this is information on a product in full production. november 2014 docid12360 rev5 1/13 13 STTH4R02 ultrafast recovery diode datasheet ? production data features ? negligible switching losses ? high junction temperature ? very low conduction losses ? low forward and reverse recovery times ? ecopack ? compliant component for dpak on demand description the STTH4R02 uses st's new 200 v planar pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. packaged in dpak, smb and smc, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection. 6 0 % . . $ 6 0 & $ . $ $ $ ' 3 $ . . . $ $ table 1. device summary symbol value i f(av) 4 a v rrm 200 v v f (typ) 0.76 v t j (max) 175 c t rr (typ) 16 ns www.st.com
characteristics STTH4R02 2/13 docid12360 rev5 1 characteristics to evaluate the conduction losses use the following equation: p = 0.67 x i f(av) + 0.04 i f 2 (rms) table 2. absolute ratings (limiting values at 25 c, unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i f(rms) forward rms current dpak 70 a smb, smc i f(av) average forward current, = 0.5, square wave dpak, t c = 160 c 4a smb, smc, t lead = 95 c i fsm surge non repetitive forward current t p = 10 ms sinusoidal 70 a t stg storage temperature range -65 to +175 c t j (1) maximum operating temperature 175 c 1. condition to avoid thermal runaway for a diode on its own heatsink dptot dtj < 1 rth(j-a) table 3. thermal parameters symbol parameter value unit r th(j-c) junction to case, dpak 3.5 c/w r th(j-l) junction to lead, smb and smc 20 table 4. static electrical characteristics symbol parameter test conditions min. typ. max. unit i r (1) reverse leakage current t j = 25 c v r = v rrm 3 a t j = 125 c 2 20 v f (2) forward voltage drop t j = 25 c i f = 12a 1.15 1.25 v t j = 25 c i f = 4 a 0.95 1.05 t j = 150 c 0.76 0.83 1. pulse test: t p = 5 ms, < 2% 2. pulse test: t p = 380 s, < 2%
docid12360 rev5 3/13 STTH4R02 characteristics table 5. dynamic electrical characteristics symbol parameter tests conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 1 a, di f /dt = -50 a/s v r = 30 v 24 30 ns i f = 1 a, di f /dt = -100 a/s v r = 30 v 16 20 i rm reverse recovery current t j = 125 c i f = 4 a, di f /dt = -200 a/s, v r = 160 v 4.4 5.5 a t fr forward recovery time t j = 25 c i f = 4 a, di f /dt = 50 a/s, v fr = 1.1 x v fmax 80 ns v fp forward recovery voltage t j = 25 c i f = 4 a, di f /dt = 50 a/s 1.6 v figure 1. peak current versus duty cycle figure 2. forward voltage drop versus forward current (typical values) / , 0 $ 7 / w s 7 w s 3 : 3 : 3 : , ) 0 $ 7 m ? & 9 ) 0 9 7 m ? & figure 3. forward voltage drop versus forward current (maximum values) figure 4. relative variation of thermal impedance, junction to case, versus pulse duration , ) 0 $ 7 m ? & 9 ) 0 9 7 m ? & ( ( ( ( = w k m f 5 w k m f w 3 v ' 3 $ . 6 l q j o h s x o v h
characteristics STTH4R02 4/13 docid12360 rev5 figure 5. relative variation of thermal impedance, junction to ambient, versus pulse duration (smb) figure 6. relative variation of thermal impedance, junction to ambient, versus pulse duration (smc) ( ( ( ( ( = w k m d 5 w k m d w 3 v 6 0 % 6 & |