ssf2129h3 20v dual p-channel mosfet www.goodark.com page 1 of 6 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v -6 i dm pulsed drain current -24 a power dissipation 2.0 w p d @tc = 25c linear derating factor 0.016 w/c v ds drain-source voltage -20 v v gs gate-to-source voltage 8 v t j t stg operating junction and storage temperature range -55 to +150 c thermal resistance symbol characteristics typ. max. units r jc junction-to-case 40 /w r ja junction-to-ambient ( t 10s) 78 /w v dss -20v r ds (on) 21m (typ.) i d -6.0a sop-8 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product it utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. g 1 d1 d2 g 2 s1 s2
ssf2129h3 20v dual p-channel mosfet www.goodark.com page 2 of 6 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 v v gs = 0v, id = -250a 21 30 m v gs =-4.5v,i d = -6a r ds(on) static drain-to-source on-resistance 33 40 m v gs =-2.5v,i d = -5.3a v gs(th) gate threshold voltage -0.4 -1.5 v v ds = v gs , i d = -250a 1 v ds = -20v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125 100 v gs =8v i gss gate-to-source forward leakage -100 na v gs = -8v q g total gate charge 24 q gs gate-to-source charge 4.2 q gd gate-to-drain("miller") charge 5.6 nc i d = -6a, v ds =-10v, v gs =-5v t d(on) turn-on delay time 8.1 t r rise time 15.2 t d(off) turn-off delay time 98 t f fall time 35 ns v gs =-4.5v, vds=-10v, i d = -1a, r gen =6 c iss input capacitance 2819 c oss output capacitance 262 c rss reverse transfer capacitance 196 pf v gs = 0v v ds = -10v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) -6 a i sm pulsed source current (body diode) -24 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage -1.0 v i s =-2.9a, v gs =0v d g s
ssf2129h3 20v dual p-channel mosfet www.goodark.com page 3 of 6 rev.1.0 test circuits and waveforms switch waveforms: notes: calculated continuous current based on maximum allowable junction temperature. repetitive rating; pulse width limited by max junction temperature. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. gate charge test circuit: switching time test circuit: eas test circuit:
ssf2129h3 20v dual p-channel mosfet www.goodark.com page 4 of 6 rev.1.0 typical electrical and thermal characteristics figure 1. maximum drain current vs. case temperature figure 2.typical capacitance vs. drain-to-source voltage figure3. maximum effective transient thermal impedance, junction-to-case
ssf2129h3 20v dual p-channel mosfet www.goodark.com page 5 of 6 rev.1.0 mechanical data sop8 package outline dimension
ssf2129h3 20v dual p-channel mosfet www.goodark.com page 6 of 6 rev.1.0 ordering and marking information device marking: ssf2129h3 package (available) sop-8 operating temperature range c : -55 to 150 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box sop-8 2500 2 5000 8 40000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 or 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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