http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SGM1N25E 1a, 250v, r ds(on) 1.78 ? n-channel enhancement mode mosfet 07-jul-2015 rev. a page 1 of 4 rohs compliant product a suffix of -c specifies halogen and lead-free features low gate charge simple drive requirement green device available esd susceptibility 2kv marking package information absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 250 v gate-source voltage v gs 20 v t a =25c 1 continuous drain current@ v gs =10v 1 t a =70c i d 0.8 a pulsed drain current 2 i dm 4 a total power dissipation 3 t a =25c p d 3.5 w operating junction and storage temperature range t j ,t stg -55~150 c thermal resistance rating thermal resistance from junction to ambient 1 r ja 35 c / w millimeter millimeter ref. min. max. ref. min. max . a 4 . 30 4. 70 g 0.40 0.58 b 3 . 94 4. 40 h 1.50 typ c 1. 3 0 1. 70 j 3.00 typ d 2.25 2.70 k 0.32 0.52 e 1.50 1.85 l 0.35 0.46 f 0.89 1.20 package mpq leader size sot-89 3k 7 inch sot-89 a e c d b k h f g l j 1 2 3 4
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SGM1N25E 1a, 250v, r ds(on) 1.78 ? n-channel enhancement mode mosfet 07-jul-2015 rev. a page 2 of 4 electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage bv dss 250 - - v v gs =0, i d =250 a breakdown voltage temperature coefficient b v dss / t j - 0.3 - v/c reference to 25c, i d =1ma gate-threshold voltage v gs(th) 1.5 - 3.5 v v ds =v gs , i d =250 a forward transconductance g fs - 1.8 - s v ds =15v, i d =1a gate-source leakage current i gss - - 10 a v gs = 20v t j =25c - - 1 drain-source leakage current t j =85c i dss - - 25 a v ds =200v, v gs =0 static drain-source on-resistance 2 r ds(on) - - 1.78 v gs =10v, i d =1a total gate charge 2 q g - 4.47 - gate-source charge q gs - 1 - gate-drain (miller)charge q gd - 1.45 - nc v ds =200v v gs =10v i d =1a turn-on delay time 2 t d(on) - 11.8 - rise time t r - 10.7 - turn-off delay time t d(off) - 12.9 - fall time t f - 6.9 - ns v dd =125v v gs =10v r g =6 i d =1a input capacitance c iss - 214 - output capacitance c oss - 16.2 - reverse transfer capacitance c rss - 8 - pf v ds =25v v gs =0v f=1mhz source-drain diode diode forward voltage 2 v sd - 0.8 1.2 v i s =1a, v gs =0, t j =25c reverse recovery time t rr - 78 - ns reverse recovery charge q rr - 325 - nc i f =1a, di/dt=100a/ s, t j =25c notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper ,t 5sec , Q 62.5 /w at steady state. 2. the data tested by pulsed , pulse width 300 Q s, duty cycle 2%. Q 3. the power dissipation is limited by 150 c junc tion temperature. 4. the data is theoretically the same as i d and i dm , in real applications , should be limited by tota l power dissipation.
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SGM1N25E 1a, 250v, r ds(on) 1.78 ? n-channel enhancement mode mosfet 07-jul-2015 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SGM1N25E 1a, 250v, r ds(on) 1.78 ? n-channel enhancement mode mosfet 07-jul-2015 rev. a page 4 of 4 characteristic curves
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