? semiconductor components industries, llc, 2015 september, 2016 ? rev. 10 1 publication order number: murd320/d murd320, nrvud320, surd8320 switch-mode power rectifier dpak surface mount package these state?of?the?art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? ultrafast 35 nanosecond recovery time ? low forward voltage drop ? low leakage ? nrvud, surd8 prefixes for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant* mechanical characteristics ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds ? esd ratings: ? machine model = c (> 400 v) ? human body model = 3b (> 8 kv) maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 200 v average rectified forward current (rated v r , t c = 158 c) i f(av) 3.0 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 158 c) i frm 6.0 a non?repetitive peak surge current (surge applied at rated load conditions halfwave, 60 hz) i fsm 75 a operating junction and storage temperature range t j , t stg ?65 to +175 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. ultrafast rectifier 3.0 amperes, 200 volts 4 1 3 www. onsemi.com dpak case 369c marking diagram a = assembly location y = year ww = work week g = pb?free package ayww u 320g device package shipping ? ordering information murd320t4g dpak (pb?free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. NRVUD320VT4G dpak (pb?free) 2500 / tape & reel nrvud320w1t4g dpak (pb?free) 2500 / tape & reel ayww u 320w1g style 3 murd320t4g surd8320t4g NRVUD320VT4G nrvud320w1t4g 4 1 3 style 8 surd8320t4g dpak (pb?free) 2500 / tape & reel
murd320, nrvud320, surd8320 www. onsemi.com 2 thermal characteristics characteristics symbol value unit thermal resistance ? junction?to?case r jc 6 c/w thermal resistance ? junction?to?ambient (note 1) r ja 80 c/w 1. rating applies when surface mounted on the minimum pad sizes recommended. electrical characteristics characteristics symbol value unit maximum instantaneous forward voltage drop (note 2) (i f = 3 amps, t j = 25 c) (i f = 3 amps, t j = 125 c) v f 0.95 0.75 volts maximum instantaneous reverse current (note 2) (t j = 25 c, rated dc voltage) (t j = 125 c, rated dc voltage) i r 5 500 a maximum reverse recovery time (i f = 1 amp, di/dt = 50 amps/ s, v r = 30 v, t j = 25 c) (i f = 0.5 amp, i r = 1 amp, i rec = 0.25 a, v r = 30 v, t j = 25 c) t rr 35 25 ns product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width = 300 s, duty cycle 2.0%. figure 1. typical forward voltage v f, instantaneous voltage (volts) 0 0.6 0.2 0.8 30 0.1 0.3 0.2 2.0 1.0 100 20 7.0 3.0 0.5 5.0 50 , instantaneous forward current (amps) f 1.4 v r , reverse voltage (volts) 060 40 100 120 40 80 0.008 0.004 0.002 0.8 0.4 0.2 20 4.0 2.0 8.0 t j = 175 c i r 20 80 200 figure 2. typical reverse current* i f(av) , average forward current (amps) 0 3.0 2.0 0 2.0 1.0 3.0 5.0 4.0 14 7.0 6.0 p 1.0 10 figure 3. average power dissipation 0.4 0.7 10 70 1.0 1.2 100 c t j = 25 c 175 c 160 180 140 0.08 0.04 0.02 , reverse current ( a) 100 c 25 c 6.0 5.0 4.0 9.0 8.0 7.0 9.0 8.0 * the curves shown are typical for the highest voltage device in the voltage grouping. typical reverse current for lower voltage selections can be estimated from these curves if v r is sufficiently below rated v r . i 150 c 11 10 13 12 , average power dissipation (watts) f(av) t j = 175 c i pk /i av = 20 sine wave square wave dc 10 5.0 150 c
murd320, nrvud320, surd8320 www. onsemi.com 3 t c , case temperature ( c) 100 1.0 2.0 3.0 4.0 5.0 i f(av) 0 6.0 7.0 8.0 110 120 130 140 150 160 170 180 figure 4. current derating, case 020 1.0 1.5 2.5 3.5 4.0 0 40 60 80 100 t a , ambient temperature ( c) i f(av) figure 5. current derating, ambient rated voltage applied r jc = 6 c/w , average forward current (amps) sine wave or square wave dc , average forward current (amps) t j = 175 c 120 140 160 180 200 0.5 2.0 3.0 sine wave or square wave surface mounted on min. pad size recommended rated voltage applied r ja = 80 c/w dc t j = 175 c v r , reverse voltage (volts) 010 3040 300 500 10 100 50 200 20 100 figure 6. typical capacitance 60 50 30 20 c, capacitance (pf) t j = 25 c 1000 70 80 90
murd320, nrvud320, surd8320 www. onsemi.com 4 package dimensions dpak (single gauge) case 369c issue f 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 8: pin 1. n/c 2. cathode 3. anode 4. cathode style 3: pin 1. anode 2. cathode 3. anode 4. cathode b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 murd320/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ?
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