2014. 3. 31 1/3 semiconductor technical data kta2012e epitaxial planar pnp transistor revision no : 2 switching application. features h a collector current is large. h collector saturation voltage is low. : v ce(sat) ? -250mv at i c =-200ma/i b =-10ma. h complementary to ktc4072e. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -15 v collector-emitter voltage v ceo -12 v emitter-base voltage v ebo -6 v collector current i c -500 ma i cp * -1 a collector power dissipation p c 100 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-15v, i e =0 - - -100 na collector-base breakdown voltage v (br)cbo i c =-10 a -15 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma -12 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a -6 - - v dc current gain h fe v ce =-2v, i c =-10ma 270 - 680 - collector-emitter saturation voltage v ce(sat) i c =-200ma, i b =-10ma - -100 -250 mv transition frequency f t v ce =-2v, i c =-10ma, f t =100mhz - 260 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 6.5 - pf * single pulse pw=1ms.
2014. 3. 31 2/3 kta2012e revision no : 2
2014. 3. 31 3/3 kta2012e revision no : 2
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