elektronische bauelemente SSPF7490N 8.3a, 150v, r ds(on) 48 m ? n-ch enhancement mode power mosfet 11-may-2016 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. b e f g g a e b d c d rohs compliant product a suffix of -c specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provi de low r ds(on) and to ensure minimal power loss and heat dissipation. features low r ds(on) trench technology low thermal impedance fast switching speed application industrial d/c/dc conversion circuits white led boost converters automotive systems package information package mpq leader size dfn5x6-8pp 3k 13 inch maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 150 v gate-source voltage v gs 20 v t a =25c 8.3 a continuous drain current 1 t a =70c i d 6.7 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 7.1 a t a =25c 5 w power dissipation 1 t a =70c p d 3.2 w operating junction and storage temperature range t j , t stg -55~150 c thermal resistance ratings t Q 10 sec 25 c / w maximum thermal resistance from junction to ambient 1 steady state r ja 65 c / w notes: 1. the surface of the device is mounted on a 1 x 1 fr4 board. 2. the pulse width is limited by the maximum junct ion temperature. dfn5x6-8pp millimeter millimeter ref. mi n. max. ref. min. max. a 0.85 1 0 10 b 5.2 bsc b 0.3 0.5 c 0.15 0.25 d 1.27 bsc d 3.81 bsc e 5.55 bsc e 6.05 bsc g 1.2 typ. f 0.25 bsc g 3.81 bsc
elektronische bauelemente SSPF7490N 8.3a, 150v, r ds(on) 48 m ? n-ch enhancement mode power mosfet 11-may-2016 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition static 1 gate-source threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds =0v, v gs = 20v - - 1 v ds =120v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =120v, v gs =0, t j =55c on-state drain current i d(on) 15 - - a v ds =5v, v gs =10v - - 48 v gs =10v, i d =8.3a drain-source on-resistance r ds(on) - - 54 m v gs =5.5v, i d =6.4a forward transconductance g fs - 15 - s v ds =15v, i d =8.3a diode forward voltage v sd - 0.74 - v i s =3.6a, v gs =0 dynamic 1 total gate charge q g - 58 - gate-source charge q gs - 17 - gate-drain charge q gd - 35 - nc v ds =75v v gs =5.5v i d =8.3a input capacitance c iss - 4388 - output capacitance c oss - 260 - reverse transfer capacitance c rss - 239 - pf v ds =15v v gs =0 f=1mhz turn-on delay time t d(on) - 20 - rise time t r - 35 - turn-off delay time t d(off) - 122 - fall time t f - 38 - ns v ds =75v v gen =10v i d =8.3a r l =9.1 r gen =6 notes: 1. pulse test pulse width Q 300 s, duty cycle Q 2%.
elektronische bauelemente SSPF7490N 8.3a, 150v, r ds(on) 48 m ? n-ch enhancement mode power mosfet 11-may-2016 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
elektronische bauelemente SSPF7490N 8.3a, 150v, r ds(on) 48 m ? n-ch enhancement mode power mosfet 11-may-2016 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curve
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