cycle 2%. 2. guaranteed by design, not su bject to production testing. www.cj-elec.com 2 f,mar,2016 0 2 6 ) ( 7 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 a t =25 / unless otherwise specified
typical characteristics -0 -2 -4 -6 -8 -10 0 20 40 60 80 25 50 75 100 125 -1.2 -1.3 -1.4 -1.5 -1.6 -0 -2 -4 -6 -8 -10 -0 -6 -12 -18 -24 -0 -2 -4 -6 -8 -10 0 20 40 60 80 -0.2 -0.4 -0.6 -0.8 -1.0 -1e-3 -0.01 -0.1 -1 -0 -1 -2 -3 -4 -0 -6 -12 -18 -24 v gs =-4.5v v gs =-10v i d ?? r ds(on) ta=25 pulsed on-resistance r ds(on) (m ) drain current i d (a) threshold voltage i d =-250ua threshold voltage v th (v) junction temperature t j ( ) v gs =-2.5v v gs =-3v,-3.5v,-4v,-4.5v v gs =-2v ta=25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =-9.1a ta=25 pulsed v gs ?? r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) -2 v sd i s ?? ta=25 pulsed source current i s (a) source to drain voltage v sd (v) v ds =-10v ta=25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) www.cj-elec.com 3 f,mar,2016
www.cj-elec.com 4 f,mar,2016 sop8 package outline dimensions sop8 suggested pad layout mi n max mi n max a a1 0.100 0.250 0.004 0.010 a2 1.3 50 1.5 5 0 0.053 0.0 61 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 d 4.800 5.000 0.189 0.197 e e 5.800 6.200 0.228 0.244 e1 3.800 4.000 0.150 0.157 l 0.400 1.270 0.016 0.050 0 8 0 8 sy m bo l dimensions in millimeters dimensions in inches 0.050bsc 1.270bsc 1.350 1.750 0.053 0.069
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