r07ds1297ej0100 rev.1.00 page 1 of 7 oct 26, 2015 data sheet NP90N06VDK 60 v ? 90 a ? n-channel power mos fet application: automotive description NP90N06VDK is n-channel mos field effect transistor designed for high current switching applications. features ? super low on-state resistance ? r ds(on)1 = 5.3 m max. (v gs = 10 v, i d = 45 a) ? low c iss : c iss = 4000 pf typ. (v ds = 25 v) ? designed for automotive application and aec-q101 qualified outline source body diode gate drain to-252(mp-3zp) equivalent circuit remark: strong electric field, when exposed to this device, can cause destructi on of the gate oxide and ultimately degrade the device operation. steps must be taken to stop generation of static electricity as much as possible, and quickly diss ipate it once, when it has occurred. ordering information part no. lead plating packing package NP90N06VDK-e1-ay * 1 pure sn (tin) tape 2500 p/reel taping (e1 type) to-252(mp-3zp) NP90N06VDK-e2-ay * 1 taping (e2 type) note: * 1. pb-free (this product does not cont ain pb in the external electrode) r07ds1297ej0100 rev.1.00 oct 26, 2015
NP90N06VDK r07ds1297ej0100 rev.1.00 page 2 of 7 oct 26, 2015 absolute maximum ratings (t a = 25c) item symbol ratings unit drain to source voltage (v gs = 0 v) v dss 60 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) (t c = 25 c) i d(dc) 90 a drain current (pulse) ? 1 i d(pulse) 360 a total power dissipation (t c = 25 c) p t1 147 w total power dissipation (t a = 25 c) p t2 1.2 w channel temperature t ch 175 c storage temperature t stg ? 55 to + 175 c repetitive avalanche current ? ? 2 e ar 108 mj notes: * 1. t c = 25c, pw 10 s, duty cycle 1% * 2. r g = 25 , v gs = 20 v 0 v thermal resistance channel to case thermal resistance r th(ch-c) 1.02 c/w channel to ambient thermal resistance r th(ch-a) 125 c/w
NP90N06VDK r07ds1297ej0100 rev.1.00 page 3 of 7 oct 26, 2015 electrical characteristics (t a = 25c) item symbol min typ max unit test conditions zero gate voltage drain current i dss 1 a v ds = 60 v, v gs = 0 v gate leakage current i gss 100 na v gs = 20 v, v ds = 0 v gate to source threshold voltage v gs(th) 1.5 2.1 2.5 v v ds = v gs , i d = 250 a forward transfer admittance ? ? 1 r ds(on)1 3.8 5.3 m v gs = 10 v, i d = 45 a r ds(on)2 4.9 8.2 m v gs = 4.5 v, i d = 23 a input capacitance c iss 4000 6000 pf v ds = 25 v, v gs = 0 v, f = 1 mhz output capacitance c oss 360 540 pf reverse transfer capacitance c rss 110 200 pf turn-on delay time t d(on) 24 60 ns v dd = 30 v, i d = 45 a, v gs = 10 v, r g = 0 rise time t r 7 20 ns turn-off delay time t d(off) 60 120 ns fall time t f 6 20 ns total gate charge q g 63 95 nc v dd = 48 v, v gs = 10 v, i d = 90 a gate to source charge q gs 15 nc gate to drain charge q gd 12 nc body diode forward voltage ? s reverse recovery charge q rr 45 nc note: * 1. pulsed test test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 duty cycle 1% = 1 s v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10%
NP90N06VDK r07ds1297ej0100 rev.1.00 page 4 of 7 oct 26, 2015 typical characteristics (t a = 25c) derating factor of forward bias safe operating area total power dissipation vs. case temperature dt - percentage of rated power - % 0 20 40 60 80 100 120 0 50 100 150 200 t c - case temperature - c p t ? total power dissipation - w 0 40 80 120 160 0 50 100 150 200 t c - case temperature - c forward bias safe operating area i d - drain current - a 0.01 0.1 1 10 100 1000 0.1 1 10 100 t c =25 single pulse i d(pulse) =360a i d(dc) =90a power dissipation limited v ds - drain to source voltage ? v transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - c/w 0.01 0.1 1 10 100 1000 single pulse r th(ch-a) = 125c/w r th(ch-c) = 1.02c/w pw - pulse width - s 100 1 m 10 m 100 m 1 10 100 1000
NP90N06VDK r07ds1297ej0100 rev.1.00 page 5 of 7 oct 26, 2015 drain current vs. drain to source voltage forward transfer characteristics i d - drain current - a 0 100 200 300 400 0 0.5 1 1.5 2 2.5 3 3.5 v gs =4.5v pulsed v gs =10v v ds - drain to source voltage - v i d - drain current - a 0.001 0.01 0.1 1 10 100 01234 v ds = 10v pulsed t a =175c 75c 25c -55c v gs - gate to source voltage - v gate to source threshold voltage vs. channel temperature forward transfer admitt ance vs. drain current v gs(th) ? gate to source threshold voltage - v 0 1 2 3 -100 -50 0 50 100 150 200 v ds = v gs i d =250 a t ch - channel temperature - c | y fs | - forward transfer admittance - s 1 10 100 1000 0.1 1 10 100 v ds = 5v pulsed t a =175c 150c 75c 25c -55c i d - drain current - a drain to source on-state resistance vs. drain current drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 0.1 1 10 100 1000 pulsed v gs =10v 4.5v i d - drain current - a r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 0 5 10 15 20 pulsed i d =45a v gs - gate to source voltage - v
NP90N06VDK r07ds1297ej0100 rev.1.00 page 6 of 7 oct 26, 2015 drain to source on-state resistance vs. channel temperature capacitance vs. drain to source voltage r ds(on) - drain to source on-state resistance - m 0 2 4 6 8 10 12 -100 -50 0 50 100 150 200 pulsed v gs =4.5v i d =23a v gs =10v i d =45a t ch - channel temperature - c c iss , c oss , c rss - capacitance - pf tf ad i s 10 100 1000 10000 0.01 0.1 1 10 100 v gs = 0v f = 1.0mhz c rss c iss c oss v ds - drain to source voltage - v switching characteristics dynamic input characteristics td(on),tr,td(off),tr ? switching time - ns 1 10 100 1000 0.1 1 10 100 v dd = 30v v gs =10v r g =0 ? t d ( on ) t r t d ( off ) t f i d - drain current - a v ds - drain to source voltage - v 0 2 4 6 8 10 0 10 20 30 40 50 0 10203040506070 v dd = 48v 30v 12v i d =90a v ds v gs q g - gate charge - nc vgs - gate to source voltage - v source to drain diode forward volt age reverse recovery time vs. drain current i f - diode forward current - a 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 pulsed v gs =10v 0v 4.5v v f(s-d) - source to drain voltage - v t rr ? reverse recovery time - ns 1 10 100 0.1 1 10 100 di/dt = 100a/ s v gs = 0v i f - drain current - a
NP90N06VDK r07ds1297ej0100 rev.1.00 page 7 of 7 oct 26, 2015 package drawings (unit: mm) to-252 (mp-3zp) (mass: 0.3 g typ.) renesas package code: prss0004zp-a 6.5 0.2 2.3 0.1 0.5 0.1 0.76 0.12 0 to 0.25 0.5 0.1 1.0 no plating no plating 5.1 typ. 1.0 typ. 6.1 0.2 0.51 min. 4.0 min . 0.8 10.4 max. (9.8 typ.) 4.3 min. 1 4 23 1.14 max. 2.3 2.3 1. gate 2. drain 3. source 4. fin (drain) 1.13
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history np90 n06vdk data sheet rev. date description page summary 1.00 oct. 26, 2015 ? first edition issued
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