RGPZ10BM40FH 430v 20a ignition igbt operating junction temperature t j ? 40 to +175 c storage temperature t stg ? 55 to +175 c power dissipation p d 107 w 250 avalanche energy (single pulse) t j = 25c e as mj t j = 150c e as *2 150 mj ? outline bv ces 430? 30v to-252 i c 20a v ce(sat) (typ.) 1.6v e as 250mj ? features ? inner circuit 1) low collector - emitter saturation voltage 2) high self-clamped inductive switching energy 3) built in gate-emitter protection diode 4) qualified to aec-q101 5) pb - free lead plating ; rohs compliant ? packaging specifications type packaging taping ? applications reel size (mm) 330 ignition coil driver circuits tape width (mm) 16 solenoid driver circuits basic ordering unit (pcs) 2,500 packing code tl marking rgpz10bm40 ? absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit collector - emitter voltage v ces 460 v emitter-collector voltage (v ge = 0v) v ec 25 v gate - emitter voltage collector current v ge ? 10 v i c 20 a (1) (2) (3) (1) gate (2) collector (3) emitter (1) (2) (3) 1/8 2015.10 - rev.a datasheet www.rohm.com ? 2015 rohm co., ltd. all rights reserved.
RGPZ10BM40FH ? thermal resistance ? electrical characteristics (at t j = 25c unless otherwise specified) - 1.60 2.00 v t j = 150c - 1.80 - v - 1.3 - v i c = 10a, v ge = 5v t j = 25c 1.3 1.7 2.1 v a 35 - v i g = r 5ma, v ce = 0v r 12 - 17 v 25 collector - emitter saturation voltage v ce(sat) i c = 2ma, v ge = 0v t j = 25c t j = 40 to 175c *2 i c = 10ma, v ge = 0v v ce = 300v, v ge = 0v v ge = r 10v, v ce = 0v v ce = 5v, i c = 10ma t j = 150c t j = 25c collector cut - off current i ces gate - emitter leakage current i ges gate - emitter threshold voltage v ge(th) t j = 150c *2 gate - emitter breakdown voltage bv ges collector - emitter breakdown voltage bv ces emitter - collector breakdown voltage bv ec 400 430 460 v 395 - 465 v - - 100 a -- r 15 a t j = 25c --7 conditions values unit min. typ. max. unit min. typ. max. parameter symbol values parameter c/w thermal resistance junction - case r (j-c) - - 1.40 symbol 2/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? electrical characteristics (at t j = 25c unless otherwise specified) *1) assurance items according to our measurement definition (fig.16) *2) design assurance items 2.10 v t j = 150c - 1.90 - v 150 - - mj 0.23 - t j = 150c *2 s pf 250 - - gate series resistance r g 70 100 130 ? s turn - off delay time *1 t d(off) - 1.5 - fall time *1 t f - 3.9 - - 0.16 - rise time *1 t r - v total gate charge q g v ce = 15v, i c = 10a, v ge = 5v -14-nc - 1.13 - collector - emitter saturation voltage v ce(sat) t j = 150c collector - emitter saturation voltage v ce(sat) i c = 10a, v ge = 4v t j = 25c - 1.70 mj turn - on delay time *1 t d(on) turn - off delay time *1,*2 t d(off) 0.8 1.3 4.0 i c = 8a, v cc = 300v, v ge = 5v, r g = 100?, l=5mh, t j =150c t j = 25c avalanche energy (single pulse) e as l = 5mh, v ge = 5v, v cc = 30v, r g = 1k?, t r 0.10 0.18 0.50 i c = 8a, v cc = 300v, v ge = 5v, r g = 100?, l=5mh, t j =25c turn - on delay time *1,*2 t d(on) fall time *1,*2 t f 1.4 2.4 6.0 rise time *1,*2 input capacitance c ies v ce = 10v - 1000 - 0.09 0.17 0.50 output capacitance c oes v ge = 0v - 175 - reverse transfer capacitance c res f = 1mhz - 55 - parameter symbol conditions values unit min. typ. max. t j = 25c - 1.17 1.50 i c = 4a, v ge = 4.5v v 3/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? electrical characteristic curves 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 0 25 50 75 100 125 150 175 200 i c = 10a v ge = 3.5v 4v 4.5v 8v 10v 5v 1 1.1 1.2 1.3 1.4 1.5 0 25 50 75 100 125 150 175 200 i c = 5a v ge = 3.5v 4v 4.5v 8v 10v 5v fig.1 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.2 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.3 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] fig.4 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 5 10 15 20 25 30 012345 t j = 25oc t j = 25oc v ge = 10v v ge = 8v v ge = 4.5v v ge = 4v v ge = 3.5v v ge = 5v 0 5 10 15 20 25 30 012345 t j = 25oc t j = 175oc v ge = 10v v ge = 8v v ge = 4.5v v ge = 4v v ge = 3.5v v ge = 5v 4/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? electrical characteristic curves 0 0.5 1 1.5 2 2.5 0 25 50 75 100 125 150 175 200 v ge = 5v i c = 10a i c = 1a i c = 4.5a 0 5 10 15 20 012345 v ce = 5v t j = 25oc t j = 175oc 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 -50 -25 0 25 50 75 100 125 150 175 200 v ce = 5v i c = 10ma 0.01 0.1 1 10 100 1000 10000 -50 -25 0 25 50 75 100 125 150 175 200 v ec = 25v v ces = 300v fig.8 typical leakage current vs. junction temperature leakage current : i ces /i ec [ ? a] junction temperature : t j [oc] fig.6 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.5 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] fig.7 typical gate to emitter threshold voltage vs. junction temperature gate to emitter threshold voltage : v ge (th) [v] junction temperature : t j [oc] 5/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? electrical characteristic curves fig.9 typical collector to emitter breakdown voltage vs. junction temperature collector to emitter breakdown voltage : bv ces [v] junction temperature : t j [oc] fig.10 typical self clamped inductive switching current vs. inductance self clamped inductive switching current : i as [a] inductance : l [mh] fig.12 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.11 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 400 410 420 430 440 450 460 -50 -25 0 25 50 75 100 125 150 175 200 v ge = 0v i ces = 2ma 0 1 2 3 4 5 0 5 10 15 v cc = 12v i c = 10a t j = 25oc 1 10 100 1000 10000 0.01 0.1 1 10 100 f= 1mhz v ge = 0v t j = 25oc cies coes cres 0 5 10 15 20 25 30 35 40 012345678910 v cc = 30v v ge = 5v r g = 1k ? 6/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? electrical characteristic curves 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.3 single pulse 0.01 0.02 0.05 fig.14 transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc t c switching time [ s] junction temperature : t j [oc] fig.13 typical switching time vs. junction temperature c1 c2 c3 r1 r2 r3 1.472m 983.8u 3.844m 391.6m 985.3m 23.10m 0.1 1 10 0 25 50 75 100 125 150 175 200 v cc = 30v, i c = 8a, v ge = 5v, l= 5mh, r g = 100
t f t d(off) t r t d(on) 7/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
RGPZ10BM40FH ? inductive load switching circuit and waveform ? self clamped inductive switching circuit and waveform vg d.u.t. fig.15 inductive load switching circuit fig.17 self clamped inductive switching circuit fig.16 inductive load switching waveform fig.18 self clamped inductive switching waveform e as v ce(sat) i c v ce v cc v clamp t r t of f 10% 90% t f t d(on) t d(off) gate drive time v ce ( sat ) 10% 90% t on v ge i c v ce vg d.u.t. 8/8 2015.10 - rev.a www.rohm.com ? 2015 rohm co., ltd. all rights reserved. data sheet
r1102 a www.rohm.com ? 201 5 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representative and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) 14)
datasheet part number RGPZ10BM40FH package to-252 unit quantity 2500 minimum package quantity 2500 packing type taping constitution materials list inquiry rohs yes RGPZ10BM40FH - web page distribution inventory
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