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| 1 IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet pg-to220fp mosfet 600vcoolmosacfd7powertransistor coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.thelatestcoolmos?cfd7isthe successortothecoolmos?cfd2seriesandisanoptimizedplatform tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge (zvs)andllc.resultingfromreducedgatecharge(q g ),best-in-class reverserecoverycharge(q rr )andimprovedturnoffbehaviorcoolmos? cfd7offershighestefficiencyinresonanttopologies.aspartofinfineons fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof afastswitchingtechnologytogetherwithsuperiorhardcommutation robustness,withoutsacrificingeasyimplementationinthedesign-in process.thecoolmos?cfd7technologymeetshighestefficiencyand reliabilitystandardsandfurthermoresupportshighpowerdensity solutions.altogether,coolmos?cfd7makesresonantswitching topologiesmoreefficient,morereliable,lighterandcooler. features ?ultra-fastbodydiode ?lowgatecharge ?best-in-classreverserecoverycharge(q rr ) ?improvedmosfetreversediodedv/dtanddi f /dtruggedness ?lowestfomr ds(on) *q g andr ds(on) *e oss ?best-in-classr ds(on) insmdandthdpackages benefits ?excellenthardcommutationruggedness ?highestreliabilityforresonanttopologies ?highestefficiencywithoutstandingease-of-use/performancetradeoff ?enablingincreasedpowerdensitysolutions potentialapplications suiteableforsoftswitchingtopologies optimizedforphase-shiftfull-bridge(zvs),llcapplicationsCserver, telecom,evcharging productvalidation: qualifiedforindustrialapplicationsaccordingtothe relevanttestsofjedec47/20/22 pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 650 v r ds(on),max 170 m w q g,typ 28 nc i d,pulse 51 a e oss @ 400v 3.2 j body diode di f /dt 1300 a/s type/orderingcode package marking relatedlinks IPA60R170CFD7 pg-to 220 fullpak 60r170f7 see appendix a d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3
2 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 3 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 1maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 8 5 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 51 a t c =25c avalanche energy, single pulse e as - - 60 mj i d =3.7a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.30 mj i d =3.7a; v dd =50v; see table 10 avalanche current, single pulse i as - - 3.7 a - mosfet dv/dt ruggedness dv/dt - - 120 v/ns v ds =0...400v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation p tot - - 26 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - mounting torque - - - 50 ncm m2.5 screws continuous diode forward current i s - - 8 a t c =25c diode pulse current 2) i s,pulse - - 51 a t c =25c reverse diode dv/dt 3) dv/dt - - 70 v/ns v ds =0...400v, i sd <=8a, t j =25c see table 8 maximum diode commutation speed di f /dt - - 1300 a/ m s v ds =0...400v, i sd <=8a, t j =25c see table 8 insulation withstand voltage v iso - - 2500 v v rms , t c =25c, t =1min 1) limited by t j,max . 2) pulse width t p limited by t j,max 3) identical low side and high side switch with identical r g d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 4 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 2thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 4.79 c/w - thermal resistance, junction - ambient r thja - - 80 c/w leaded thermal resistance, junction - ambient for smd version r thja - - - c/w n.a. soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 5 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 3electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 600 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 3.5 4 4.5 v v ds = v gs , i d =0.3ma zero gate voltage drain current 1) i dss - - - 7 1 37 m a v ds =600v, v gs =0v, t j =25c v ds =600v, v gs =0v, t j =125c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.144 0.328 0.17 - w v gs =10v, i d =6.0a, t j =25c v gs =10v, i d =6.0a, t j =150c gate resistance r g - 10.9 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 1199 - pf v gs =0v, v ds =400v, f =250khz output capacitance c oss - 22 - pf v gs =0v, v ds =400v, f =250khz effective output capacitance, energy related 2) c o(er) - 40 - pf v gs =0v, v ds =0...400v effective output capacitance, time related 3) c o(tr) - 402 - pf i d =constant, v gs =0v, v ds =0...400v turn-on delay time t d(on) - 31 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 rise time t r - 15 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 turn-off delay time t d(off) - 68 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 fall time t f - 9 - ns v dd =400v, v gs =10v, i d =7.0a, r g =10.2 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 7 - nc v dd =400v, i d =7.0a, v gs =0to10v gate to drain charge q gd - 9 - nc v dd =400v, i d =7.0a, v gs =0to10v gate charge total q g - 28 - nc v dd =400v, i d =7.0a, v gs =0to10v gate plateau voltage v plateau - 5.7 - v v dd =400v, i d =7.0a, v gs =0to10v 1) maximum specification is defined by calculated six sigma upper confidence bound 2) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to400v 3) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to400v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 6 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 1.0 - v v gs =0v, i f =6.0a, t j =25c reverse recovery time t rr - 89 134 ns v r =400v, i f =7a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 0.34 0.68 c v r =400v, i f =7a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 6.8 - a v r =400v, i f =7a,d i f /d t =100a/s; see table 8 d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 7 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 4electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 5 10 15 20 25 30 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 100 s 10 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.01 0.02 single pulse z thjc =f( t p );parameter: d=t p / t d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 8 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 20 40 60 80 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 10 20 30 40 50 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 10 20 30 40 50 0.260 0.300 0.340 0.380 0.420 0.460 10 v 7 v 6.5 v 20 v 6 v 5.5 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [normalized] -50 -25 0 25 50 75 100 125 150 0.5 1.0 1.5 2.0 2.5 r ds(on) =f( t j ); i d =6.0a; v gs =10v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 9 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 20 40 60 80 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 120 v 400 v v gs =f( q gate ); i d =7.0apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 10 2 125 c 25 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 20 40 60 80 e as =f( t j ); i d =3.7a; v dd =50v d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 10 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -50 -25 0 25 50 75 100 125 150 540 570 600 630 660 690 v br(dss) =f( t j ); i d =1ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 600 10 -1 10 0 10 1 10 2 10 3 10 4 10 5 ciss coss crss c =f( v ds ); v gs =0v; f =250khz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 600 0 1 2 3 4 5 6 7 e oss = f (v ds ) d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 11 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 5testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d 12 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 6packageoutlines figure1outlinepg-to220fullpak,dimensionsinmm/inches d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ? 3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 05 24-10-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. 13 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet 7appendixa table11relatedlinks ? ifxcoolmoscfd7webpage: www.infineon.com ? ifxcoolmoscfd7applicationnote: www.infineon.com ? ifxcoolmoscfd7simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ? 3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 05 24-10-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. 14 600vcoolmosacfd7powertransistor IPA60R170CFD7 rev.2.1,2018-01-22 final data sheet revisionhistory IPA60R170CFD7 revision:2018-01-22,rev.2.1 previous revision revision date subjects (major changes since last revision) 2.0 2017-08-25 release of final version 2.1 2018-01-22 raised diode current for dv/dt and dif/dt (table 2) to value of continuous drain current; changed internal rg (table 4); renamed related links (table 11) trademarksofinfineontechnologiesag aurix?,c166?,canpak?,cipos?,coolgan?,coolmos?,coolset?,coolsic?,corecontrol?,crossave?,dave?,di-pol?,drblade?, easypim?,econobridge?,econodual?,econopack?,econopim?,eicedriver?,eupec?,fcos?,hitfet?,hybridpack?,infineon?, isoface?,isopack?,i-wafer?,mipaq?,modstack?,my-d?,novalithic?,omnitune?,optiga?,optimos?,origa?,powercode?, primarion?,primepack?,primestack?,profet?,pro-sil?,rasic?,real3?,reversave?,satric?,sieget?,sipmos?,smartlewis?, solidflash?,spoc?,tempfet?,thinq?,trenchstop?,tricore?. trademarksupdatedaugust2015 othertrademarks allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2018infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (beschaffenheitsgarantie). withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseofthe productofinfineontechnologiesincustomersapplications. thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.itistheresponsibilityofcustomers technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. d r a i n p i n 2 g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d a2 h b d c b2 e e1 e l q ? 3 l1 n d1 a dim a1 document no. z8b00003319 2.5 revision 05 24-10-2014 issue date european projection 1.130 0.177 min 0.095 0.026 0.016 0.617 0.037 0.092 0.394 0.503 0.116 0.124 0.111 0.353 2.86 2.42 2.54 (bsc) 5.08 28.70 0.95 15.67 0.40 0.65 10.00 2.83 3.15 2.95 12.78 8.97 3 29.75 0.90 0.63 1.51 16.15 3.50 3.38 3.45 13.75 10.65 9.83 millimeters min 4.50 2.34 max 4.90 2.85 0.113 0.100 (bsc) 0.200 3 1.171 0.059 0.636 0.025 0.035 0.419 0.136 0.133 0.138 0.541 0.387 0 inches 0.193 max 0.112 scale 5mm 0 2.5 b1 0.037 0.95 1.38 0.054 b4 0.026 0.65 1.51 0.059 b3 0.026 0.65 1.38 0.054 dimensions do not include mold flash, protrusions or gate burrs. |
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