jiangsu changjiang electron ics technology co., ltd dfnwb5 2-6l-a plastic-encapsulate mosfets cjnd88 04 du al n-channel mosfet description the cjnd8 804 uses advanced tr ench technology to provide excellent r ds(on ) and low gate charge. it is es d protected. this device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. marking: maximum ra tings (t a =25 unless other wise noted) para meter symbol value unit drain-s ource voltage v ds 20 v gate-source voltage v gs 12 v conti nuous drain current i d 8 a pulse d drain current i dm * 30 a t hermal resistance from junction to ambient(note1) r ja 175 /w t hermal resistance from junction to ambient(note2) 70 /w junctio n temperature t j 150 storage t emperature t st g -55~ +150 lea d temperature for soldering purposes(1/8?? from case for 10 s) t l 260 *re petitive rating pluse width limited by junction temperature. note 1.when mounted on a minimum pad. 2.when mounted on 1 in 2 of 2oz copp er board. dfnwb 5 2-6l-a ? v (br )dss r ds(o n) max i d 20v ?13 m @10 v 8 a ? 14 m @4 .5v 15.5m@3.8v ? 19 m @2 .5v 27m@1 .8v equivalent circuit www.cj-elec.com 1 d,aug,2015
para meter symbol test condition min typ max unit st atic parameters drain-s ource breakdown voltage v (b r) dss v gs = 0v, i d =250a 20 v z ero gate voltage drain current i d ss v ds = 16v,v gs = 0v 10 a gate-bod y leakage current i gss v gs = 10v, v ds = 0 v 10 a gate threshol d voltage (note 1) v gs( th) v ds =v gs , i d = 250a 0.5 1 v drain-s ource on-resistance (note 1) r d s(on) v gs = 10v, i d =8a 13 m ? v gs =4.5v, i d =5a 14 m ? v gs =3.8v, i d =5a 15.5 m ? v gs =2.5v, i d =4a 19 m ? v gs =1.8v, i d =3a 27 m ? f orward tranconductance (note 1) g fs v ds =5 v, i d =8 a 17 s diod e forward voltage (note 1) v sd i s =1 a, v gs = 0v 1 v dyn amic parameters (note 2) input cap acitance c iss v ds = 10v,v gs =0 v,f =1mhz 1800 pf output cap acitance c oss 230 pf revers e transfer capacitance c rss 200 pf t otal gate charge q g v ds = 10v,v gs =4 .5v,i d =8 a 17.9 nc gate-source c harge q gs 1.5 nc gate-drain charge q gd 4.7 nc switching pa rameters (note 2) t urn-on delay time t d( on) v gs = 10v,v dd = 10v, r l =1 .2 ?,r gen =3 ? 2.5 ns t urn-on rise time t r 7.2 ns t urn-off delay time t d( off) 49 ns t urn-off fall time t f 10.8 ns no tes : 1. pulse test : pulse width 300s, duty cycle 0.5%. 2. guaranteed by design, not su bject to production testing. mosfet electrical characteristics a t =25 / unless otherwise specified www.cj-elec.com 2 d,aug,2015
0246 81 0 0 5 10 15 20 25 0.0 0 .2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 10 25 50 75 100 125 350 400 450 500 550 600 650 700 750 12 34 5678 0 5 10 15 20 25 30 35 40 024 68 1 01 2 0 20 40 60 80 100 0.0 0 .2 0.4 0 .6 0.8 1.0 1.2 1e-4 1e-3 0.01 0.1 1 10 v gs =10v 3.0v 2v v gs =1.5v drain current i d (a) drain to source voltage v ds (v) pulsed v gs =1.2v drain current i d (a) gate to source voltage v gs (v) v ds =16v pulsed t a =100 t a =25 t r ansfer characteristics o u tput characteristics t hresho ld voltage v th (mv) junction tem perature t j ( ) i d =250ua t hr eshold voltage v gs =2.5v o n -resistance r ds ( on) (m ? ) drain current i d (a) t a =25 puls ed v gs =10v v gs =1.8v i d ?? r ds(o n) t a =100 t a =25 o n -resistance r ds ( on) (m ? ) gate to source voltage v gs (v) t a =25 puls ed i d =8a r ds(o n) ?? v gs t a =100 t a =25 source to drain voltage v sd (v) source current i s (a) t a =25 puls ed v sd i s ? ? 7 \ s l f d o & k d u d f w h u l v w l f v www.cj-elec.com 3 d,aug,2015
4 d,aug,2015
!" !#" !" ! # " a1 0.000 0.050 0.000 0.002 a3 d 1.924 2.076 0.076 0.082 e 4.924 5.076 0.194 0.200 d1 1.350 1.550 0.053 0.061 e1 2.950 3.150 0.116 0.124 k b 0.200 0.300 0.008 0.012 e l 0.424 0.576 0.017 0.023 0.500typ. 0.020typ. $ %!& %%' 0.200min. 0.008min. 0.203ref. 0.008ref. a 0. 700 0.800 0.028 0.031
dfnwb5x2-6l tape and reel www.cj-elec.com 5 d,aug,2015
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