advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 60v simple drive requirement r ds(on) 21m fast switching characteristic i d 3 7.8a rohs compliant & halogen-free description absolute maximum ratings@ t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without notice 201611281 1 AP6N021M halogen-free product parameter rating drain-source voltage 60 gate-source voltage + 20 drain current, v gs @ 10v 3 7.8 drain current, v gs @ 10v 3 6.3 pulsed drain current 1 40 total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 thermal data parameter storage temperature range ap6n021 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the so-8 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications. g d s s s s g d d d d so-8 .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =7a - - 21 m v gs =4.5v, i d =5a - - 45 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =7a - 26 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =7a - 32 51.2 nc q gs gate-source charge v ds =48v - 5.5 - nc q gd gate-drain ("miller") charge v gs =10v - 6.5 - nc t d(on) turn-on delay time v ds =30v - 10 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 ? -29- ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 1700 2720 pf c oss output capacitance v ds =30v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - - 1.3 v t rr reverse recovery time i s =7a, v gs =0 v , - 19 - ns q rr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP6N021M 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 125 /w when mounted on min. copper pad. .
AP6N021M fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 02468 v ds , drain-to-source voltage (v) i d , drain current (a) 10v 7.0v 6.0v 5.0v v g = 4.0v t a = 150 o c 16 17 18 19 20 21 22 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t a =25 o c 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =7a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua .
AP6N021M fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm t t 0.02 duty factor = t/t peak t j = p dm x r thja + t a r thja =125 /w 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0 2 4 6 8 10 12 0 1020304050 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =7a v ds =48v 0 1000 2000 3000 4000 1 21416181 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 10 20 30 40 0123456 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -55 o c operation in this area limited by r ds(on) q v g 10v q gs q gd q g charge .
AP6N021M fig 13. normalized bv dss v.s. junction fig 14. total power dissipation temperature fig 15. typ. drain-source on state resistance 5 0 1 2 3 4 0 50 100 150 t a , ambient temperature( o c) p d , power dissipation(w) 0 0.4 0.8 1.2 1.6 2 -100 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss i d =1ma 0 40 80 120 160 200 0 4 8 12162024 i d , drain current (a) r ds(on) (m ) t j =25 o c 4.5v v gs =10v .
AP6N021M marking information 6 6n021 ywwsss part numbe r date code (ywwsss) y last digit of the year ww week sss sequence .
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