smd type ic www.kexin.com.cn 1 smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 npn epitaxial planar silicon transistor 2SC4577 features low collector-to-emitter saturation voltage. small-sized package. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 20 v collector-emitter voltage v ceo 15 v emitter-base voltage v ebo 5v collector current i c 500 ma collector current (pulse) i cp 1a collector dissipation p c 200 mw junction temperature t j 150 storage temperature t stg -55to+150 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =15v,i e =0 0.1 a emitter cutoff current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =2v,i c = 10ma 135 600 gain bandwidth product f t v ce =2v,i c =50ma 300 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 4.0 pf i c =5ma,i b = 0.5ma 15 30 mv i c =200ma,i b = 10ma 160 300 mv base-emitter saturation voltage v be(sat) i c =200mv,i b = 10ma 0.95 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 20 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 15 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 5 v v ce(sat) collector-emitter saturation voltage h fe classification marking rank 5 6 7 hfe 135 270 200 400 300 600 ut
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