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march 2016 docid025823 rev 2 1 / 14 this is information on a product in full production. www.st.com STL9P3LLH6 p - channel - 30 v, 12 m typ., - 9 a stripfet? h6 power mosfet in a powerflat? 3.3x3.3 package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max i d STL9P3LLH6 - 30 v 15 m? - 9 a ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is a p - channel power mosfet developed using the stripfet? h6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: device summary order code marking package packing STL9P3LLH6 9p3l powerflat? 3.3x3.3 tape and reel 1 2 3 4 powerfl a t? 3.3x3.3
contents STL9P3LLH6 2 / 14 docid025823 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 poweflat 3.3x3.3 package in formation ................................ ........ 10 5 revision history ................................ ................................ ............ 13
STL9P3LLH6 electrical ratings docid025823 rev 2 3 / 14 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage - 30 v v gs gate - source voltage 20 v i d drain current (continuous) at t pcb = 25 c - 9 a i d drain current (continuous) at t pcb = 100 c - 5.9 a i dm (1) drain current (pulsed) - 36 a p tot total dissipation at t pcb =25 c 3 w t stg storage temperature range - 55 to 150 c t j operating junction temperature range notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 2.5 c/w r thj - pcb (1) thermal resistance junction - pcb 42 c/w notes: (1) when mounted on fr - 4 board of 1inch2, 2oz cu t<10sec
electrical characteristics STL9P3LLH6 4 / 14 docid025823 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4: on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0, i d = - 1 ma - 30 v i dss zero gate voltage drain current v gs = 0, v ds = - 30 v - 1 a v gs = 0, v ds = - 30 v, t c = 125 c (1) - 10 a i gss gate - body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = - 250 a - 1 v r ds(on) static drain - source on - resistance v gs = - 10 v, i d = - 4.5 a 12 15 m? v gs = - 4.5 v, i d = - 4.5 a 18 22.5 m? notes: (1) defined by design, not subject to production test. table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = - 25 v, f = 1 mhz, v gs = 0 - 2615 - pf c oss output capacitance - 340 - pf c rss reverse transfer capacitance - 235 - pf q g total gate charge v dd = - 15 v, i d = - 6 a, v gs = - 4.5 v (see figure 13: "switching times test circuit for resistive load" ) - 24 - nc q gs gate - source charge - 9 - nc q gd gate - drain charge - 8 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = - 15 v, i d = - 4.5 a, r g = 4.7 , v gs = - 10 v - 13.2 - ns t r rise time - 93 - ns t d(off) turn - off delay time - 50 - ns t f fall time - 18 - ns
STL9P3LLH6 electrical characteristics docid025823 rev 2 5 / 14 table 7: source drain diode symbol parameter test conditions min. typ. max. unit v sd (1) forward on voltage i sd = - 9 a, v gs = 0 - - 1.1 v t rr reverse recovery time i sd = - 9 a, di/dt = 100 a/s v dd = - 24 v, t j =150 c - 20 ns q rr reverse recovery charge - 16 nc i rrm reverse recovery current - - 1.6 a notes: (1) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STL9P3LLH6 6 / 14 docid025823 rev 2 2.2 electrical characteristics (curves) note: for the p - channel power mosfet, current and voltage polarities are reversed. figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STL9P3LLH6 electrical characteristics docid025823 rev 2 7 / 14 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v (br)dss vs temperature figure 12 : source - drain diode forward characteristics
test circuits STL9P3LLH6 8 / 14 docid025823 rev 2 3 test circuits figure 13 : switching times test circuit for resistive load figure 14 : gate charge test circuit figure 15 : test circuit for inductive load switching and diode recovery times
STL9P3LLH6 package information docid025823 rev 2 9 / 14 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STL9P3LLH6 10 / 14 docid025823 rev 2 4.1 poweflat 3.3x3.3 package information figure 16 : powerflat? 3.3x3.3 package outline bot t om view side view t o p view 8465286_ a
STL9P3LLH6 package information docid025823 rev 2 11 / 14 table 8: powerflat? 3.3x3.3 package mechanical data dim. mm min. typ. max. a 0.70 0.80 0.90 b 0.25 0.30 0.39 c 0.14 0.15 0.20 d 3.10 3.30 3.50 d1 3.05 3.15 3.25 d2 2.15 2.25 2.35 e 0.55 0.65 0.75 e 3.10 3.30 3.50 e1 2.90 3.00 3.10 e2 1.60 1.70 1.80 h 0.25 0.40 0.55 k 0.65 0.75 0.85 l 030 0.45 0.60 l1 0.05 0.15 0.25 l2 0.15 8 10 12
package information STL9P3LLH6 12 / 14 docid025823 rev 2 figure 17 : powerflat? 3.3x3.3 recommended footprint 8465286_footprint
STL9P3LLH6 revision history docid025823 rev 2 13 / 14 5 revision history table 9: document revision history date revision changes 23 - jan - 2014 1 first release. 07 - mar - 2016 2 modified: title and r ds(on) max value modified: table 2: "absolute maximum ratings" , table 4: "on /off states" , table 5: "dynamic" , table 6: "switching times" and table 7: "source drain diode" minor text changes.
STL9P3LLH6 14 / 14 docid025823 rev 2 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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