sotC23 high voltage transistors maximum ratings rating symbol m mbta42 m mbta43 unit collector?emitter voltage v ceo 300 200 vdc collector?base voltage v cbo 300 200 vdc emitter?base voltage v ebo 6.0 6.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol ma x unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol mi n max unit off characteristics collector?emitter breakdown voltage(3) v (br)ceo vdc (i c = 1.0 madc, i b = 0) m mbta42 300 ? m mbta43 200 ? collector?base breakdown voltage v (br)cbo vdc (i c = 100 adc, i e = 0) m mbta42 300 ? m mbta43 200 ? emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 100 adc, i c = 0) collector cutoff current i cbo adc ( v cb = 200vdc, i e = 0) m mbta42 ? 0.1 ( v cb = 160vdc, i e = 0) m mbta43 ? 0.1 emitter cutoff current i ebo adc ( v eb = 6.0vdc, i c = 0) m mbta42 ? 0.1 ( v eb = 4.0vdc, i c = 0) m mbta43 ? 0.1 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. value 2 emitter 3 collector 1 base ? device marking and ordering information device marking package shipping m mbta42lt1 1d sot-23 3000/tape&reel m mbta43lt1 m1e sot-23 3000/tape&reel rohs product for packing code suffix "g" halogen free product for packing code suffix "h" . mm bta4xlt1 2012-11 willas electronic corp.
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain h fe ?? (i c = 1.0 madc, v ce = 10 vdc) both types 25 ? (i c = 10 madc, v ce = 10 vdc) both types 40 ? m mbta42 40 ? (i c = 30 madc, v ce = 10 vdc) m mbta43 40 ? collector?emitter saturation voltage v ce(sat) vdc (i c = 20 madc, i b = 2.0 madc) m mbta42 ? 0.5 m mbta43 ? 0.5 base?emitter saturation voltage v be(sat) ? 0.9 vdc (i c = 20 madc, i b = 2.0 madc) smallCsignal characteristics current ?gain?bandwidth product f t 50 ? mhz (v ce = 20 vdc, i c = 10ma, f = 100 mhz) collector ? base capacitance c cb pf (v cb = 20 vdc, i e = 0, f = 1.0 mhz) m mbta42 ? 3.0 m mbta43 ? 4.0 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2012-11 willas electronic corp. high voltage transistors mm bta4xlt1
200 100 50 30 20 h fe , dc current gain 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 i c , collector current (ma) figure 8. dc current gain t j = 125c 25c ? 55c v ce = 10vdc c eb v r , reverse voltage (volts) figure 2. capacitance c, capacitance (pf) 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 100 50 20 10 5.0 2.0 1.0 c cb f t , current? gain ? bandwidth product (mhz) i c , collector current (ma) figure 3. currentCgain bandwidth product t j = 25c v ce = 20 v f = 20 mhz 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 100 70 50 30 20 10 v, voltage (volts) i c , collector current (ma) figure 4. on voltages t j = 25c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce(sat) @ i c /i b = 10 5.0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 2012-11 willas electronic corp. high voltage transistors mm bta4xlt1
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 2012-11 willas electronic corp. high voltage transistors mm bta4xlt1 dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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