data s he et www.rohm.com ? 2016 rohm co., ltd. all rights reserved. sic power module BSM180D12P3C007 l application l circuit diagram ? motor drive ? inverter, converter ? photovoltaics, wind power generation. ? induction heating equipment. l features 1) low surge, low switching loss. 2) high-speed switching possible. 3) reduced temperature dependence. l construction this product is a half bridge module consisting of sic-umosfet and sic-sbd from rohm. l dimensions & pin layout (unit : mm) 5 6 7 8 9 10 1 2 4 3 (m 2.6 for self-tapping screw) *do not connnect to nc pin. 1 3,4 2 10 9 8(n.c) 5 6 7(n.c) 1/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l absolute maximum ratings (t j = 25c) symbol unit v dss g-s short i d dc (t c =60c) i drm pulse (t c =60c) 1ms * 2 i s dc (t c =60c) v gs =18v total power disspation * 3 ptot t c =25c w max junction temperature t jmax t jop t stg main terminals : m6 screw (*1) case temperature (t c ) is defined on the surface of base plate just under the chips. (*2) repetition rate should be kept within the range where temperature rise if die should not exceed tjmax. (*3) t j is less than 175c (*4) actual measurement is 3000vrms/1sec. in accordance with ul1557. v 175 c a n m vrms 4.5 3.5 880 - 40 to150 - 40 to125 2500 mounting torque isolation voltage * 4 conditions source current * 1 storage temperature v gss d-s short junction temperature drain current * 1 parameter drain-source voltage gate-source voltage( + ) gate-source voltage( - ) i srm pulse (t c =60c) 1ms v gs =18v * 2 pulse (t c =60c) 10 m s v gs =0v * 2 mounting to heat shink : m5 screw - limit 1200 22 - 4 180 visol terminals to baseplate, f=60hz ac 1min. 360 180 360 360 2/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristics (t j =25c) symbol min. typ. max. unit t j =25c 1.8 2.6 t j =125c 2.7 t j =150c 3.1 4 i dss - 2 m a t j =25c 2.1 2.6 t j =125c 2.6 - t j =150c 2.8 4.3 t j =25c 1.4 t j =125c 1.9 t j =150c 2 v gs(th) 2.7 - 5.6 v 0.5 - 0.5 t d(on) 50 t r 70 t rr 35 t d(off) 165 t f 50 ciss v ds =10v, v gs =0v,200khz 9 nf gate registance r gint t j =25c - 1.4 - w stray inductance ls 25.0 - nh terminal to heat sink 11.5 - mm terminal to terminal 19.0 - mm terminal to heat sink 9.5 - mm terminal to terminal 13.0 - mm umosfet (1/2 module) * 6 0.17 sbd (1/2 module) * 6 0.21 (*5) in order to prevent self turn-on, it is recommended to apply negative gate bias. (*6) measurement of t c is to be done at the point just beneath the chip. (*7) typical calue is measured by using thermally conductive grease of =0.9w/(m ? k). (*8) sic devices have lower short cuicuit withstand capability due to high current density. please be advised to pay careful attention to short cuicuit accident and try to adjust protection time to shutdown them as short as possible. l waveform for switching test v m a ns c/w case-to-heat sink thermal resistance r th (c-f) case to heat sink, per 1 module, thermal grease appied * 7 - 0.035 - c/w input capacitance junction-to-case thermal resistance r th (j-c) creepage distance clearance distance v v gs =18v, i s =180a - - gate-source leakage current i gss v gs =22v, v ds =0v v gs = - 4v, v ds =0v switching characteristics v gs(on) =18v, v gs(off) = - 2v * 5 v ds =600v i d =180a r g(on) =8.2 w , r g(off) =4.7 w inductive load gate-source threshold voltage v ds =10v, i d =50ma parameter conditions static drain-source on-state voltage v ds(on) i c =180a, v gs =18v drain cutoff current v ds =1200v, v gs =0v source-drain voltage v sd v gs =0v, i s =180a id vds 10% 0v 10% 90% 10% 10% 90% eon=idvds 2% td(on) tr 2% trr 90% 2% 2% eoff=idvds td(off) tf vsurge vgs 3/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) fig.1 typical output characteristics [ t j =25oc ] drain current : i d [a] drain-source voltage : v ds [v] drain-source voltage : v ds [v] drain current : i d [a] drain-source voltage : v ds [v] gate-source voltage : v gs [v] 0 60 120 180 240 300 360 0 2 4 6 8 v gs = 12 v v gs =14v v gs =16v v gs = 20 v v gs =18v v gs =10v 0 1 2 3 4 5 6 7 8 0 60 120 180 240 300 360 t j = 125 oc t j = 150 oc t j = 25 oc v gs =18v 0 1 2 3 4 5 12 14 16 18 20 22 24 i d =180a i d = 120 a i d =90a i d =60a t j = 25 oc fig.2 drain-source voltage vs. drain current [ t j = 25 oc ] fig.3 drain-source voltage vs. gate-source voltage [ t j = 25 oc ] 0 5 10 15 20 25 30 0 50 100 150 200 250 i d =180a v gs =12v v gs = 14 v v gs =16v v gs =20v v gs = 18 v junction temperature : t j [oc] static drain - source on-state resistance : r ds(on) [m w ] fig.4 static drain - source on-state resistance vs. junction temperature 4/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) fig.6 forward characteristic of diode source current : is [a] source-drain voltage : v sd [v] 0 60 120 180 240 300 360 0 1 2 3 4 t j =25oc t j = 125 oc t j = 150 oc t j = 150 oc t j =125oc t j =25oc gate-source voltage : v gs [v] fig.7 drain current vs. gate-source voltage drain current : i d [a] fig. 8 drain current vs. gate-source voltage drain current : i d [a] gate-source voltage : v gs [v] 0 60 120 180 240 300 360 0 5 10 15 t j =25oc t j =125oc t j = 150 oc v ds =20v 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 0 5 10 15 t j =25oc t j = 125 oc t j = 150 oc v ds = 20 v v gs =0v v gs =18v fig.5 forward characteristic of diode source current : is [a] source-drain voltage : v sd [v] 1 10 100 1000 0 1 2 3 4 t j =25oc t j = 125 oc t j = 150 oc t j = 150 oc t j =125oc t j =25oc v gs =0v v gs = 18 v 5/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) switching time : t [ns] 1 10 100 1000 0 100 200 300 400 t d(off) t r t f t d(on) 1 10 100 1000 0 100 200 300 400 t d(off) t r t f t d(on) 0 5 10 15 20 25 0 100 200 300 400 e off e rr e on 1 10 100 1000 0 100 200 300 400 t d(off) t r t f t d(on) fig.10 switching characteristics [ t j =125oc ] switching time : t [ns] drain current : i d [a] fig. 11 switching characteristics [ t j = 150 oc ] switching time : t [ns] drain current : i d [a] fig.12 switching loss vs. drain current [ t j =25oc ] switching loss [mj] drain current : i d [a] v ds =600v v gs(on) =18v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load v ds = 600 v v gs(on) = 18 v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load v ds =600v v gs(on) =18v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load drain current : i d [a] fig. 9 switching characteristics [ t j = 25 oc ] v ds =600v v gs(on) =18v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load 6/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) 0 5 10 15 20 25 0 100 200 300 400 e off e rr e on 1 10 100 1 10 100 0 100 200 300 400 i rr t rr 0 5 10 15 20 25 0 100 200 300 400 e off e rr e on 1 10 100 1 10 100 0 100 200 300 400 i rr t rr recovery current : i rr [a] fig.16 recovery characteristics vs. drain current [ t j =125oc ] recovery current : i rr [a] recovery time : t rr [ns] fig.15 recovery characteristics vs. drain current [ t j =25oc ] drain current : i d [a] drain current : i d [a] recovery time : t rr [ns] fig.14 switching loss vs. drain current [ t j =150oc ] switching loss [mj] drain current : i d [a] v ds =600v v gs(on) =18v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load v ds =600v v gs(on) =18v v gs(off) = - 2v r g =8.2 w inductive load v ds = 600 v v gs(on) = 18 v v gs(off) = - 2v r g =8.2 w inductive load fig.13 switching loss vs. drain current [ t j =125oc ] switching loss [mj] drain current : i d [a] v ds =600v v gs(on) =18v v gs(off) = - 2v r g(on) =8.2 w r g(off) =4.7 w inductive load 7/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) fig.19 switching characteristics vs. gate resistance [ t j =125oc ] switching time : t [ns] switching time : t [ns] switching time : t [ns] 1 10 100 1 10 100 0 100 200 300 400 i rr t rr 10 100 1000 10000 1 10 100 t d(off) t r t f t d(on) 10 100 1000 10000 1 10 100 t d(off) t f t r t d(on) 10 100 1000 10000 1 10 100 t d(off) t r t f t d(on) gate resistance : r g [ w ] gate resistance : r g [ w ] fig. 18 switching characteristics vs. gate resistance [ t j = 25 oc ] gate resistance : r g [ w ] fig.20 switching characteristics vs. gate resistance [ t j =150oc ] v ds = 600 v i d = 180 a v gs(on) = 18 v v gs(off) = - 2v inductive load v ds = 600 v i d = 180 a v gs(on) = 18 v v gs(off) = - 2v inductive load v ds =600v i d = 180a v gs(on) =18v v gs(off) = - 2v inductive load recovery current : i rr [a] fig. 17 recovery characteristics vs. drain current [ t j = 150 oc ] drain current : i d [a] recovery time : t rr [ns] v ds =600v v gs(on) =18v v gs(off) = - 2v r g =8.2 w inductive load 8/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) 0 5 10 15 20 25 30 1 10 100 e off e rr e on 0 5 10 15 20 25 30 1 10 100 e off e rr e on 0 5 10 15 20 25 30 1 10 100 e off e rr e on fig. 22 switching loss vs. gate resistance [ t j = 125 oc ] switching loss [mj] gate resistance : r g [ w ] fig.23 switching loss vs. gate resistance [ t j =150oc ] switching loss [mj] gate resistance : r g [ w ] fig. 24 typical capacitance vs. drain-source voltage capasitance : c [f] drain-source voltage : v ds [v] 1.e-10 1.e-09 1.e-08 1.e-07 0.01 0.1 1 10 100 1000 t j = 25 oc v gs =0v 200 khz coss ciss crss v ds =600v i d = 180a v gs(on) =18v v gs(off) = - 2v inductive load v ds = 600 v i d = 180 a v gs(on) = 18 v v gs(off) = - 2v inductive load fig.21 switching loss vs. gate resistance [ t j =25oc ] switching loss [mj] gate resistance : r g [ w ] v ds = 600 v i d = 180 a v gs(on) = 18 v v gs(off) = - 2v inductive load 9/10 2016.02 - rev.c downloaded from: http:///
www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet BSM180D12P3C007 l electrical characteristic curves (typical) time [s] fig.26 normalized transient thermal impedance normalized transient thermal impedance : rth 0.01 0.1 1 0.001 0.01 0.1 1 10 single pulse t c = 25 oc per unit base dmos part : 0.17k/w sbd part : 0.21k/w fig. 25 gate charge characteristics [ t j = 25 oc ] gate-source voltage : v gs [v] total gate charge : qg [c] -5 0 5 10 15 20 25 0 200 400 600 800 v d =180a v ds = 600v t j =25oc 10/10 2016.02 - rev.c downloaded from: http:///
r1102 b www.rohm.com ? 2016 rohm co., ltd. all rights reserved. notice ro hm cu stome r s upport sy s tem h ttp :// www.r oh m .co m/ co n tact / thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. the information contained herein is subject to change without notice. before you use our products, pl ease contact our sales representative and verify th e la tes t specifica - tion s : alt hou gh rohm is contin uous ly wor ki ng to im pr ove p ro du ct r eli a bility and qualit y, semicon - du c tor s c an bre a k d ow n and ma lf un ct io n du e to var io us f ac to rs. th e re fore, in or der to prevent pe r so nal in ju ry or fi re ar isi ng f ro m fa ilur e, please ta ke sa f ety mea s ur es su ch as com plyin g wi th th e de r at in g ch ara ct er ist ic s, impl e menting redundant and f ir e preve nt ion designs, and u tilizin g ba ck up s a nd f ail - sa fe p ro ce du re s. ro hm shall have no responsibility for any damages arising out of the use of our poducts b ey ond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not gr ant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as ex emplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) no tes downloaded from: http:///
|
