? semiconductor components industries, llc, 2008 march, 2008 - rev. 1 1 publication order number: NTJS4160N/d NTJS4160N power mosfet 30 v, 3.2 a, single n-channel, sc-88 features ? offers an low r ds(on) solution in the sc-88 package ? low profile (< 1.1 mm) allows it to fit easily into extremely thin environments such as portable electronics ? operates at standard logic level gate drive ? low gate charge ? this is a pb-free device applications ? dc-dc converters (buck and boost circuit) ? optimized for battery powered portable equipment such as, cell phones, pdas, media players, etc. ? load management ? battery charging and ov ic protection circuits maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value unit drain-to-source voltage v dss 30 v gate-to-source voltage v gs 20 v continuous drain current (note 1) steady state t a = 25 c i d 2.6 a t a = 85 c 1.9 t 1 s t a = 25 c 3.2 power dissipation (note 1) steady state t a = 25 c p d 0.62 w t 1 s 0.95 continuous drain current (note 2) steady state t a = 25 c i d 1.8 a t a = 85 c 1.3 power dissipation (note 2) t a = 25 c p d 0.3 w pulsed drain current t p = 10 s i dm 10 a operating junction and storage temperature t j , t stg -55 to 150 c source current (body diode) i s 1.3 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size. device package shipping ? ordering information top view sc-88 (sot 363) case 419b style 28 marking diagram 6 1 http://onsemi.com t7 = device code m = date code = pb-free package (note: microdot may be in either location) sc-88 (sot-363) d d s d d 6 5 4 1 2 3 v (br)dss r ds(on) typ i d max 45 m @ 10 v 65 m @ 4.5 v 3.2 a NTJS4160Nt1g sc-88 (pb-free) 3000 units/reel t7 m g 30 v ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1
NTJS4160N http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction-to-ambient C steady state (note 3) r ja 200 c/w junction-to-ambient - t 1 s (note 3) r ja 132 junction-to-ambient C steady state (note 4) r ja 420 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j i d = 250 a, ref to 25 c 20 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 24 v t j = 25 c 1.0 a t j = 125 c 10 gate-to-source leakage current i gss v ds = 0 v, v gs = +20 v 100 na v ds = 0 v, v gs = -20 v -200 on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.8 2.4 v gate threshold temperature coefficient v gs(th) /t j -5.0 mv/ c drain-to-source on resistance r ds(on) v gs = 10 v, i d = 2.6 a 45 60 m v gs = 4.5 v, i d = 2.2 a 65 85 forward transconductance g fs v gs = 5.0 v, i d = 3.0 a 4.2 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 10 v 230 pf output capacitance c oss 62 reverse transfer capacitance c rss 39 total gate charge q g(tot) v gs = 4.5 v, v ds = 15 v, i d = 2.6 a 2.75 nc threshold gate charge q g(th) 0.37 gate-to-source charge q gs 0.87 gate-to-drain charge q gd 1.1 switching characteristics (note 6) turn-on delay time t d(on) v gs = 4.5 v, v dd = 15 v, i d = 1.0 a, r g = 6.0 8.7 15 ns rise time t r 7.2 13 turn-off delay time t d(off) 10.9 19 fall time t f 1.9 4.0 drain-source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 1.3 a t j = 25 c 0.79 1.2 v t j = 125 c 0.67 reverse recovery time t rr v gs = 0 v, di s /dt = 100 a/ s, i s = 1.3 a 10.3 ns charge time t a 7.2 discharge time t b 3.1 reverse recovery charge q rr 4.0 nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTJS4160N http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 5 v 4.0 v 0 10 2 3 1 v ds , drain-to-source voltage (volts) i d, drain current (amps) 5 1 0 figure 1. on-region characteristics 1.5 2 3 2 3.5 1 0 1 figure 2. transfer characteristics v gs , gate-to-source voltage (volts) 0.1 0.05 0 figure 3. on-resistance vs. gate voltage v gs , gate voltage (v) r ds(on), drain-to-source resistance ( ) i d, drain current (amps) figure 4. on-resistance vs. drain current and gate voltage -50 0 -25 25 1.4 1.2 1 0.8 0.6 50 125 100 figure 5. on-resistance variation with temperature t j , junction temperature ( c) t j = 25 c 0.4 1.0 2.0 t j = -55 c 75 150 i d = 2.6 a r ds(on), drain-to-source resistance (normalized) 2 25 c 5.0 figure 6. drain-to-source leakage current vs. voltage 4 v ds 4 v 0.25 3 7 9 2.5 t j = 150 c 4.0 3.0 i d = 2.6 a t j = 25 c 0 1.0 4.0 0.05 i d, drain current (amps) r ds(on), drain-to-source resistance ( ) 0 2.0 10 6.0 0.1 5.0 3.0 v gs = 10 v t j = 25 c 0.3 1.5 1.6 7.0 8.0 v gs = 4.5 v 1 1000 10 v ds , drain-to-source voltage (volts) i dss, leakage (na) 015 10 v gs = 0 v t j = 125 c 20 100 t j = 150 c 4 6 8 0.5 3.5 1.5 2.5 v gs = 3.8 v 2.4 v 2.6 v 2.8 v 3.0 v 3.2 v 3.4 v 3.6 v 4 4 3 6 5 8 7 10 9 7.0 10 9.0 8.0 6.0 0.2 0.15 0.35 9.0 1.3 1.1 0.9 0.7 4.5 < v gs < 10 v 6 v to 10 v
NTJS4160N http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) q gs q gd v gs v ds figure 7. capacitance variation figure 8. gate-to-source and drain-to-source voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance 100 1 r g , gate resistance (ohms) t, time (ns) 10 1 100 10 t d(off) figure 10. diode forward voltage vs. current 0.1 0 v sd , source-to-drain voltage (volts) i s , source current (amps) v gs = 0 v 0.4 0.5 0.6 0.2 0.3 0.4 t j = 25 c v gs = 0 v 10 400 300 150 50 0 drain-to-source voltage (volts) c, capacitance (pf) t j = 25 c c oss c iss c rss 30 15 100 250 20 5 0 v dd = 15 v i d = 1.0 a v gs = 4.5 v t d(on) t f t r 0.7 0.8 0.9 1.3 v gs , gate-to-source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 1 i d = 2.6 a t j = 25 c 3 qt 2 1 2 10 0 20 15 5 v ds , drain-to-source voltage (volts) 25 200 350 0.6 0.7 0.8 0.9 1.0 t j = -40 c t j = 125 c t j = 150 c 1.0 1.1 1.2 0.5
NTJS4160N http://onsemi.com 5 package dimensions sc-88 (sot-363) case 419b-02 issue w mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b-01 obsolete, new standard 419b-02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 -e- b 6 pl dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 28: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each custom er application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. NTJS4160N/d publication ordering information n. american technical support : 800-282-9855 toll free ?usa/canada europe, middle east and africa technical support: ?phone: 421 33 790 2910 japan customer focus center ?phone: 81-3-5773-3850 literature fulfillment : ?literature distribution center for on semiconductor ?p .o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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