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savantic semiconductor product specification silicon npn power transistors BU536 description with to-3 package high voltage fast switching speed applications for color tv horizontal deflection circuits. pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1100 v v ceo collector-emitter voltage open base 480 v v ebo emitter-base voltage open collector 7 v i c collector current 8 a i cm collector current-peak t p <5ms 15 a p t total power dissipation t c =25 62 w t j junction temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors BU536 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0; 480 v v (br)ebo emitter-base breakdown voltage i e =10ma; i c =0; 7 v v cesat collector-emitter saturation voltage i c =4a;i b =0.8a 5.0 v v besat base-emitter saturation voltage i c =4a;i b =0.8a 1.5 v i cbo collector cut-off current v cb =1100v;i e =0 1.0 ma i ebo emitter cut-off current v eb =5v;i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =4a ; v ce =5v 6.5 downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors BU536 package outline fig.2 outline dimensions downloaded from: http:/// |
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