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| 2014. 3. 31 1/2 semiconductor technical data kds221e silicon epitaxial planar diode revision no : 1 ultra high speed switching application. features h small package : esm. h low forward voltage : v f =1.0v (max.). maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit maximum (peak) reverse voltage v rm 20 v reverse voltage v r 20 v maximum (peak) forward current i fm 200 * ma average forward current i o 100 * ma surge current (1 s) i fsm 300 * ma power dissipation p d 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? note : * unit rating. total rating=unit rating x 0.7 characteristic symbol test condition min. typ. max. unit forward voltage v f i f =10ma - - 1.0 v reverse current i r v r =15v - - 0.1 a
2014. 3. 31 2/2 kds221e revision no : 1 |
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