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  december 2010 doc id 17391 rev 1 1/9 9 STTH4R02-Y automotive ultrafast recovery diode features very low conduction losses negligible switching losses low forward and reverse recovery times high junction temperature aec-q101 qualified description the stth4r02 uses st's new 200 v planar pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. packaged smb, smc, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection in automotive applications. table 1. device summary symbol value i f(av) 4 a v rrm 200 v t j (max) 175 c v f (typ) 0.76 v t rr (typ) 16 ns k a k a smb stth4r02uy smc stth4r02sy www.st.com
characteristics STTH4R02-Y 2/9 doc id 17391 rev 1 1 characteristics to evaluate the conduction losses use the following equation: p = 0.67 x i f(av) + 0.04 i f 2 (rms) table 2. absolute ratings (limiting values at t j = 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) forward rms current 70 a i f(av) average forward current, = 0.5 t c = 95 c 4 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 70 a t stg storage temperature range -65 to +175 c t j operating junction temperature range -40 to +175 c table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case 20 c/w table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) 1. pulse test: t p = 5 ms, < 2 % reverse leakage current t j = 25 c v r = v rrm 3 a t j = 125 c 2 20 v f (2) 2. pulse test: t p = 380 s, < 2 % forward voltage drop t j = 25 c i f = 12 a 1.15 1.25 v t j = 25 c i f = 4 a 0.95 1.05 t j = 150 c 0.76 0.83 table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time i f = 1 a, di f /dt = -50 a/s, v r = 30 v, t j = 25 c 24 30 ns i f = 1 a, di f /dt = -100 a/s, v r = 30 v, t j = 25 c 16 20 i rm reverse recovery current i f = 4 a, di f /dt = -200 a/s, v r = 160 v, t j = 125 c 4.4 5.5 a t fr forward recovery time i f = 4 a, di f /dt = 50 a/s v fr = 1.1 x v fmax , t j = 25 c 80 ns v fp forward recovery voltage i f = 4 a, di f /dt = 50 a/s, t j = 25 c 1.6 v
STTH4R02-Y characteristics doc id 17391 rev 1 3/9 figure 1. peak current versus duty cycle figure 2. forward voltage drop versus forward current (typical values) 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i m (a) t d =tp/t tp i m t =tp/t tp i m p = 2 w p = 2 w p = 1 w p = 1 w p = 5 w p = 5 w i fm (a) 0 25 50 75 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t j =25c t j =150c v fm (v) figure 3. forward voltage drop versus forward current (maximum values) figure 4. relative variation of thermal impedance, junction to ambient, versus pulse duration (smb) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i fm (a) t j =25c t j =150c v fm (v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z th(j-a) /r th(j-a) smb s cu =1cm2 t p (s) figure 5. relative variation of thermal impedance, junction to ambient, versus pulse duration (smc) figure 6. junction capacitance versus reverse applied voltage (typical values) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 z th(j-a) /r th(j-a) smc s cu =1cm2 t p (s) 10 100 1 10 100 1000 c(pf) f=1mhz v osc =30mv rms t j =25c v r (v)
characteristics STTH4R02-Y 4/9 doc id 17391 rev 1 figure 7. reverse recovery charges versus di f /dt (typical values) figure 8. reverse recovery time versus di f /dt (typical values) 0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400 450 500 q rr (nc) i f =4a v r =160v t j =125c t j =25c di f /dt(a/s) 0 10 20 30 40 50 60 70 80 10 100 1000 t rr (ns) i f =4a v r =160v t j =125c t j =25c di f /dt(a/s) figure 9. peak reverse recovery current versus di f /dt (typical values) figure 10. dynamic parameters versus junction temperature 0 2 4 6 8 10 0 50 100 150 200 250 300 350 400 450 500 i rm (a) i f =4a v r =160v t j =125c t j =25c di f /dt(a/s) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 q rr ;i rm [t j ]/q rr ;i rm [t j =125c] i rm q rr i f =4a v r =160v t j (c) figure 11. thermal resistance, junction to ambient, versus copper surface under tab - smb figure 12. thermal resistance, junction to ambient, versus copper surface under tab - smc 0 10 20 30 40 50 60 70 80 90 100 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r th(j-a) (c/w) smb s cu (cm2) epoxy printed circuit board fr4, copper thickness = 35 m 0 10 20 30 40 50 60 70 80 90 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 r th(j-a) (c/w) smc s cu (cm2) epoxy printed circuit board fr4, copper thickness = 35 m
STTH4R02-Y ordering information scheme doc id 17391 rev 1 5/9 2 ordering information scheme figure 13. ordering information scheme stth 4 r 02 xxx ultrafast switching diode average forward current 4 = 4 a 02 = 200 v u = smb in tape and reel s = smc in tape and reel y = automotive grade model r package repetitive peak reverse voltage
package information STTH4R02-Y 6/9 doc id 17391 rev 1 3 package information epoxy meets ul94, v0 band indicates cathode on smb and smc in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 14. footprint, dimensions in mm (inches) table 6. smb dimensions ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.40 0.006 0.016 d 3.30 3.95 0.130 0.156 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 l 0.75 1.50 0.030 0.059 e c l e1 d a1 a2 b 2.60 5.84 1.62 2.18 1.62 (0.064) (0.102) (0.300) (0.064) (0.086)
STTH4R02-Y package information doc id 17391 rev 1 7/9 figure 15. footprint, dimensions in mm (inches) table 7. smc dimensions ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b (1) 1. dimensions b and c apply to plated leads 2.90 3.20 0.114 0.126 c (1) 0.15 0.40 0.006 0.016 d 5.55 6.25 0.218 0.246 e 7.75 8.15 0.305 0.321 e1 6.60 7.15 0.260 0.281 e2 4.40 4.70 0.173 0.185 l 0.75 1.50 0.030 0.059 e c l e2 e1 d a1 a2 b 8.19 1.54 5.11 1.54 (0.061) (0.201) (0.322) (0.124) (0.061) 3.14
ordering information STTH4R02-Y 8/9 doc id 17391 rev 1 4 ordering information 5 revision history table 8. ordering information order code marking package weight base qty delivery mode stth4r02uy 4r2uy smb 0.107 g 2500 tape and reel stth4r02sy 4r2sy smc 0.243 g table 9. document revision history date revision changes 03-dec-2010 1 first issue.
STTH4R02-Y doc id 17391 rev 1 9/9 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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