analog power AM4514C n & p-channel 100-v (d-s) mosfet v ds (v) i d (a) 3.4 3.2 -3.3 -3.1 symbol nch limit pch limit units v ds 100 -100 v gs 20 20 t a =25c 3.4 -3.3 t a =70c 2.7 -2.6 i dm 15 -15 i s 2.7 -2.9 a t a =25c 2.1 2.1 t a =70c 1.3 1.3 t j , t stg c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature -100 130 @ v gs = -10v 150 @ v gs = -4.5v 100 140 @ v gs = 4.5v v product summary p d pulsed drain current b continuous source current (diode conduction) a operating junction and storage temperature range -55 to 150 parameter drain-source voltage gate-source voltage absolute maximum ratings (t a = 25c unless otherwise noted) t <= 10 sec maximum junction-to-ambient a steady state r ja a w c/w parameter thermal resistance ratings continuous drain current a i d power dissipation a r ds(on) (m) 120 @ v gs = 10v key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits so - 8 ? preliminary 1 publication order number: ds_AM4514C_1a
analog power AM4514C parameter symbol test conditions min typ max unit v ds = v gs , i d = 250 ua (nch) 1 v v ds = v gs , i d = -250 ua (pch) -1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 80 v, v gs = 0 v (nch) 1 v ds = -80 v, v gs = 0 v (pch) -1 v ds = 5 v, v gs = 10 v (nch) 4.3 a v ds = -5 v, v gs = -10 v (pch) -4.2 a v gs = 10 v, i d = 2 a (nch) 120 v gs = 4.5 v, i d = 1.6 a (nch) 140 v gs = -10 v, i d = -2 a (pch) 130 v gs = -4.5 v, i d = -1.6 a (pch) 150 v ds = 15 v, i d = 2 a (nch) 8 s v ds = -15 v, i d = -2 a (pch) 7 s i s = 1.35 a, v gs = 0 v (nch) 0.79 v i s = -1.45 a, v gs = 0 v (pch) -0.77 v total gate charge q g 9 gate-source charge q gs 4 gate-drain charge q gd 3 turn-on delay time t d(on) 7 rise time t r 5 turn-off delay time t d(off) 32 fall time t f 7 input capacitance c iss 1523 output capacitance c oss 56 reverse transfer capacitance c rss 54 total gate charge q g 25 gate-source charge q gs 7 gate-drain charge q gd 12 turn-on delay time t d(on) 8 rise time t r 8 turn-off delay time t d(off) 63 fall time t f 26 input capacitance c iss 1486 output capacitance c oss 127 reverse transfer capacitance c rss 104 n - channel v ds = 15 v, v gs = 0 v, f = 1 mhz pf nc p - channel v ds = -50 v, r l = 25 , i d = -2 a, v gen = -10 v, r gen = 6 ns v gs(th) i d(on) i dss r ds(on) v sd n - channel v ds = 50 v, v gs = 4.5 v, i d = 2 a p - channel v ds = -50 v, v gs = 4.5 v, i d = -2 a ua m m p - channel v ds = -15 v, v gs = 0 v, f = 1 mhz pf diode forward voltage a dynamic b nc n - channel v ds = 50 v, r l = 25 , i d = 2 a, v gen = 10 v, r gen = 6 ns static electrical characteristics forward transconductance a g fs on-state drain current a gate-source threshold voltage zero gate voltage drain current drain-source on-resistance a ? preliminary 2 publication order number: ds_AM4514C_1a
analog power AM4514C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - n-channel 0 0.05 0.1 0.15 0.2 0.25 0 1 2 3 4 5 rds(on) - on - resistance( ) id - drain current (a) 3.5v 4.5v,5v,5.5v,6v,8v,10v 4v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v, 5.5v,5v,4.5v 3.5v 4v 0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 500 1000 1500 2000 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz 0 1 2 3 4 5 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c i d = 2a ? preliminary 3 publication order number: ds_AM4514C_1a
analog power AM4514C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics - n-channel 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) 0 2 4 6 8 10 0 5 10 15 20 vgs - gate - to - source voltage (v) qg - total gate charge (nc) r ja = 110 c /w i d = 2a v ds = 50v 0 20 40 60 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) ? preliminary 4 publication order number: ds_AM4514C_1a
analog power AM4514C 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics - p-channel 1000 0 0.05 0.1 0.15 0.2 0.25 0.3 0 1 2 3 4 5 rds(on) - on - resistance( ) id - drain current (a) 4.5v,6v,8v,10v 3.5v 4v 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v 3.5v 4v 0 0.2 0.4 0.6 0.8 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c 0 1 2 3 4 5 0 1 2 3 4 5 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz i d = - 2a ? preliminary 5 publication order number: ds_AM4514C_1a
analog power AM4514C 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics - p-channel 0.01 0.1 1 10 100 0.1 1 10 100 1000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) r ja (t) = r(t) + r ja 0.2 0.1 0.05 0.02 p( pk ) t 1 t 2 d = 0.5 single pulse t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0 30 60 90 120 150 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) 0 2 4 6 8 10 0 10 20 30 40 50 vgs - gate - to - source voltage (v) qg - total gate charge (nc) r ja = 110 c /w v ds = - 50v i d = - 2a ? preliminary 6 publication order number: ds_AM4514C_1a
analog power AM4514C package information note: 1. all dimension are in mm. 2. package body sizes exclude mold flash, protrusion or gate burrs. mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side. 3. package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, tie bar burrs, gate burrs and interlead flash, but including any mismatch between the top and bottom of the plastic body. 4. the package top may be smaller than the package bottom. 5. dimension "b" does not include dambar protrusion. allowable dambar protrusion shall be 0.08 mm total in excess of "b" dimension at maximum material condition. the dambar cannot be located on the lower radius of the foot. ? preliminary 7 publication order number: ds_AM4514C_1a
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