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datasheet www.rohm.com ? 2013 rohm co., ltd. all rights reserved. r6012fnj nch 600v 12a power mosfet 4) drive circuits can be simple. 2) fast switching speed. tape width (mm) 24 3) gate-source voltage (v gss ) guaranteed to be ? 30v. l application reel size (mm) 6) pb-free lead plating ; rohs compliant taping 330 type packaging 1,000 taping code 600v 0.51 w 50w 12a 5) parallel use is easy. v dss r ds(on) (max.) i d p d 1) low on-resistance. l outline l inner circuit l packaging specifications lpt(s) (sc-83) v gss ? 48 continuous drain current basic ordering unit (pcs) pulsed drain current gate - source voltage parameter t c = 100c switching power supply ? 12 value t c = 25c symbol l absolute maximum ratings (t a = 25c) drain - source voltage tl marking r6012fnj l features unit 600 v dss i d *1 a v v ? 30 v/ns 150 reverse diode dv/dt i ar *3 range of storage temperature t stg power dissipation (t c = 25c) c w junction temperature a dv/dt *5 15 - 55 to + 150 i d,pulse *2 i d *1 ? 6 a a t j c mj e ar *4 avalanche energy, single pulse avalanche energy, repetitive avalanche current 6 e as *3 3.5 mj p d 50 9.6 (1) gate (2) drain (3) source * 1 body diode (2) (1) (3) 1/13 2013.04 - rev.a to-263(d2pak) downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj drain - source voltage slope dv/dt v ds = 480v, i d = 12a - typ. symbol conditions values l absolute maximum ratings l thermal resistance thermal resistance, junction - case parameter max. parameter i gss - na t j = 125c v v 1 100 ? 100 - - t j = 25c m a ma drain - source avalanche breakdown voltage - 600 conditions symbol v (br)ds - min. values typ. 100 - zero gate voltage drain current v (br)dss v gs = 0v, i d = 6a v gs = 0v, i d = 1ma i dss unit t sold r thja min. r thjc symbol - unit c/w values v/ns t j = 125c 50 - 2.5 - c - 265 c/w unit max. - 700 - - 80 gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 3 gate - source leakage current v gs = ? 30v, v ds = 0v - - v 5 thermal resistance, junction - ambient soldering temperature, wavesoldering for 10s l electrical characteristics (t a = 25c) parameter drain - source breakdown voltage v ds = 600v, v gs = 0v w gate input resistance r g f = 1mhz, open drain - 8 - static drain - source on - state resistance w t j = 25c - 0.39 0.51 t j = 125c - r ds(on) *6 v gs = 10v, i d = 6a 0.79 - 2/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj *1 limited only by maximum temperature allowed. *2 p w ? 10 m s, duty cycle ? 1% *3 l ? 500 m h, v dd = 50v, r g = 25 w , starting t j = 25c *4 l ? 500 m h, v dd = 50v, r g = 25 w , starting t j = 25c, f = 10khz *5 reference measurement circuits fig.5-1. *6 pulsed 6.6 - v gate plateau voltage v (plateau) v dd ? 300v, i d = 12a - - gate - drain charge q gd *6 parameter l gate charge characteristics (t a = 25c) rise time t r *6 i d = 6a symbol values 37 v gs = 10v - 10 - min. 35 - conditions total gate charge gate - source charge q gs *6 i d = 12a q g *6 v dd ? 300v 15 - - typ. ns 77 154 20 40 - - max. unit nc - r g = 10 w - turn - off delay time t d(off) *6 r l = 50 w - fall time t f *6 - pf - 41.9 - - 142 turn - on delay time t d(on) *6 v dd ? 300v, v gs = 10v - effective output capacitance, energy related effective output capacitance, time related c o(er) c o(tr) v gs = 0v v ds = 0v to 480v 30 1300 - g fs *6 v ds = 10v, i d = 6.0a pf - c rss f = 1mhz - 45 - 890 max. reverse transfer capacitance l electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. 8 transconductance input capacitance 3.5 output capacitance c oss v ds = 25v - - s c iss v gs = 0v - 3/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj peak reverse recovery current parameter symbol conditions values reverse recovery charge t rr *6 - - 6.9 - q rr *6 i rrm *6 i s *1 i sm *2 t c = 25c l body diode electrical characteristics (source-drain)(t a = 25c) - 0.26 - m c v sd *6 v gs = 0v, i s = 12a typ. forward voltage reverse recovery time unit min. max. inverse diode continuous, forward current inverse diode direct current, pulsed - i s = 12a di/dt = 100a/ m s 75 - - - 0.0228 k/w ws/k r th2 0.251 c th2 0.00767 0.0726 c th1 r th1 r th3 0.634 c th3 0.167 peak rate of fall of reverse recovery current di rr /dt - value l typical transient thermal characteristics 740 - symbol value unit symbol - a a/ m s - t j = 25c unit - a a 1.5 v ns 48 12 4/13 2013.04 - rev.a downloaded from: http:///
r6012fnj l electrical characteristic curves 0 20 40 60 80 100 120 0 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 1000 0.0001 0.01 1 100 t a = 25oc single pulse r th(ch-a)(t) = (t) r th(ch- a) r th(ch- a) = 80oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0.01 0.1 1 10 100 0.1 1 10 100 1000 t a =25 oc single pulse p w = 100 m s p w = 1ms p w = 10ms operation in this area is limited by r ds (on) (v gs = 10v) fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : i d [a] junction temperature : t j [ c] drain - source voltage : v ds [v] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] 5/13 2013.04 - rev.a downloaded from: http:/// www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 0 1 2 3 4 5 6 7 8 0.01 0.1 1 10 100 t a = 25oc v dd = 50v, r g = 25 w v gf = 10v, v gr = 0v 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 1.0e+04 1.0e+05 1.0e+06 t a =25oc 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 fig.4 avalanche current vs inductive load avalanche current : i ar [a] coil inductance : l [mh] fig.5 avalanche power losses avalanche power losses : p ar [w] frequency : f [hz] fig.6 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [oc] 6/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 0 2 4 6 8 10 12 0 10 20 30 40 50 t a =150oc pulsed v gs = 5.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v v gs = 10.0v v gs = 4.5v 0 1 2 3 4 5 6 0 1 2 3 4 5 t a =150oc pulsed v gs = 5.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v v gs = 10.0v v gs = 4.5v fig.7 typical output characteristics(i) fig.8 typical output characteristics(ii) fig.9 t j = 150 c typical output characteristics(i) fig.10 t j = 150 c typical output characteristics(ii) drain - source voltage : v ds [v] drain - source voltage : v ds [v] drain current : i d [a] drain current : i d [a] drain current : i d [a] drain - source voltage : v ds [v] drain current : i d [a] drain - source voltage : v ds [v] 0 5 10 15 20 0 10 20 30 40 50 t a =25oc pulsed v gs = 10.0v v gs = 5.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 5 t a =25oc pulsed v gs = 10.0v v gs = 5.5v v gs = 8.0v v gs = 7.0v v gs = 6.5v v gs = 6.0v v gs = 5.0v 7/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 500 550 600 650 700 750 800 850 900 -50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 v ds = 10 v pulsed t a = 125 oc t a = 75 oc t a = 25 oc t a = - 25 oc 2 3 4 5 -50 -25 0 25 50 75 100 125 150 v ds = 10 v i d = 1ma pulsed 0.001 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 v ds = 10 v pulsed t a = - 25 oc t a =25 oc t a =75 oc t a =125 oc fig.12 typical transfer characteristics fig.11 breakdown voltage vs. junction temperature drain - source breakdown voltage : v (br)dss [v] drain current : i d [a] fig.13 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c ] fig.14 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] junction temperature : t j [ c ] gate - source voltage : v gs [v] 8/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 0 0.2 0.4 0.6 0.8 1 0 2 4 6 8 10 12 14 16 18 20 i d = 6a i d = 12a t a =25oc pulsed 0 0.2 0.4 0.6 0.8 1 -50 -25 0 25 50 75 100 125 150 i d = 6a i d = 12a v gs = 10 v pulsed 0.1 1 0.01 0.1 1 10 100 v gs = 10 v pulsed t a =125 oc t a =75 oc t a =25 oc t a = - 25 oc fig.15 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [ w ] gate - source voltage : v gs [v] fig.16 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [ w ] junction temperature : t j [oc] fig.17 static drain - source on - state resistance vs. drain current static drain - source on-state resistance : r ds(on) [ w ] drain current : i d [a] 9/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c oss c rss c iss t a =25oc f = 1mhz v gs = 0v 0 2 4 6 8 10 12 0 5 10 15 20 25 30 35 40 45 50 t a =25 oc v dd = 300 v i d = 12 a pulsed fig.18 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.20 switching characteristics switching time : t [ns] drain current : i d [a] fig.21 dynamic input characteristics total gate charge : q g [nc] gate - source voltage : v gs [v] coss stored energy : e oss [uj] fig.19 coss stored energy drain - source voltage : v ds [v] 0 2 4 6 8 10 12 14 0 200 400 600 t a =25 oc 1 10 100 1000 10000 0.01 0.1 1 10 100 t r t f t d(on) t d(off) v dd P 300v v gs = 10v r g = 10 w t a = 25oc pulsed 10/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l electrical characteristic curves 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 v gs =0v pulsed t a =125oc t a =75oc t a =25oc t a = - 25 oc 10 100 0 1 10 100 t a =25 oc v gs = 0v di / dt = 100a / m s pulsed fig.22 inverse diode forward current vs. source - drain voltage inverse diode forward current : i s [a] source - drain voltage : v sd [v] fig.23 reverse recovery time vs.inverse diode forward current reverse recovery time : t rr [ns] inverse diode forward current : i s [a] 11/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform fig.4-1 dv/dt measurement circuit fig.4-2 dv/dt waveform fig.5-1 di/dt measurement circuit fig.5-2 di/dt waveform 12/13 2013.04 - rev.a downloaded from: http:///
www.rohm.com ? 2013 rohm co., ltd. all rights reserved. data sheet r6012fnj l dimensions (unit : mm) dimension in mm / inches lpts l3 b2 b3 e b l2 e c1 a2 l1 c h a3 lp l l4 l3 l2 l1 b6 x b a b a1 e b5 d a pattern of terminal position areas [not a recommended pattern of soldering min max min max a1 0.00 0.30 0.000 0.012 a2 4.30 4.70 0.169 0.185 a3 b 0.68 0.98 0.027 0.039 b2 b3 1.14 1.44 0.045 0.057 c 0.30 0.60 0.012 0.024 c1 1.10 1.50 0.043 0.059 d 9.80 10.40 0.386 0.409 e 8.80 9.20 0.346 0.362 e h e 12.80 13.40 0.504 0.528 l 2.70 3.30 0.106 0.130 l1 0.90 1.50 0.035 0.059 l2 l3 l4 lp 0.90 1.50 0.035 0.059 x - 0.25 - 0.010 min max min max b5 - 1.23 - 0.049 b6 - 10.40 - 0.409 l1 - 2.10 - 0.083 l2 - 7.55 - 0.297 l3 - 13.40 - 0.528 dim milimeters inches 0.25 0.010 8.90 0.350 2.54 0.100 1.10 0.043 7.25 0.285 1.00 0.039 dim milimeters inches 13/13 2013.04 - rev.a downloaded from: http:///
r1102 a www.rohm.com ? 2013 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representativ e and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///

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